Photoresist, developer, and method of forming photoresist pattern

1. A photoresist composition, comprising:

a polymer resin;

a photoactive compound;

an organometallic compound;

an enhancement additive; and

a first solvent,

wherein the organometallic compound comprises a metal oxide nanoparticle and one or more organic ligands,

wherein the enhancement additive is an ionic surfactant, or a non-ionic surfactant, or a second solvent having a boiling point of greater than 150° C.,

wherein the ionic surfactant is one or more selected from:

wherein R is a substituted or unsubstituted C1-C12 alkyl, C1-C12 aryl, or C1-C12 aralkyl,

wherein the non-ionic surfactant is one or more selected from:

wherein R, R 1 , and R 2 are the same or different and are a substituted or unsubstituted C1-C25 alkyl, C1-C25 aryl, or C1-C25 aralkyl, and EO/PO is ethylene oxide, propylene oxide, or a copolymer of ethylene oxide and propylene oxide, and

wherein the second solvent having a boiling point of greater than 150° C. is one or more selected from:

cyclohexyl acetate, dipropylene glycol dimethyl ether, propylene glycol diacetate, dipropylene glycol methyl propylene ether, di(propylene glycol) methyl ether acetate, 1,4-diacetoxybutane, 1,3-butanediol diacetate, 1,6-diacetoxyhexane, tripropylene glycol methyl ether, 1,3-propanediol, propylene glycol, 1,3-butanediol, propylene glycol butyl ether, dipropylene glycol monomethyl ether, diethylene glycol monoethyl ether, di(propylene glycol) butyl ether, tri(propylene glycol) butyl ether,

2. The photoresist composition of claim 1 , wherein a concentration of the second solvent having a boiling point of greater than 150° C. is 3 wt. % to 100 wt. % of the total weight of the second solvent and the first solvent.

3. The photoresist composition of claim 1 , wherein a concentration of the ionic surfactant or non-ionic surfactant is 10 ppm to 1,000 ppm based on the total weight of the ionic surfactant or non-ionic surfactant and the first solvent.

4. The photoresist composition of claim 1 , wherein the first solvent is one or more selected from propylene glycol methyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), 1-ethoxy-2-propanol (PGEE), γ-butyrolactone (GBL), cyclohexanone (CHN), ethyl lactate (EL), methanol, ethanol, propanol, n-butanol, acetone, dimethylformamide (DMF), isopropanol (IPA), tetrahydrofuran (THF), methyl isobutyl carbinol (MIBC), n-butyl acetate (nBA), and 2-heptanone (MAK).

5. The photoresist composition of claim 1 , further comprising water at a concentration of 10 ppm to 250 ppm based on the total composition of the water, enhancement additive, and first solvent.

6. The photoresist composition of claim 1 , wherein the one or more organic ligands are selected from the group consisting of a carboxylic acid, a sulfonic acid ligand, a methacrylic acid, and ligands including aliphatic or aromatic groups.

7. A photoresist developer composition, comprising:

an enhancement additive;

an organometallic compound; and

a first solvent,

wherein the organometallic compound comprises a metal oxide nanoparticle and one or more organic ligands,

wherein the enhancement additive is an ionic surfactant, or a non-ionic surfactant, or a second solvent having a boiling point of greater than 150° C.,

wherein the ionic surfactant is one or more selected from:

wherein R is a substituted or unsubstituted C1-C12 alkyl, C1-C12 aryl, or C1-C12 aralkyl,

wherein the non-ionic surfactant is one or more selected from:

wherein R, R 1 , and R 2 are the same or different and are a substituted or unsubstituted C1-C25 alkyl, C1-C25 aryl, or C1-C25 aralkyl, and EO/PO is ethylene oxide, propylene oxide, or a copolymer of ethylene oxide and propylene oxide, and

wherein the second solvent having a boiling point of greater than 150° C. is one or more selected from:

cyclohexyl acetate, dipropylene glycol dimethyl ether, propylene glycol diacetate, dipropylene glycol methyl propylene ether, di(propylene glycol) methyl ether acetate, 1,4-diacetoxybutane, 1,3-butanediol diacetate, 1,6-diacetoxyhexane, tripropylene glycol methyl ether, 1,3-propanediol, propylene glycol, 1,3-butanediol, propylene glycol butyl ether, dipropylene glycol monomethyl ether, diethylene glycol monoethyl ether, di(propylene glycol) butyl ether, tri(propylene glycol) butyl ether,

8. The photoresist developer composition of claim 7 , wherein a concentration of the second solvent having a boiling point of greater than 150° C. is 0.1 wt. % to 30 wt. % of the total weight of the second solvent and the first solvent.

