PLACE-AND-ROUTE RESISTANCE AND CAPACITANCE OPTIMIZATION USING MULTI-HEIGHT INTERCONNECT TRENCHES AND AIR GAP DIELECTRICS
Embodiments disclosed herein include a semiconductor device with interconnects with non-uniform heights. In an embodiment, the semiconductor device comprises a semiconductor substrate, and a back end of line (BEOL) stack over the semiconductor substrate. In an embodiment, the BEOL stack comprises first interconnects and second interconnects in an interconnect layer of the BEOL stack. In an embodiment, the first interconnects have a first height and the second interconnects have a second height that is different than the first height.
1 . A semiconductor device, comprising:
a semiconductor substrate; and
a back end of line (BEOL) stack over the semiconductor substrate, wherein the BEOL stack comprises:
first interconnects and second interconnects in an interconnect layer of the BEOL stack, wherein the first interconnects have a first height and the second interconnects have a second height that is different than the first height.
2 . The semiconductor device of claim 1 , further comprising:
an air gap dielectric surrounding the first interconnects and/or the second interconnects.
3 . The semiconductor device of claim 1 , wherein the semiconductor substrate comprises a first processing block and a second processing block.
4 . The semiconductor device of claim 3 , wherein an interconnect scheme for the first processing block comprises first interconnects, and wherein an interconnect scheme for the second processing block comprises second interconnects.
5 . The semiconductor device of claim 3 , wherein the first processing block comprises a first path and a second path.
6 . The semiconductor device of claim 5 , wherein the first path comprises first interconnects, and wherein the second path comprises second interconnects.
7 . The semiconductor device of claim 5 , wherein the first path comprises a first net and a second net.
8 . The semiconductor device of claim 7 , wherein the first net comprises first interconnects, and wherein the second net comprises second interconnects.
9 . The semiconductor device of claim 7 , wherein the first net comprises a first segment and a second segment.
10 . The semiconductor device of claim 9 , wherein the first segment comprises first interconnects, and wherein the second segment comprises second interconnects.
11 . The semiconductor device of claim 1 , further comprising:
a signal path comprising:
a drive cell; and
a plurality of load cells, wherein each load cell is electrically coupled to the drive cell by interconnects in the BEOL stack.
12 . The semiconductor device of claim 11 , wherein a first portion of the signal path proximate to the drive cell is one of the first interconnects, and wherein second portions of the signal path proximate to the plurality of load cells are ones of the second interconnects.
13 . The semiconductor device of claim 1 , wherein the BEOL stack comprises a plurality of interconnect layers that each comprise first interconnects and second interconnects.
14 . The semiconductor device of claim 1 , further comprising:
third interconnects in the interconnect layer of the BEOL stack, wherein the third interconnects have a third height that is between the first height and the second height.
15 . A semiconductor device, comprising:
a semiconductor substrate, comprising:
a processor block; and
a memory block coupled to the processor block; and
a back end of line (BEOL) stack over the semiconductor substrate, wherein the BEOL stack provides conductive coupling between the processor block and the memory block, wherein the BEOL stack comprises a plurality of interconnect layers, wherein one or more of the plurality of interconnect layer comprise:
first interconnects having a first height; and
second interconnects having a second height that is less than the first height.
16 . The semiconductor device of claim 15 , wherein the memory block is a register file and comprises word lines and bit lines implemented in the BEOL stack.
17 . The semiconductor device of claim 16 , wherein the word lines are implemented with first interconnects.
18 . The semiconductor device of claim 17 , wherein the bit lines are implemented with second interconnects.
19 . The semiconductor device of claim 16 , further comprising air-gap dielectrics, wherein the air-gap dielectrics are around the word lines and the bit lines, or wherein the air-gap dielectrics are only around the bit lines.
20 . The semiconductor device of claim 15 , wherein the memory block is static random access memory (SRAM), and comprises word lines and bit lines implemented in the BEOL stack.
21 . The semiconductor device of claim 20 , wherein the bit lines are implemented with second interconnects.
22 . The semiconductor device of claim 21 , further comprising:
an air gap dielectric around the bit lines, and wherein the word lines are implemented with first interconnects.
23 . An electronic system, comprising:
a board; and
an electronic package coupled to the board, wherein the electronic package comprises a semiconductor die, and wherein the semiconductor die comprises:
a semiconductor substrate; and
first interconnects and second interconnects in an interconnect layer over the semiconductor substrate, wherein the first interconnects have a first height and the second interconnects have a second height that is different than the first height.
24 . The electronic system of claim 23 , wherein the semiconductor substrate comprises:
a processor block; and
a memory block that is electrically coupled to the processor block by one or more interconnects in the interconnect layer.
25 . The electronic system of claim 24 , wherein the memory block is a register file or a static random access memory (SRAM).