Structure with embedded memory device and contact isolation scheme
The present disclosure provides an integrated circuit (IC) structure that includes a fin active region on a substrate; a metal gate stack on the fin active region; a source and a drain on the fin active region, wherein the metal gate stack spans from the source to the drain; an interlayer dielectric (ILD) layer disposed on the source and the drain; a first conductive feature and a second conductive feature formed in the ILD layer and being aligned on the source and the drain, respectively; and a dielectric material layer surrounding the first and second conductive features. The dielectric material layer continuously extends to a bottom surface of the first conductive feature and isolates the first conductive feature from the source and the second conductive feature contacts the drain.
1. An integrated circuit (IC) structure, comprising:
a fin active region on a substrate;
a metal gate stack on the fin active region;
a source and a drain on the fin active region, wherein the metal gate stack is interposed between the source and drain;
an interlayer dielectric (ILD) layer disposed on the source and the drain;
a first conductive feature and a second conductive feature formed in the ILD layer and being aligned on the source and the drain, respectively; wherein
the first conductive feature is separated and isolated from the source by a portion of the ILD layer;
the second conductive feature contacts the drain; and
a dielectric material layer surrounding and contacting the second conductive feature, wherein a dielectric capping layer extends from a first portion of the dielectric material layer on a first sidewall of the second conductive feature to a second portion of the dielectric material layer on a second sidewall of the second conductive feature, wherein
the dielectric material layer continuously extends from a top surface of the second conductive feature to a bottom surface of the second conductive feature; and
the first dielectric material layer is different from the ILD layer in composition.
2. The IC structure of claim 1 , wherein
each of the first and second conductive features includes a glue layer and a bulk metal being wrapped by the glue layer;
the glue layer includes a titanium film and a titanium nitride film; and
the bulk metal includes one of tungsten, copper, aluminum, and a combination thereof.
3. The IC structure of claim 1 , further comprising a doped well of a first-type conductivity, wherein
the source and the drain have a second-type of conductivity and are disposed in the doped well;
a portion of the active region functions as a channel, the channel is underlying the metal gate stack has the first-type of conductivity; and
the source, the drain, the channel and the metal gate stack are configured to be components of a field-effect transistor.
4. An integrated circuit (IC) structure, comprising:
a fin active region on a semiconductor substrate;
a metal gate stack on the fin active region and having a gate dielectric layer and a gate electrode;
a source and a drain on the fin active region, wherein the metal gate stack spans from the source to the drain;
an interlayer dielectric (ILD) layer disposed on the source and the drain, wherein the ILD layer surrounds the metal gate stack and wherein the gate electrode has a top surface being coplanar with a top surface of the ILD layer;
a dielectric capping layer disposed on the ILD layer and the metal gate stack, wherein the dielectric capping layer contacts the gate electrode, and wherein the dielectric capping layer extends over the metal gate stack from a first portion of the ILD layer on one side of the metal gate stack to a second portion of the ILD layer on an opposing side of the metal gate stack;
a first conductive feature and a second conductive feature formed in the ILD layer and being aligned on the source and the drain, respectively; and
a dielectric material layer surrounding the first and second conductive features, wherein
the dielectric capping layer extends from a first portion of the dielectric material layer on a sidewall of the first conductive feature to a second portion of the dielectric material layer on a sidewall of the second conductive feature;
the second conductive feature contacts the drain;
the dielectric material layer continuously extends to a bottom surface of the first conductive feature and isolates the first conductive feature from the source;
the dielectric material layer includes a first dielectric material; and
the ILD layer includes a second dielectric material different from the first dielectric material in composition.
5. The IC structure of claim 4 , wherein
the metal gate stack includes a height H;
the dielectric material layer includes a thickness T; and
a ratio T/H ranges from 1/20 to 1/2.
6. The IC structure of claim 4 , wherein
the first dielectric material includes one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, and a combination thereof; and
the second dielectric material includes a low-k dielectric material.
7. The IC structure of claim 4 , wherein the dielectric material layer vertically extends through the dielectric capping layer.
8. The IC structure of claim 4 , wherein
each of the first and second conductive features includes a glue layer and a bulk metal being wrapped by the glue layer;
the glue layer includes a titanium film and a titanium nitride film; and
the bulk metal includes one of tungsten, copper, aluminum, and a combination thereof.
9. The IC structure of claim 8 , wherein the glue layer continuously extends to separate the bulk metal of the first conductive feature from the dielectric material layer.
10. The IC structure of claim 4 , wherein
the metal gate stack has an elongated shape oriented along a first direction;
the gate electrode includes multiple metal-containing films being U-shaped from a cross-sectional view along a plane perpendicular to the first direction; and
the dielectric capping layer contacts each of the multiple metal-containing films.
11. The IC structure of claim 4 , further comprising a silicide layer disposed on and self-aligned with the metal gate stack.
12. The IC structure of claim 4 , further comprising a doped well of a first-type conductivity, wherein
the source and the drain have a second-type of conductivity and are disposed in the doped well; and
the source, the drain, the channel and the metal gate stack are configured to be components of a field-effect transistor.
13. An integrated circuit (IC) structure, comprising:
a fin active region on a semiconductor substrate;
a metal gate stack on the fin active region and having a gate dielectric layer and a gate electrode;
a source and a drain on the fin active region, wherein the metal gate stack spans from the source to the drain;
an interlayer dielectric (ILD) layer disposed on the source and the drain, wherein the ILD layer surrounds the metal gate stack and wherein the gate electrode has a top surface being coplanar with a top surface of the ILD layer;
a dielectric capping layer disposed on the top surface of the ILD layer and the top surface of the metal gate stack, wherein the dielectric capping layer contacts the gate electrode, and wherein the dielectric capping layer extends over the metal gate stack from a first portion of the ILD layer on one side of the metal gate stack to a second portion of the ILD layer on an opposing side of the metal gate stack;
a first conductive feature and a second conductive feature formed in the ILD layer and being aligned on the source and the drain, respectively, wherein the first conductive feature is isolated from the source and the second conductive feature contacts the drain; and
a first dielectric material layer surrounding the first and second conductive features, wherein the dielectric capping layer extends from a first portion of the first dielectric material layer on a sidewall of the first conductive feature to a second portion of the first dielectric material layer on a sidewall of the second conductive feature, wherein
the first dielectric material layer continuously extends to a bottom surface of the first conductive feature and isolates the first conductive feature from the source; and
the first dielectric material layer is different from the ILD layer in composition.
14. The IC structure of claim 13 , wherein the first conductive feature is isolated from the source by the ILD layer.
15. The IC structure of claim 13 , wherein
the metal gate stack includes a height H;
the first dielectric material layer includes a thickness T; and
a ratio T/H ranges from 1/20 to 1/2.
16. The IC structure of claim 15 , wherein the first dielectric material layer contacts the first conductive feature and separates the first conductive feature from the ILD layer and the dielectric capping layer.
17. The IC structure of claim 15 , wherein the first dielectric material layer extends through the dielectric capping layer.
18. The IC structure of claim 13 , wherein
the first conductive feature spans a height less than that of the second conductive feature;
the first conductive feature includes a first top surface and a first bottom surface;
the second conductive feature includes a second top surface and a second bottom surface;
the first top surface and the second top surface are coplanar; and
the second bottom surface is below the first bottom surface.
19. The IC structure of claim 4 , wherein the dielectric material layer contacts the first conductive feature and separates the first conductive feature from the ILD layer and the dielectric capping layer.
20. The IC structure of claim 8 , wherein the dielectric capping layer directly contacts the glue layer and the dielectric material layer.