Composition for surface treatment and surface treatment method using the same
A composition for surface treatment includes fluorosilicic acid (H 2 SiF 6 ) and hydrofluoric acid (HF), and/or a surface treatment method using the same. The composition may be used to treat (e.g., etch) a substrate such as glass or the like.
1 . A composition for surface treatment of a substrate, the composition comprising:
from about 30-50 wt. % fluorosilicic acid (H 2 SiF 6 );
inorganic acid other than hydrofluoric acid; and
hydrofluoric acid (HF), wherein a value calculated by Equation 1 below is 0.80 or more:
Si hydro /Si total [Equation 1]
where in Equation 1, Si total is a total content (ppm) of silicon (Si) in the composition, and
Si hydro is a content (ppm) of the silicon (Si) derived from the fluorosilicic acid;
wherein a content of the inorganic acid in the composition is 1 wt % or less with respect to the total composition.
2 . The composition of claim 1 , wherein Si hydro is calculated by Equation 2 below:
Si hydro ={Content of fluorosilicic acid in the composition(%)}*Si atomic weight/molecular weight of fluorosilicic acid(H 2 SiF 6 ) [Equation 2]
3 . The composition of claim 1 , wherein the content of hydrofluoric acid (HF) is from about 0.1 wt % to 1 wt % with respect to the total composition.
4 . The composition of claim 1 , wherein the inorganic acid includes a first inorganic acid including sulfuric acid.
5 . The composition of claim 1 , wherein the inorganic acid includes a second inorganic acid selected from the group consisting of nitric acid, hydrochloric acid, and phosphoric acid.
6 . The composition of claim 1 , wherein a pH of the composition is from 2 to 6.5.
7 . A method for surface treatment, the method comprising contacting the composition for surface treatment of claim 1 with a substrate.
8 . The method of claim 7 , wherein the substrate includes glass.
9 . The method of claim 7 , wherein a physical thickness of the substrate is 20 μm or more and 300 μm or less.
10 . The method of claim 7 , further comprising etching the substrate.
11 . The method of claim 10 , wherein an etch rate represented by Equation 3 below in etching the substrate is 0.1 μm/min to 1 μm/min:
etch rate=(etched depth of substrate etched in etching direction)/(etch time) [Equation 3]
wherein in Equation 3, a depth of the substrate etched in an etching direction is a difference between a thickness of the substrate before etching and a thickness of the substrate after etching.
12 . The method of claim 10 , wherein an etch rate deviation represented by Equation 4 below in etching the substrate is 5% or less:
etch rate deviation={(early etch rate−late etch rate)/(early etch rate)}/(early etch rate)*100(%) [Equation 4]
wherein in Equation 4 above, the early etch rate is the etch rate, 10 minutes after the substrate etching starts, and the late etch rate is the etch rate, 120 minutes after the substrate etching starts.