Plasma processing apparatus and plasma processing method
In order to implement a plasma etching method for improving a tapered shape, a plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing; a first radio frequency power source that supplies radio frequency power for generating a plasma; a sample stage on which the sample is placed; a second radio frequency power source that supplies radio frequency power to the sample stage; and a control unit that controls the first radio frequency power source and the second radio frequency power source so as to etch a stacked film formed by alternately stacking a silicon oxide film and a polycrystalline silicon, or a stacked film formed by alternately stacking a silicon oxide film and a silicon nitride film, by using a plasma generated by a mixed gas of a hydrogen bromide gas, a hydrofluorocarbon gas and a nitrogen element-containing gas.
1. A plasma processing method in which a stacked film formed by alternately stacking a silicon oxide film and a polycrystalline silicon, or a stacked film formed by alternately stacking a silicon oxide film and a silicon nitride film, is etched by using a plasma, the method comprising:
etching the stacked film by using a mixed gas of a fluoromethane (CH 3 F) gas, a nitrogen element-containing gas and a chlorine gas, or a mixed gas of a fluoromethane (CH 3 F) gas, a nitrogen element-containing gas and a boron trichloride (BCl 3 ) gas,
wherein the nitrogen element-containing gas is an ammonia (NH 3 ) gas, and
wherein ammonium bromide or ammonium chloride is formed from the ammonia gas on a bottom surface of a hole or a trench of said first stacked film, or a bottom surface of a hole or a trench of said second stacked film and acts as an etchant of said first stacked film or said second stacked film, respectively.
2. The plasma processing method according to claim 1 , wherein
the etching of the stacked film is related to manufacture of a 3-D NAND flash memory.
3. The plasma processing method according to claim 1 ,
wherein a temperature of the first stacked film and the second stacked film is controlled to be a predetermined temperature at which formation of the ammonium bromide or the ammonium chloride on said bottom surface of the first stacked film or the second stacked film is promoted.
4. The plasma processing method according to claim 3 ,
wherein the predetermined temperature is 20° C. or lower.