Method of producing a glass substrate for a mask blank and method of producing a mask blank
A method of producing a glass substrate for a mask blank has the steps of measuring a convex/concave profile of a surface of the glass substrate, controlling a flatness of the surface of the glass substrate to a value not greater than a predetermined reference value by specifying the degree of convexity of a convex portion present on the surface of the glass substrate with reference to a result of measurement obtained in the profile measuring step and executing local machining upon the convex portion under a machining condition depending upon the degree of convexity, and polishing, after the flatness control step, the surface of the glass substrate subjected to the local machining. The surface of the glass substrate subjected to the local machining is subjected to acid treatment after the flatness control step and before the polishing step.
1. A method of producing a glass substrate for an EUV (extreme ultra violet) mask blank, the method comprising:
a preparing step of preparing the glass substrate having a surface subjected to precision polishing;
a profile measuring step of measuring, after the preparing step, a convex/concave profile of the surface of the glass substrate;
a flatness control step of controlling a flatness of the surface of the glass substrate to a value not greater than a reference value determined depending upon a required flatness required to the glass substrate by specifying the degree of convexity of a convex portion present on the surface of the glass substrate with reference to a result of measurement obtained in the profile measuring step and executing local machining upon the convex portion under a machining condition depending upon the degree of convexity, the local machining being carried out by plasma etching or a gas cluster ion beam;
an acid treatment step of subjecting, after the flatness control step, the surface of the glass substrate to acid treatment under a condition that machining scraps of the glass substrate, a reaction product, and a machining-affected layer produced by the local machining and left on the surface of the glass substrate are removed while maintaining the flatness and a surface roughness of the glass substrate; and
a polishing step of polishing, after the acid treatment step, the surface of the glass substrate;
said method thereby making the surface of the glass substrate have a flatness and a surface roughness required of the glass substrate for producing the EUV mask blank.
2. A method of producing a glass substrate for an EUV (extreme ultra violet) mask blank, the method comprising:
a preparing step of preparing the glass substrate having a surface subjected to precision polishing;
a profile measuring step of measuring, after the preparing step, a convex/concave profile of the surface of the glass substrate;
a flatness control step of controlling a flatness of the surface of the glass substrate to a value not greater than a reference value determined depending upon a required flatness required to the glass substrate by specifying the degree of convexity of a convex portion present on the surface of the glass substrate with reference to a result of measurement obtained in the profile measuring step and executing local machining upon the convex portion under a machining condition depending upon the degree of convexity, the local machining being carried out by plasma etching or a gas cluster ion beam;
an alkali treatment step of subjecting, after the flatness control step, the surface of the glass substrate to alkali treatment under a condition that machining scraps of the glass substrate, a reaction product, and a machining-affected layer produced by the local machining and left on the surface of the glass substrate are removed while maintaining the flatness and a surface roughness of the glass substrate; and
a polishing step of polishing, after the alkali treatment step, the surface of the glass substrate;
said method thereby making the surface of the glass substrate have a flatness and a surface roughness required of the glass substrate for producing the EUV mask blank.
3. A method according to claim 1 , wherein an acid used in the acid treatment is fluorosilic acid and/or hydrofluoric acid.
4. A method according to claim 1 , wherein an acid used in the acid treatment is sulfuric acid.
5. A method according to claim 1 , wherein the surface of the glass substrate subjected to the acid treatment is subjected to alkali treatment after the acid treatment.
6. A method according to claim 1 , wherein the reference value is not greater than 0.05 μm.
7. A method of producing a mask blank, the method comprising the steps of preparing the glass substrate obtained by the method according to claim 1 , and forming a thin film as a transferred pattern on the glass substrate.
8. A method of producing a transfer mask, the method comprising the steps of preparing the mask blank obtained by the method according to claim 7 and patterning the thin film of the mask blank to form a thin film pattern on the glass substrate.
9. A method of producing a semiconductor device, the method comprising the steps of preparing the transfer mask obtained by the method according to claim 8 and transferring the thin film pattern of the transfer mask onto a semiconductor substrate by lithography.
10. A method according to claim 2 , wherein the reference value is not greater than 0.05 μm.
11. A method of producing a mask blank, the method comprising the steps of preparing the glass substrate obtained by the method according to claim 2 , and forming a thin film as a transferred pattern on the glass substrate.
12. A method of producing a transfer mask, the method comprising the steps of preparing the mask blank obtained by the method according to claim 11 and patterning the thin film of the mask blank to form a thin film pattern on the glass substrate.
13. A method of producing a semiconductor device, the method comprising the steps of preparing the transfer mask obtained by the method according to claim 12 and transferring the thin film pattern of the transfer mask onto a semiconductor substrate by lithography.
14. A method according to claim 1 , wherein said flatness control step, said alkali treatment step, and said polishing step are carried out in this order to thereby make the surface of the glass substrate have a surface roughness Ra of 0.2 nm or less, where the surface roughness Ra is representative of a center-line-mean roughness.
15. A method according to claim 2 , wherein said flatness control step, said alkali treatment step, and said polishing step are carried out in this order to thereby make the surface of the glass substrate have a surface roughness Ra of 0.2 nm or less, where the surface roughness Ra is representative of a center-line-mean roughness.
16. A method according to claim 1 , wherein said glass substrate makes use of a SiO 2 —TiO 2 glass.
17. A method according to claim 16 , wherein concentration of acid used in the acid treatment is 0.05-10 vol %.
18. A method according to claim 2 , wherein said glass substrate makes use of a SiO 2 —TiO 2 glass.
19. A method according to claim 18 , wherein concentration of alkali used in the alkali treatment is 0.5-10 vol %.