Formulation for the etching of polymer materials prior to coating of the materials
A new formulation of treatment baths for the etching of polymers prior to metallization or coating of the polymer using known technologies described in the state of the art, which are based on the use of salts and/or complexes of the Cr(III) cation, where the formulation includes a salt and/or Cr(III) complex in which the Cr(III) is coordinated to at least one or several mono, bi, tri, tetra, penta, hexadentate or bridging ligands that are coordinated to the chromium by the oxygen, sulfur or nitrogen atom or several of these atoms of the ligands, such that after the polymer piece has been etched with the Etching formulation described above, the metal coating is carried out by means of the application of chemical and electrolyte baths in the case of metallization, or by means of the application of paint or another organic coating.
1. An acid etching bath formulation comprising an acid and Cr(III) coordination complexes, wherein the acid concentration in the etching bath is from 65 wt. % to 98 wt. %,
wherein the Cr (III) coordination complexes comprise one or more ligands selected from mono, bi, tri, tetra, penta, hexadentate and bridging ligands that are coordinated to the chromium by an oxygen, sulfur or nitrogen atom or a combination thereof,
wherein the acid in the etching bath is selected from sulfuric acid, aminosulfuric (sulfamic) acid, phosphoric acid, diphosphoric acid, metaphosphoric acid, polyphosphoric acid, methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, benzenesulfonic acid, toluenesulfonic acid, cumenesulfonic acid, alkylbenzenesulfonic acids, monoalkylphosphoric acids, dialkylphosphoric acids, isethionic acid, perchloric acid, chloric acid, nitric acid, trifluoromethanesulfonic acid, trifluoroacetic acid, tetrafluoroboric acid, hexafluorophosphoric acid, hexafluorosilicic acid, hydrofluoric acid, boric acid or mixtures thereof.
2. The formulation according to claim 1 , wherein the ligands are selected from formate, acetate, propanoate, butanoate, benzoate, phenylacetate, phenylpropionate, cyanamate, alkylbenzoates, pyruvate, levulinate, citrate, isocitrate, aconitate, trimellitate, glycinate, valinate, leucinate, threoninate, lysinate, tryptophanate, histidinate, phenylalaninate, isoleucinate, argininate, methioninate, alaninate, prolinate, serinate, cysteinate, asparaginate, glutaminate, tyrosinate, aspartate, polyaspartate, glutamate, cysteinate, homocysteinate, ornithinate, nicotinate, oxalate, propanedioate, butanedioate, pentanedioate, hexanedioate, maleate, fumarate, phthalate, isophthalate, terephthalate, tartrate, itaconate, mesaconate, citraconate, glycolate, lactate, mandelate, salicylate, gluconate, ethylenediaminetetraacetate, nitrilotriacetate, iminodisuccinate, ethylenediaminedisuccinate, methylglycine diacetate, N,N,diacetate glutamate, cyclohexylenedinitrilotetraacetate, diethylenetriaminepentaacetate, aminoethyl ethylene glycol tetraacetate, triethylenetetramine hexaacetate, dihydroxyethylglycinate, iminodiacetate, oxamate, nitrilotripropionate, ethylenediamine dipropionate, thiodipropionate, dithiodipropionate, aminopropanoate, aminopentanoate, aminohexanoate, 2-aminobenzoate, 3-aminobenzoate, 4-aminobenzoate, 3-cyclohexylamino-propylamine, ethylenediamine, 1,3-diaminopropane, dimethylaminopropylamine, diethylaminopropylamine, bis(3-aminopropyl)-methylamine, diethylenetriamine, dipropylenetriamine, triethylenetetramine, tetraethylenepentamine, polyamines, 3-2-aminoethyl)amino-propylamine, N,N′-bis(3-aminopropyl)ethylenediamine, neopentanediamine, cyclohexanediamine, hexane-1,6-diamine, imidazole, 1-methylimidazole, 2-methylimidazole, 1,2-dimethylimidazole, 2-ethylimidazole, 2-ethyl-4-methyl-imidazole, N-(3-Aminopropyl)-imidazole, pyrazole, niacinamide, bipyridine, and phenanthroline.
3. The formulation according to claim 1 , wherein the ligands are selected from formate, acetate, propionate, glycinate, argininate, aspartate, polyaspartate, glutamate, nicotinate, oxalate, propanedioate, butanedioate, pentanedioate, hexanedioate, maleate, fumarate, phthalate, salicylate, tartrate, citrate, glycolate, lactate, gluconate, ethylenediaminetetraacetate, nitrilotriacetate, and 2-aminobenzoate.
4. The formulation according to claim 1 , wherein the ligands are selected from oxalate, propanedionate, butanedionate, maleate, fumarate, phthalate, glycolate, lactate, salicylate, glycinate, glutamate, or mixtures thereof.
5. The formulation according to claim 1 , wherein the concentration of the Cr(III) complex is in the range of 2 mM and 2 M.
6. The formulation according to claim 1 , wherein the concentration of the Cr(III) complex is between 5 mM and 1 M.
7. The formulation according to claim 1 , wherein the concentration of the Cr(III) complex is between 0.01 M and 0.4 M.
8. The formulation according to claim 1 , wherein the acid in the etching bath is selected from sulfuric acid, phosphoric acid, methanesulfonic acid, diphosphoric acid, metaphosphoric acid, polyphosphoric acid, or mixtures thereof.
9. The formulation according to claim 1 , wherein the acid in the etching bath is selected from sulfuric acid, phosphoric acid, diphosphoric acid, metaphosphoric acid, polyphosphoric acids, methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, benzenesulfonic acid, toluenesulfonic acid, cumenesulfonic acid, alkylbenzenesulfonic acids, monoalkylphosphoric acids, dialkylphosphoric acids or mixtures thereof.
10. The formulation according to claim 1 , wherein the acid in the etching bath is selected from sulfuric acid, phosphoric acid, or mixtures thereof.
11. The formulation according to claim 1 , wherein the percentage by weight of acids is comprised between 65% and 95%.
12. The formulation according to claim 1 , wherein the percentage by weight of acids is comprised between 65% and 92%.