Method of manufacturing a semiconductor device and semiconductor device

1. A method of manufacturing a semiconductor device, comprising:

preparing a layout comprising active region patterns, each of the active region patterns corresponding to one or two fin structures, first fin cut patterns and second fin cut patterns, wherein at least one pattern selected from the group consisting of the first fin cut patterns and the second fin cut patterns has a non-rectangular shape;

modifying the layout by adding one or more dummy active region patterns and by changing the at least one pattern to be a rectangular pattern;

forming base fin structures according to a modified layout including the active region patterns and the dummy active region patterns; and

removing part of the base fin structures according to one of a modified layout of the first fin cut patterns and a modified layout of the second fin cut patterns in which the at least one pattern has been changed to be the rectangular pattern.

2. The method of claim 1 , wherein:

the first fin cut patterns includes the at last one pattern, and further include patterns having a non-rectangular shape, and

the method comprises changing all patterns having a non-rectangular shape of the first fin cut patterns to a rectangular shape.

3. The method of claim 2 , wherein the second mask patterns include no non-rectangular pattern.

4. The method of claim 2 , further comprising:

generating a mandrel pattern based on the active region pattern and dummy active region pattern,

wherein the base fin structures includes a pair of ring shaped fin structures corresponding to a periphery of the mandrel pattern.

5. The method of claim 4 , wherein:

each of the pair of ring shaped fin structures has a longer side extending in a first direction and a shorter side extending in a second direction crossing the first direction, and

in the removing part of the base fin structures, an etching mask pattern corresponding to the first mask patterns is used to remove part of the longer side of the pair of ring shaped fin structures.

6. The method of claim 5 , wherein no part of the shorter sides of the pair of ring shaped fin structures is removed by the etching mask pattern corresponding to the first mask patterns.

7. The method of claim 5 , further comprising cutting part of the base fin structures according to the second fin cut patterns.

8. The method of claim 7 , wherein in the cutting the part of the base fin structures, an etching mask pattern corresponding to the second mask patterns is used to remove part of the shorter side of the pair of ring shaped fin structures.

9. The method of claim 8 , wherein corners of the pair of ring shaped fin structures are removed by using the etching mask pattern corresponding to the second mask patterns.

10. The method of claim 5 , wherein a part of one of the pair of fin structures is removed by using the etching mask pattern corresponding to the first mask patterns.

11. A method of manufacturing a semiconductor device, comprising:

preparing a layout comprising active region patterns, each of the active region patterns corresponding to one or two fin structures, first fin cut patterns, second fin cut patterns and fin-end gate cut patterns, wherein at least one pattern of the first fin cut patterns has a non-rectangular shape;

modifying the layout by adding one or more dummy active region patterns, by changing the at least one pattern to be a rectangular pattern and by adding one or more additional fin-end gate cut patterns;

forming base fin structures according to a modified layout including the active region patterns and the dummy active region patterns;

removing part of the base fin structures according to a modified layout of the first fin cut patterns, in which the at least one pattern has been changed to be the rectangular pattern, thereby forming fin structures;

forming dummy gate structures; and

removing part of the dummy gate structures and the fin structures using an etching mask corresponding to a modified layout including the fin-end gate cut patterns and the additional fin-end gate cut patterns, thereby forming one or more grooves.

12. The method of claim 11 , wherein the additional fin-end gate cut patterns correspond to longitudinal edges of the second fin cut patterns.

13. The method of claim 12 , wherein after the additional fin-end gate cut patterns are generated, the second fin cut patterns are removed from the layout.

14. The method of claim 11 , wherein each of the dummy active region patterns are directly adjacent to two additional fin-end gate cut patterns or one additional fin-end gate cut pattern and one fin-end gate cut pattern.

15. The method of claim 11 , further comprising filling the one or more grooves with one or more dielectric materials.

16. The method of claim 11 , wherein:

the layout further comprises a mandrel pattern generated based on the active region pattern and dummy active region pattern, and

the base fin structures includes a pair of ring shaped fin structures corresponding to a periphery of the mandrel pattern.

17. The method of claim 16 , wherein:

each of the pair of ring shaped fin structures has a longer side extending in a first direction and a shorter side extending in a second direction crossing the first direction, and

in the removing part of the base fin structures, an etching mask pattern corresponding to the first mask patterns is used to remove part of the longer side of the pair of ring shaped fin structures.

18. The method of claim 17 , wherein no part of the shorter sides of the pair of ring shaped fin structures is removed by the etching mask pattern corresponding to the first mask patterns.

19. The method of claim 17 , wherein the shorter sides of the pair of ring shaped fin structures are removed by the etching mask pattern corresponding to the first mask patterns.

20. A method of manufacturing a semiconductor device, comprising:

preparing a layout comprising active region patterns, each of the active region patterns corresponding to one or two fin structures, first fin cut patterns and second fin cut patterns, wherein at least one pattern selected from the group consisting of the first fin cut patterns and the second fin cut patterns has a non-rectangular shape;

modifying the layout by adding one or more dummy active region patterns and by changing the at least one pattern to be a rectangular pattern;

preparing photo masks based on the modified layout;

forming base fin structures using at least one of the photo masks, which correspond to the active region patterns and the dummy active region patterns; and

removing part of the base fin structures using at least one of the photo masks, which corresponds to the first fin cut patterns and the second fin cut patterns in which the at least one pattern has been changed to be the rectangular pattern.