Cleaning solution composition
Provided is a cleaning solution composition which, when cleaning the surface of a semiconductor substrate or glass substrate, does not damage SiO 2 , Si 3 N 4 , Si, and the like forming a layer on the substrate surface, can be used under processing conditions applicable to a brush scrub cleaning chamber equipped with a CMP apparatus, and can efficiently remove compounds derived from abrasive particles in a slurry. This cleaning solution composition for cleaning the surface of a semiconductor substrate or glass substrate contains: one or two or more fluorine atom-containing inorganic acids or salts thereof; water; one or two or more reducing agents; and one or two or more anionic surfactants, and has a hydrogen ion concentration (pH) of less than 7.
1. A cleaning solution composition for cleaning a semiconductor substrate or glass substrate surface, comprising one or more inorganic acids that contain fluorine atoms within their structure or salts thereof, water, one or more reducing agent, and one or more anionic surfactants, and having hydrogen ion concentration (pH) of less than 7, wherein no hydrofluoric acid is contained as the inorganic acid that contains fluorine atoms within its structure.
2. The cleaning solution composition of claim 1 , wherein the inorganic acid that contains fluorine atoms within its structure is hexafluorosilicic acid or hexafluoroboric acid, or combinations thereof.
3. The cleaning solution composition of claim 1 , wherein the salt of the inorganic acid that contains fluorine atoms is an ammonium salt, amine salt or quaternary ammonium salt or combination thereof.
4. The cleaning solution composition of claim 1 , wherein the reducing agent is selected from a group consisting of five- or six-membered cyclic compounds having two or more hydroxyl groups.
5. The cleaning solution composition of claim 4 , wherein five- or six-membered cyclic compound having two or more hydroxyl groups is ascorbic acid, catechol, resorcinol, hydroquinone, pyrogallol or methylcatechol.
6. The cleaning solution composition of claim 1 , wherein anionic surfactant is a condensate of naphthalenesulfonic acid and formaldehyde or a salt thereof.
7. The cleaning solution composition of claim 1 for cleaning residual cerium compound on a semiconductor substrate or glass substrate surface after performing chemical machine polishing (CMP) of the semiconductor substrate or glass substrate surface using slurry containing a cerium compound as abrasive grain.
8. A stock solution composition for the cleaning solution composition of claim 1 for use in producing the cleaning solution composition by being diluted by from 10-fold to 1000-fold.
9. A method of manufacturing an electronic device comprising steps of performing chemical machine polishing (CMP) of a semiconductor substrate or glass substrate surface using slurry containing a cerium compound as abrasive grain, and then cleaning residual cerium compound on the semiconductor substrate or glass substrate surface using the cleaning solution composition of claim 1 .