IP Library › Granted Patent US 11,728,238
Granted Patent B2
US 11,728,238 · App. 16/524,172 · Granted Aug 15, 2023

Semiconductor package with heat dissipation films and manufacturing method thereof

Inventors: Ting-Yu Yeh (Hsinchu, TW); Cing-He Chen (Taoyuan, TW); Kuo-Chiang Ting (Hsinchu, TW); Weiming Chris Chen (Taipei, TW); Chia-Hao Hsu (Hsinchu, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H01L23/3735H01L21/565H01L23/3107H01L23/367H01L24/09H01L2224/02372H01L2924/3511
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Quick Facts
Patent No.
US 11,728,238
App. No.
16/524,172
Granted
Aug 15, 2023
Kind
B2
Abstract

A semiconductor package includes a redistribution structure, at least one semiconductor device and a plurality of heat dissipation films. The at least one semiconductor device is mounted on the redistribution structure. The plurality of heat dissipation films are disposed on the at least one semiconductor device in a side by side manner and jointly cover an upper surface of the at least one semiconductor device. A manufacturing method of the semiconductor package is also provided.

Claims (31)

1. A semiconductor package, comprising:

a redistribution structure;

at least one semiconductor device mounted on the redistribution structure; and

a plurality of heat dissipation films disposed on the at least one semiconductor device in an array manner, wherein footprints of the plurality of heat dissipation films, from a top view, are the same a thickness of one of the plurality of heat dissipation films is greater than a thickness of other one of the plurality of heat dissipation films, and the one of the plurality of heat dissipation films and the other one of the plurality of heat dissipation films are disposed side-by-side on the same plane of the encapsulated semiconductor package.

2. The semiconductor package as claimed in claim 1 , further comprising an encapsulating material disposed on the redistribution structure and encapsulating the at least one semiconductor device.

3. The semiconductor package as claimed in claim 2 , wherein a top surface of the encapsulating material is coplanar with the upper surface of the at least one semiconductor device, and at least one of the plurality of heat dissipation films disposed on the top surface of the encapsulating material.

4. The semiconductor package as claimed in claim 1 , wherein the at least one semiconductor device comprises a plurality of semiconductor devices disposed on the redistribution structure in a side by side manner and the plurality of heat dissipation films jointly covering upper surfaces of the plurality of semiconductor devices.

5. The semiconductor package as claimed in claim 1 , further comprising a substrate, wherein the redistribution structure is mounted on the substrate through a plurality of electrical connectors.

6. The semiconductor package as claimed in claim 5 , further comprising a cover lid disposed on the substrate and in contact with the plurality of heat dissipation films.

7. The semiconductor package as claimed in claim 1 , wherein the plurality of heat dissipation films comprises at least one first heat dissipation film and at least one second heat dissipation film, the at least one first heat dissipation film and the at least one second heat dissipation film are disposed in a side-by-side manner, and a thickness of the at least one first heat dissipation film is different from that of the at least one second heat dissipation film.

8. A semiconductor package, comprising:

a substrate;

an encapsulated semiconductor package disposed on the substrate; and

a plurality of heat dissipation films disposed on the encapsulated semiconductor package, wherein footprints of the plurality of heat dissipation films, from a top view, are the same, the plurality of heat dissipation film comprises a first heat dissipation film and a second dissipation film disposed side-by-side on the same plane of the encapsulated semiconductor package, and a thickness or viscosity of the first heat dissipation film is greater than a thickness or viscosity of second dissipation film; and

a cover lid disposed on the substrate and in contact with the plurality of heat dissipation films.

9. The semiconductor package as claimed in claim 8 , wherein the encapsulated semiconductor package comprises an encapsulating material and at least one semiconductor device encapsulated by the encapsulating material, and the plurality of heat dissipation films cover an upper surface of the at least one semiconductor device.

10. The semiconductor package as claimed in claim 9 , wherein a top surface of the encapsulating material is coplanar with the upper surface of the at least one semiconductor device, and the plurality of heat dissipation films cover the top surface of the encapsulating material.

11. The semiconductor package as claimed in claim 9 , wherein the at least one semiconductor device comprises a plurality of semiconductor devices disposed on the substrate in a side by side manner and two of the plurality of the heat dissipation films jointly cover one of the plurality of the semiconductor devices.

12. The semiconductor package as claimed in claim 8 , wherein the encapsulated semiconductor package further comprises a redistribution structure where the at least one semiconductor device is disposed, and the redistribution structure is mounted on the substrate through a plurality of electrical connectors.

13. The semiconductor package as claimed in claim 8 , wherein the plurality of heat dissipation films comprises at least one first heat dissipation film and at least one second heat dissipation film, the at least one first heat dissipation film and the at least one second heat dissipation film are disposed in a side-by-side manner, and a thickness of the at least one first heat dissipation film is different from that of the at least one second heat dissipation film.

14. The semiconductor package as claimed in claim 1 , wherein the plurality of heat dissipation films comprises at least one first heat dissipation film and at least one second heat dissipation film, the at least one first heat dissipation film and the at least one second heat dissipation film are disposed in a side-by-side manner, and a viscosity of the at least one first heat dissipation film is different from that of the at least one second heat dissipation film.

15. The semiconductor package as claimed in claim 8 , wherein the plurality of heat dissipation films comprises at least one first heat dissipation film and at least one second heat dissipation film, the at least one first heat dissipation film and the at least one second heat dissipation film are disposed in a side-by-side manner, and a viscosity of the at least one first heat dissipation film is different from that of the at least one second heat dissipation film.

16. The semiconductor package as claimed in claim 4 , wherein the plurality of semiconductor devices comprises at least one first semiconductor device disposed on a central region of the redistribution structure, and a plurality of second semiconductor devices surrounding the at least one first semiconductor device.

17. The semiconductor package as claimed in claim 11 , wherein the plurality of semiconductor devices comprises at least one first semiconductor device disposed on a central region of the redistribution structure, and a plurality of second semiconductor devices surrounding the at least one first semiconductor device.

18. A semiconductor package, comprising:

a substrate;

an encapsulated semiconductor package disposed on the substrate, and comprising at least one semiconductor device and an encapsulating material encapsulating the at least one semiconductor device; and

a plurality of heat dissipation films disposed on the at least one semiconductor device and the encapsulating material, wherein a thickness of one of the plurality of heat dissipation films is greater than a thickness of other one of the plurality of heat dissipation films and the one of the plurality of heat dissipation films and the other one of the plurality of heat dissipation films are disposed side-by-side on an upper surface of the at least one semiconductor device and an upper surface of the encapsulating material, which are at the same level.

19. The semiconductor package as claimed in claim 18 , wherein the one of the plurality of heat dissipation films is located at a peripheral region of the encapsulated semiconductor package and the other one of the plurality of heat dissipation films is located at a central region of the encapsulated semiconductor package.

20. The semiconductor package as claimed in claim 18 , wherein a viscosity of one of the plurality of heat dissipation films is greater than a viscosity of other one of the plurality of heat dissipation films, and the one of the plurality of heat dissipation films and the other one of the plurality of heat dissipation films are disposed on the same surface of the encapsulated semiconductor package.

21. The semiconductor package as claimed in claim 1 , wherein each of the heat dissipation films comprises thermally conductive material mixed with electrically insulating material and free of electrically conductive material.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 3, 2019
From: YEH, TING-YU; CHEN, CING-HE; TING, KUO-CHIANG; CHEN, WEIMING CHRIS; HSU, CHIA-HAO
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 050253/0331 →
Continuity (1)
Related Publication 20210035884A1 · Feb 4, 2021
Cited By (1)
US 12,543,569