9. The photoresist developer composition of claim 7 , wherein a concentration of the ionic surfactant or non-ionic surfactant is 10 ppm to 1,000 ppm based on the total weight of the developer composition.

10. The photoresist developer composition of claim 7 , wherein the first solvent is one or more selected from propylene glycol methyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), 1-ethoxy-2-propanol (PGEE), γ-butyrolactone (GBL), cyclohexanone (CHN), ethyl lactate (EL), methanol, ethanol, propanol, n-butanol, acetone, dimethylformamide (DMF), isopropanol (IPA), tetrahydrofuran (THF), methyl isobutyl carbinol (MIBC), n-butyl acetate (nBA), and 2-heptanone (MAK).

11. The photoresist developer composition of claim 7 , further comprising water at a concentration of 10 ppm to 250 ppm based on a total composition of the water, enhancement additive, and the first solvent.

12. The photoresist developer composition of claim 7 , wherein a concentration of the first solvent is from about 60 wt. % to about 99 wt. % based on a total weight of the photoresist developer.

13. A method of forming a pattern in a photoresist, comprising:

forming a photoresist composition layer on a substrate;

selectively exposing the photoresist layer to actinic radiation to form a latent pattern; and

developing the latent pattern by applying a developer to the selectively exposed photoresist layer to form a pattern,

wherein the photoresist composition comprises:

a polymer resin;

a photoactive compound;

an organometallic compound;

an enhancement additive; and

a first solvent,

wherein the organometallic compound comprises a metal oxide nanoparticle and one or more organic ligands,

wherein the enhancement additive is an ionic surfactant, or a non-ionic surfactant, or a second solvent having a boiling point of greater than 150° C.,

wherein the ionic surfactant is one or more selected from:

wherein R is a substituted or unsubstituted C1-C12 alkyl, C1-C12 aryl, or C1-C12 aralkyl,

wherein the non-ionic surfactant is one or more selected from:

wherein R, R 1 , and R 2 are the same or different and are a substituted or unsubstituted C1-C25 alkyl, C1-C25 aryl, or C1-C25 aralkyl; and EO/PO is ethylene oxide, propylene oxide, or a copolymer of ethylene oxide and propylene oxide, and

wherein the second solvent having a boiling point of greater than 150° C. is one or more selected from:

cyclohexyl acetate, dipropylene glycol dimethyl ether, propylene glycol diacetate, dipropylene glycol methyl propylene ether, di(propylene glycol) methyl ether acetate, 1,4-diacetoxybutane, 1,3-butanediol diacetate, 1,6-diacetoxyhexane, tripropylene glycol methyl ether, 1,3-propanediol, propylene glycol, 1,3-butanediol, propylene glycol butyl ether, dipropylene glycol monomethyl ether, diethylene glycol monoethyl ether, di(propylene glycol) butyl ether, tri(propylene glycol) butyl ether,

14. The method according to claim 13 , wherein the developer comprises:

the enhancement additive; and

the first solvent.

15. The method according to claim 14 , wherein the developer further comprises water at a concentration of 10 ppm to 250 ppm based on a total composition of the water, enhancement additive, and the first solvent.

16. The method according to claim 13 , wherein a concentration of the second solvent having a boiling point of greater than 150° C. is 3 wt. % to 100 wt. % of the total weight of the second solvent and the first solvent.

17. The method according to claim 13 , wherein the photoresist composition further comprises water at a concentration of 10 ppm to 250 ppm based on a total composition of the water, enhancement additive, and the first solvent.

18. The method according to claim 13 , wherein a concentration of the ionic surfactant or non-ionic surfactant is 10 ppm to 1,000 ppm based on a total weight of the ionic surfactant or non-ionic surfactant and the first solvent.

19. The method according to claim 13 , wherein the first solvent is one or more selected from propylene glycol methyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), 1-ethoxy-2-propanol (PGEE), γ-butyrolactone (GBL), cyclohexanone (CHN), ethyl lactate (EL), methanol, ethanol, propanol, n-butanol, acetone, dimethylformamide (DMF), isopropanol (IPA), tetrahydrofuran (THF), methyl isobutyl carbinol (MIBC), n-butyl acetate (nBA), and 2-heptanone (MAK).

20. The method according to claim 13 , wherein the one or more organic ligands are selected from the group consisting of a carboxylic acid, a sulfonic acid ligand, a methacrylic acid, and ligands including aliphatic or aromatic groups.