Die stack with reduced warpage
A microelectronic device can include a polymer, a semiconductor, and a matching layer. The polymer can include a first coefficient of thermal expansion. The semiconductor can be coupled to the polymer layer. The matching layer can be adjacent the semiconductor, and the matching layer can include a second coefficient of thermal expansion that is about the same as the first coefficient of thermal expansion.
1. A microelectronic device comprising:
a polymer layer including a first coefficient of thermal expansion;
a semiconductor, wherein the polymer layer is located on a first side of the semiconductor;
a matching layer directly coupled with the semiconductor, wherein:
the matching layer is located on a second side of the semiconductor; and
the matching layer including a second coefficient of thermal expansion that is about the same as the first coefficient of thermal expansion.
2. The microelectronic device of claim 1 , further comprising:
a signal distribution layer disposed between the polymer layer and the semiconductor.
3. The microelectronic device of claim 2 , wherein the signal distribution layer includes a third coefficient of thermal expansion, and wherein the second coefficient of thermal expansion is about the same as the third coefficient of thermal expansion.
4. The microelectronic device of claim 1 , wherein the second coefficient of thermal expansion is between 15 and 25 parts per million per Kelvin.
5. The microelectronic device of claim 1 , wherein the matching layer is comprised of one of a polyimide or an epoxy resin.
6. The microelectronic device of claim 1 , wherein the matching layer comprises a thickness of about 5 to about 10 microns.
7. The microelectronic device of claim 1 , further comprising:
an adhesive laminated to the matching layer.
8. The microelectronic device of claim 1 , wherein the microelectronic device is a NAND die.
9. A microelectronic device comprising:
a polymer layer;
a semiconductor spaced from the polymer layer, wherein the polymer layer is located on a first side of the semiconductor;
a signal distribution layer disposed between the polymer layer and the semiconductor, the signal distribution layer including a first coefficient of thermal expansion;
a matching layer directly coupled with a second side of the semiconductor, the matching layer including a second coefficient of thermal expansion that is about the same as the first coefficient of thermal expansion.
10. The microelectronic device of claim 9 , wherein the polymer layer includes a third coefficient of thermal expansion, and wherein the second coefficient of thermal expansion that is about the same as the third coefficient of thermal expansion.
11. The microelectronic device of claim 9 , wherein the second coefficient of thermal expansion is between 15 and 25 parts per million per Kelvin.
12. The microelectronic device of claim 9 , wherein the matching layer is comprised of one of a polyimide or an epoxy resin.
13. The microelectronic device of claim 9 , wherein the matching layer comprises a thickness of about 5 to about 10 microns.
14. A microelectronic device package, comprising:
a substrate including a plurality of conductive elements;
a plurality of NAND modules oriented in a stacked configuration relative to the substrate, each NAND module electrically connected to one of the plurality of conductive elements, each NAND module comprising:
a polymer layer including a first coefficient of thermal expansion;
a semiconductor;
a signal distribution layer disposed between the semiconductor and the polymer layer, the signal distribution layer including a second coefficient of thermal expansion; and
a matching layer directly coupled with a second side of the semiconductor, the matching layer including a third coefficient of thermal expansion that is about the same as one or more of the first coefficient of thermal expansion and the second coefficient of thermal expansion; and
an encapsulation layer enclosing the plurality of NAND modules.
15. The microelectronic device of claim 14 , wherein a thickness of the matching layer and the third coefficient of thermal expansion are selected as a function of the first coefficient of thermal expansion and the second coefficient of thermal expansion.
16. The microelectronic device of claim 14 , wherein the third coefficient of thermal expansion is between 15 and 25 parts per million per Kelvin.
17. The microelectronic device of claim 14 , wherein the matching layer is sprayed onto the substrate.
18. The microelectronic device of claim 14 , wherein the matching layer comprises a thickness of about 5 to about 10 microns.
19. The microelectronic device of claim 14 , further comprising:
an adhesive laminated to the matching layer.
20. A method of forming a microelectronic device, comprising:
providing a wafer comprising a polymer layer including a first coefficient of thermal expansion, a distribution layer including a second coefficient of thermal expansion, and a semiconductor, wherein the polymer layer is located on a first side of the semiconductor;
coating a second side of the semiconductor with a material having a third coefficient of thermal expansion that is about the same as one or more of the first coefficient of thermal expansion and the second coefficient of thermal expansion, wherein the material is directly coupled with the semiconductor; and
curing the material.
21. The method of claim 20 , further comprising:
laminating the material with an adhesive.
22. The method of claim 21 , further comprising:
singulating the wafer, creating a plurality of dies; and
stacking and attaching the plurality of dies from the water to each other and to a package substrate.
23. The method of claim 22 , further comprising:
bonding a conductor to each of the dies at a first end of each conductor and to the package substrate at a second end of each conductor;
encapsulating the package and attaching a ball grid array to the package substrate; and
singulating the package substrate.