Charged particle beam device
A charged particle beam device includes a deflection unit that deflects a charged particle beam released from a charged particle source to irradiate a sample, a reflection plate that reflects secondary electrons generated from the sample, and a control unit that controls the deflection unit based on an image generated by detecting the secondary electrons reflected from the reflection plate. The deflection unit includes an electromagnetic deflection unit that electromagnetically scans with the charged particle beam by a magnetic field and an electrostatic deflection unit that electrostatically scans with the charged particle beam by an electric field. The control unit controls the electromagnetic deflection unit and the electrostatic deflection unit, superimposes an electromagnetic deflection vector generated by the electromagnetic scanning and an electrostatic deflection vector generated by the electrostatic scanning, and controls at least a trajectory of the charged particle beam.
1. A charged particle beam device, comprising:
a deflection unit that deflects a charged particle beam emitted from a charged particle source to irradiate a sample;
a reflection plate that reflects secondary electrons generated from the sample; and
a control unit that controls the deflection unit based on an image generated by detecting the secondary electron reflected from the reflection plate, wherein
the deflection unit includes an electromagnetic deflection unit that electromagnetically performs scanning with the charged particle beam by a magnetic field and an electrostatic deflection unit that electrostatically performs scanning with the charged particle beam by an electric field,
the control unit controls the electromagnetic deflection unit and the electrostatic deflection unit, superimposes an electromagnetic deflection vector generated by the electromagnetic scanning and an electrostatic deflection vector generated by the electrostatic scanning, and controls a trajectory of the charged particle beam,
the control unit performs control to superimpose the electromagnetic deflection vector and the electrostatic deflection vector and scan the sample with the charged particle beam from a first scanning position to a second scanning position, and
the control unit performs control so that the electrostatic deflection vector is in opposite directions in the first scanning position and the deflection vector is in the same direction in the first scanning position and the second scanning position.
2. The charged particle beam device according to claim 1 , wherein
the control unit performs control to superimpose the electrostatic deflection vector and the electromagnetic deflection vector with respect to the charged particle beam in a same direction, and performs control to superimpose the electrostatic deflection vector and the electromagnetic deflection vector with respect to the secondary electrons in opposite directions.
3. The charged particle beam device according to claim 2 , wherein
the control unit performs control so that the secondary electrons arrive at a predetermined position of the reflection plate.
4. The charged particle beam device according to claim 1 , wherein
the electromagnetic deflection unit includes a first electromagnetic deflection unit disposed on an upstream side of an irradiation direction of the charged particle beam and a second electromagnetic deflection unit disposed on a downstream side of the irradiation direction of the charged particle beam,
the electrostatic deflection unit includes a first electrostatic deflection unit disposed on the upstream side of the irradiation direction of the charged particle beam and a second electrostatic deflection unit disposed on the downstream side of the irradiation direction of the charged particle beam, and
the control unit performs control to
change the trajectory of the charged particle beam into a first direction by a first superimposed vector obtained by superimposing a first electrostatic deflection vector by the first electrostatic deflection unit and a first electromagnetic deflection vector by the first electromagnetic deflection unit, and
change the trajectory of the charged particle beam in a second direction different from the first direction by a second superimposed vector obtained by superimposing a second electrostatic deflection vector by the second electrostatic deflection unit and a second electromagnetic deflection vector by the second electromagnetic deflection unit.
5. The charged particle beam device according to claim 1 , wherein
the control unit controls trajectories of the charged particle beam and the secondary electrons by superimposing the electrostatic deflection vector and the electromagnetic deflection vector in a state where magnitude of the electrostatic deflection vector is larger than magnitude of the electromagnetic deflection vector.
6. The charged particle beam device according to claim 5 , wherein
the control unit controls the deflection unit based on the image generated based on the secondary electrons whose trajectory is controlled and corrects a deflection amount of the charged particle beam.