Substrate alignment systems and related methods
Implementations of a method of making a plurality of alignment marks on a wafer may include: providing a wafer including an alignment feature on a first side of the wafer. The method may include aligning the wafer using a camera focused on the first side of the wafer. The wafer may be aligned using the alignment feature on the first side of the die. The wafer may also include creating a plurality of alignment marks on a second side of the wafer through lasering, sawing, or scribing.
1. A method for making a plurality of alignment marks on a wafer, the method comprising:
providing a wafer comprising an alignment feature on a first side of the wafer the wafer comprising a thickness of 50 microns or less and a metal layer comprised on a second side of the wafer, the metal layer comprising a thickness of 10 microns or less;
aligning the wafer using an alignment tool focused on the first side of the wafer using the alignment feature; and
creating a plurality of alignment marks in the metal layer through one of lasering, sawing, or scribing;
wherein the plurality of alignment marks extend only partially into the thickness of the metal layer.
2. The method of claim 1 , wherein scribing further comprises using a scribe tool or a stylus.
3. The method of claim 1 , further comprising:
forming a groove in the thickness of the metal layer coupled to the second side of the wafer using one of lasering, sawing or scribing; and
singulating the wafer using one of lasering or sawing.
4. The method of claim 3 , wherein the metal layer comprises a thickness of 1 micron in the plurality of alignment marks after grooving.
5. The method of claim 3 , wherein grooving comprises using a laser and singulating comprises using the laser.
6. The method of claim 3 , wherein grooving comprises using a laser and singulating comprises using a saw.
7. The method of claim 3 , wherein the groove is formed only partially through the thickness of the metal layer.
8. The method of claim 1 , wherein the alignment tool is one of an infrared camera or a visible light camera.
9. A method for making a plurality of alignment marks on a wafer, the method comprising:
providing a wafer comprising an alignment feature, the alignment feature in a die street on a first side of the wafer between a plurality of active areas on a first side of the wafer and a metal layer on a second side of the wafer, the metal layer having a first thickness of 10 microns or less;
aligning the wafer using a camera and a plurality of alignment features;
creating a plurality of alignment marks in the metal layer through one of lasering, sawing, or scribing; and
thinning the first thickness of the metal layer to a second thickness in the alignment mark;
wherein a thickness of the wafer is 50 microns or less.
10. The method of claim 9 , singulating the wafer into a plurality of die with one of a laser, a saw, or a cutting tool.
11. The method of claim 9 , wherein the metal layer comprises copper.
12. The method of claim 9 , wherein scribing further comprises using a scribe tool or a stylus.
13. The method of claim 12 , wherein the second thickness is 1 micron in the plurality of alignment marks after thinning.
14. The method of claim 9 , wherein the camera is an infrared camera or a visible light camera.
15. A method for making a plurality of alignment marks on a wafer, the method comprising:
providing a wafer comprising a first side and a second side, wherein the first side comprises a plurality of die and one or more die streets between each of the plurality of die and the second side comprises a metal layer having a thickness of 10 microns or less;
aligning the wafer using a plurality of alignment features in two or more of the one or more die streets with an alignment camera;
creating one or more alignment marks in the metal layer through lasering, sawing, or scribing, wherein the one or more alignment marks correspond with the one or more of the plurality of alignment features;
grooving the one or more alignment marks with one of lasering, sawing or scribing; and
singulating the plurality of die by cutting the wafer with one of lasering, sawing or scribing;
wherein a thickness of the wafer is 50 microns or less.
16. The method of claim 15 , wherein the metal layer is copper.
17. The method of claim 15 , wherein the metal layer comprises a second thickness of 1 micron in a groove.
18. The method of claim 15 , wherein scribing further comprises one of using a scribe tool or a stylus.
19. The method of claim 15 , wherein the one or more alignment marks extend only partially into the thickness of the metal layer.