Dry etching gas composition and dry etching method
A dry etching gas composition is used which contains a saturated or unsaturated hydrofluorocarbon compound (excluding 1,2,2,3-pentafluorocyclobutane and 1,1,2,2-tetrafluorocyclobutane) represented by a general formula (1): CxHyFz (where x, y, and z are integers that satisfy 2≤x≤4, y+z≤2x+2, and 0.5<z/y<2). Use of the etching gas composition containing the above-described hydrofluorocarbon makes it possible to selectively etch a nitrogen-containing silicon-based film (b1) with respect to a silicon oxide film, a non-silicon-based mask material, or a polycrystalline silicon film.
1. A dry etching method that uses a dry etching gas composition,
wherein the dry etching gas composition contains at least one hydrocarbon compound selected from the group consisting of 1,1,2-trifluoro-1,3-butadiene, 3,3,4,4,4-pentafluoro-1-butene, and 1,1,1-trifluoroethane,
the method comprising:
performing plasma etching, using the dry etching gas composition, on a laminated structure in which a silicon oxide film (a1), a non-silicon-based mask material (a2), or a polycrystalline silicon film (a3), and a nitrogen-containing silicon-based film (b1) are laminated, and at least a portion of the nitrogen-containing silicon-based film (b1) is capable of coming into contact with the dry etching composition, to thereby selectively etch the nitrogen-containing silicon-based film (b1) with respect to the silicon oxide film (a1), the non-silicon-based mask material (a2), or the polycrystalline silicon film (a3).
2. The dry etching method as set forth in claim 1 , wherein the nitrogen-containing silicon-based film (b1) is a silicon nitride film.
3. The dry etching method as set forth in claim 1 , wherein the non-silicon-based mask material (a2) is an amorphous carbon film, a photoresist, or a titanium nitride film.
4. The dry etching method as set forth in claim 1 , wherein the dry etching gas composition contains at least one hydrocarbon compound selected from the group consisting of 1,1,2-trifluoro-1,3-butadiene and 3,3,4,4,4-pentafluoro-1-butene.
5. The dry etching method as set forth in claim 1 , wherein the dry etching gas composition contains at least one hydrocarbon compound selected from the group consisting of 1,1,2-trifluoro-1,3-butadiene and 1,1,1-trifluoroethane.
6. The dry etching method as set forth in claim 1 , wherein the dry etching gas composition contains, in addition to the hydrofluorocarbon compound, at least one inert gas selected from the group consisting of N 2 , He, Ar, Ne, and Xe.
7. The dry etching method as set forth in claim 6 , wherein the nitrogen-containing silicon-based film (b1) is a silicon nitride film.
8. The dry etching method as set forth in claim 6 , wherein the non-silicon-based mask material (a2) is an amorphous carbon film, a photoresist, or a titanium nitride film.
9. The dry etching method as set forth in claim 1 , wherein the dry etching gas composition contains, in addition to the hydrofluorocarbon compound, at least one compound having an oxygen atom selected from the group consisting of O 2 , O 3 , CO, CO 2 , NO, NO 2 , SO 2 , and SO 3 .
10. The dry etching method as set forth in claim 9 , wherein the dry etching gas composition contains, in addition to the hydrofluorocarbon compound, at least one inert gas selected from the group consisting of N 2 , He, Ar, Ne, and Xe.
11. The dry etching method as set forth in claim 9 , wherein the nitrogen-containing silicon-based film (b1) is a silicon nitride film.
12. The dry etching method as set forth in claim 9 , wherein the non-silicon-based mask material (a2) is an amorphous carbon film, a photoresist, or a titanium nitride film.
13. The dry etching method as set forth in claim 1 , wherein the hydrofluorocarbon compound is contained in the dry etching gas composition in a ratio from 1 to 100 vol %.
14. The dry etching method as set forth in claim 13 , wherein the dry etching gas composition contains, in addition to the hydrofluorocarbon compound, at least one compound having an oxygen atom selected from the group consisting of O 2 , O 3 , CO, CO 2 , NO, NO 2 , SO 2 , and SO 3 .
15. The dry etching method as set forth in claim 13 , wherein the dry etching gas composition contains, in addition to the hydrofluorocarbon compound, at least one inert gas selected from the group consisting of N 2 , He, Ar, Ne, and Xe.
16. The dry etching method as set forth in claim 13 , wherein the nitrogen-containing silicon-based film (b1) is a silicon nitride film.
17. The dry etching method as set forth in claim 13 , wherein the non-silicon-based mask material (a2) is an amorphous carbon film, a photoresist, or a titanium nitride film.
18. A dry etching method that uses a dry etching gas composition,
wherein the dry etching gas composition contains a compound that is a linear compound and is represented by C 4 H 3 F 3 , C 4 H 3 F 5 , or C 4 H 4 F 4 , or contains 1,1,1,4,4-pentafluorobutane,
the method comprising:
performing plasma etching, using the dry etching gas composition, on a laminated structure in which a silicon oxide film (a1) and a nitrogen-containing silicon-based film (b1) are laminated, and at least a portion of the nitrogen-containing silicon-based film (b1) is capable of coming into contact with the dry etching composition, to thereby selectively etch the nitrogen-containing silicon-based film (b1) with respect to the silicon oxide film (a1).
19. The dry etching method as set forth in claim 18 , wherein the dry etching gas composition contains a compound that is a linear compound and is represented by C 4 H 3 F 3 or C 4 H 4 F 4 , or contains 1,1,1,4,4-pentafluorobutane.
20. A dry etching method that uses a dry etching gas composition, said method comprising:
performing plasma etching, using the dry etching gas composition, on a laminated structure in which a silicon oxide film (a1) and a nitrogen-containing silicon-based film (b1) are laminated, and at least a portion of the nitrogen-containing silicon-based film (b1) is capable of coming into contact with the dry etching composition, to thereby selectively etch the nitrogen-containing silicon-based film (b1) with respect to the silicon oxide film (a1), wherein the dry etching gas composition contains 21.7 to 30 vol % of 1,1,1,4,4,4-hexafluorobutane.