Method of producing microelectronic components with a layer structure

1. A method of producing microelectronic components comprising a carrier and a microelectronic functional layer system applied to the carrier, the method comprising:

forming a functional layer system on a front side of a growth substrate;

applying the carrier to the functional layer system for constitution of a workpiece formed of a layered composite comprised of the carrier, the functional layer system and the growth substrate;

attaching the workpiece to a workpiece carrier such that a reverse side of the growth substrate arranged opposite a front side is accessible;

utilizing incident radiation of a laser beam from the reverse side of the growth substrate through said growth substrate such that the laser beam is focused in a boundary region between the growth substrate and the functional layer system, and a bond between the growth substrate and the functional layer system in the boundary region is weakened or destroyed;

separating a functional layer stack comprised of the carrier and the functional layer system from the growth substrate,

wherein

for separation of the functional layer stack from the growth substrate, a vacuum gripper comprising a raised edge that defines a sealing zone and circumferentially encloses an area including a recess is applied to the reverse side of the growth substrate, and the vacuum gripper is in contact with the growth substrate along the raised edge and not in contact with the substrate in the area including the recess,

a negative pressure is generated in area including the recess such that, by introduction of a separating force to the growth substrate, separation of the functional layer stack from the growth substrate is initiated in the area including the recess; and

the growth substrate held on the vacuum gripper is removed from the functional layer stack that is held on the workpiece carrier.

2. The method as claimed in claim 1 , wherein the workpiece carrier is configured as a vacuum tensioning device having a sealing zone that circumferentially encloses an inner region, and the workpiece is applied to the workpiece carrier such that contact with the workpiece carrier is only established in a region of the sealing zone and a negative pressure is then generated in the inner region.

3. The method as claimed in claim 1 , further comprising measuring a surface profile of the workpiece held by the workpiece carrier prior to irradiation and/or during irradiation by the laser beam to record shape data, and by focus control of the laser beam during irradiation in accordance with the shape data, wherein the measuring is executed by a contactless method or a white light interferometry or laser triangulation.

4. The method as claimed in claim 1 , wherein, prior to irradiation by the laser beam, a fluid layer comprising a fluid transparent to laser radiation is brought into contact with the reverse side of the growth substrate, and in that irradiation by the laser beam is executed through the fluid layer, and the fluid layer is applied to the reverse side of the growth substrate by spin coating or spraying.

5. The method as claimed in claim 1 , wherein an incident laser beam with a line profile is employed, and a transverse relative movement is executed between the laser beam and the workpiece, perpendicularly to a longitudinal axis of the line profile.

6. The method as claimed in claim 1 , wherein the incident radiation is oriented obliquely to the reverse side of the growth substrate.

7. The method as claimed in claim 1 , wherein the workpiece secured to the workpiece carrier is heated to a temperature exceeding ambient temperature, and the temperature is at least 50° C. and/or is limited to a maximum of 150° C.

8. The method as claimed in claim 7 , wherein the workpiece is heated by a heating device integrated in the workpiece carrier, and heat-up is executed in a contactless arrangement by thermal radiation and/or convection.

9. The method as claimed in claim 6 , wherein an angle between a surface normal of the reverse side and a direction of incidence is 5° to 10°.