Cleaning composition with corrosion inhibitor
A cleaning composition and process for cleaning an in-process microelectronic device substrate, e.g., by post-chemical mechanical polishing (CMP) cleaning, to remove residue from a surface thereof, wherein the cleaning composition may be especially effective for cleaning a substrate surface that includes exposed metal such as cobalt, copper, or both, along with dielectric or low k dielectric material, and wherein the cleaning composition includes corrosion inhibitor to inhibit corrosion of the exposed metal.
1. A cleaning composition effective to clean a microelectronic device substrate, the cleaning composition comprising:
water,
base to provide a pH of at least 8,
a cleaning compound, and
a corrosion inhibitor selected from:
a guanidine functional compound selected from dicyandiamide, guanylurea, a guanidine salt, and glycocyamine,
2-methyl-3-butyn-2-ol,
a pyrazolone functional compound selected from 3-methyl-2-pyrazolin-5-one, 3-methyl-1-(4-sulfophenyl)-2-pyrazolin-5-one, and 3-methyl-1-p-tolyl-5-pyrazolone, and
a hydroxyquinoline compound selected from 8-hydroxyquinoline-2-carboxylic acid, 5-chloro-7-iodo-quinolin-8-ol, 5,7-dichloro-2-((dimethylamino)methyl)quinolin-8-ol, 8-hydroxyquinoline-4-carbaldehyde, 8-hydroxyquinoline-4-carbaldehyde-oxime, and 8-hydroxyquinoline-5-sulfonic acid monohydrate.
2. A cleaning composition of claim 1 , wherein the corrosion inhibitor is selected from dicyandiamide and 2-methyl-3-butyn-2-ol.
3. A cleaning composition of claim 1 , wherein the base is selected from: choline hydroxide, tetraethylammonium hydroxide, tetramethylammonium hydroxide, a quaternary ammonium compound, and a combination thereof.
4. A cleaning composition of claim 1 , wherein the cleaning compound is an alkanol amine.
5. A cleaning composition of claim 1 , wherein the corrosion inhibitor is dicyandiamide, guanylurea sulfate, or, glycocyamine.
6. A cleaning composition of claim 1 , wherein the corrosion inhibitor is dicyandiamide.
7. A cleaning composition of claim 1 , wherein the corrosion inhibitor is 3-methyl-2-pyrazolin-5-one, 3-methyl-1-(4-sulfophenyl)-2-pyrazolin-5-one, or 3-methyl-1-p-tolyl-5-pyrazolone.
8. A cleaning composition of claim 1 , wherein the corrosion inhibitor is 2-methyl-3-butyn-2-ol.
9. A cleaning composition of claim 1 , wherein the corrosion inhibitor is selected from 8-hydroxyquinoline-2-carboxylic acid, 5-chloro-7-iodo-quinolin-8-ol, 5,7-dichloro-2-((dimethylamino)methyl)quinolin-8-ol, 8-hydroxyquinoline-4-carbaldehyde, 8-hydroxyquinoline-4-carbaldehyde-oxime, 8-hydroxyquinoline-5-sulfonic acid monohydrate.
10. A cleaning composition of claim 1 , wherein the cleaning composition is a concentrate that contains less than 80 weight percent water.
11. A cleaning composition of claim 1 , wherein the cleaning composition is a use composition that contains at least 10 weight percent water.
12. A cleaning composition of claim 1 , further comprising a secondary cleaning compound selected from morpholine, L-cysteine, hydroxyl ethyl cellulose, polyvinylpyrrolidone, a polyamine, a glycol ether, and combinations thereof.
13. A cleaning composition of claim 1 , further comprising a secondary corrosion inhibitor selected from oxalic acid, succinic acid, L-tartaric acid, and combinations thereof.
14. A cleaning composition of claim 1 , further comprising one or more of chelating agent, oxidizer, surfactant, oxygen scavenger, solvent, polymer and buffer.
15. A method of cleaning a microelectronic device substrate, the method comprising:
providing cleaning composition
providing a microelectronic device substrate, and
contacting a surface of the microelectronic device substrate with the cleaning composition, wherein the cleaning composition comprises:
water,
base to provide a pH of at least 8,
a cleaning compound, and
a corrosion inhibitor selected from:
a guanidine functional compound selected from dicyandiamide, guanylurea, a guanidine salt, and glycocyamine,
2-methyl-3-butyn-2-ol,
a pyrazolone functional compound selected from 3-methyl-2-pyrazolin-5-one, 3-methyl-1-(4-sulfophenyl)-2-pyrazolin-5-one, and 3-methyl-1-p-tolyl-5-pyrazolone, and
a hydroxyquinoline compound selected from 8-hydroxyquinoline-2-carboxylic acid, 5-chloro-7-iodo-quinolin-8-ol, 5,7-dichloro-2-((dimethylamino)methyl)quinolin-8-ol, 8-hydroxyquinoline-4-carbaldehyde, 8-hydroxyquinoline-4-carbaldehyde-oxime, and 8-hydroxyquinoline-5-sulfonic acid monohydrate.
16. A method of claim 15 wherein the surface of the substrate includes residue, and the method is effective to remove at least 70 percent of the residue.
17. A method of claim 15 wherein the residue is selected from a post-CMP residue, a post-etch residue, and a post-ash residue.
18. A method of claim 15 wherein the surface includes exposed metal selected from: cobalt, copper, and both cobalt and copper.
19. A cleaning composition of claim 1 further comprising
a complexing agent.