Separate epitaxy layers for nanowire stack GAA device
The current disclosure describes techniques for forming gate-all-around (“GAA”) devices from stacks of separately formed nanowire semiconductor strips. The separately formed nanowire semiconductor strips are tailored for the respective GAA devices. A trench is formed in a first stack of epitaxy layers to define a space for forming a second stack of epitaxy layers. The trench bottom is modified to have determined or known parameters in the shapes or crystalline facet orientations. The known parameters of the trench bottom are used to select suitable processes to fill the trench bottom with a relatively flat base surface.
1. A method, comprising:
forming a first stack of a first plurality of semiconductor layers over a crystalline substrate;
forming a trench within the first stack to expose the crystalline substrate;
forming a device spacer adjacent to a sidewall of the trench;
forming a recess portion at a bottom of the trench through an etching process that is anisotropic among crystalline facets of the crystalline substrate, the recess portion having a bottom portion and a sloped sidewall portion that has an angle to the bottom portion;
forming a semiconductor base layer within the recess portion; and
forming a second stack of a second plurality of semiconductor layers over the semiconductor base layer.
2. The method of claim 1 , wherein the forming the semiconductor base layer includes a pre-baking process.
3. The method of claim 1 , wherein the angle between the sloped sidewall portion to the bottom portion is between 5 degree and 89 degree.
4. The method of claim 3 , wherein the crystalline substrate is silicon and the angle is within a range between 45 degree to 65 degree.
5. The method of claim 1 , wherein an epitaxy process is used in the forming the semiconductor base layer, the epitaxy process forming an epitaxial material of the semiconductor base layer slower along a facet orientation of the sloped sidewall portion than along a facet orientation of the bottom portion.
6. The method of claim 1 , wherein the first stack includes a first silicon germanium layer and the second stack includes a second silicon germanium layer, the second silicon germanium layer includes a different germanium concentration than the first silicon germanium layer.
7. The method of claim 1 , wherein the first stack includes a first silicon layer and the second stack includes a second silicon layer, the second silicon layer includes a different thickness from the first silicon layer.
8. A method of forming a semiconductor device, the method comprising:
forming a first stack of alternating layers of a first semiconductor material and a second semiconductor material over a crystalline substrate;
forming a trench within the first stack, wherein a surface of the crystalline substrate is exposed in the trench;
recessing a bottom of the trench to form a recess in the crystalline substrate, wherein the recess has sloped sidewalls along a first crystal plane of the crystalline substrate and a bottom surface along a second crystal plane of the crystalline substrate;
filling the recess with a base semiconductor layer;
forming a second stack of alternating layers of a third semiconductor material and a fourth semiconductor material;
removing the alternating layers of the fourth semiconductor material; and
forming a gate structure over the alternating layers of the third semiconductor material.
9. The method of claim 8 further comprising:
prior to recessing the bottom of the trench, forming a spacer along sidewalls of the trench.
10. The method of claim 9 , wherein the recess extends under the spacer.
11. The method of claim 8 , wherein the third semiconductor material and the first semiconductor material are silicon germanium.
12. The method of claim 11 , wherein the third semiconductor material and the first semiconductor material have different germanium concentrations.
13. The method of claim 12 , wherein the second semiconductor material and the fourth semiconductor material are silicon.
14. The method of claim 8 , wherein forming the base semiconductor layer comprises:
forming a base silicon germanium layer on the crystalline substrate; and
forming a base silicon layer over the base silicon germanium layer, wherein the second stack of alternating layers is formed on the base silicon layer.
15. The method of claim 8 , wherein filling the recess comprises an epitaxial growth process in which a growth rate along the sloped sidewalls of the recess is less than a growth rate along a bottom of the recess.
16. A method of forming a semiconductor device, the method comprising:
forming a first stack of alternating layers of a first semiconductor material and a second semiconductor material over a crystalline substrate;
forming a trench within the first stack, wherein a surface of the crystalline substrate is exposed in the trench;
forming a dielectric layer along sidewalls and a bottom of the trench;
removing the dielectric layer along the bottom of the trench to form a spacer along a sidewall of the trench and to expose the crystalline substrate in the trench;
etching the crystalline substrate to form a recess, wherein the recess has sloped sidewalls along a first crystal plane of the crystalline substrate and a bottom surface along a second crystal plane of the crystalline substrate;
epitaxially growing a base semiconductor layer in the recess;
forming a second stack of alternating layers of a third semiconductor material and a fourth semiconductor material over the base semiconductor layer;
removing portions of one of the alternating layers of the third semiconductor material and the alternating layers of the fourth semiconductor material; and
forming a gate structure over remaining portions of the second stack of alternating layers.
17. The method of claim 16 , wherein epitaxially growing the base semiconductor layer comprises:
epitaxially growing a first base layer; and
epitaxially growing a second base layer over the first base layer.
18. The method of claim 17 , wherein the first base layer and the third semiconductor layer comprise a same type of first material, and wherein the second base layer and the fourth semiconductor layer comprise a same type of second material.
19. The method of claim 18 , wherein the same type of first material comprises silicon germanium, wherein a thickness of the first base layer is less than a critical thickness of the silicon germanium of the first base layer.
20. The method of claim 18 , wherein etching the crystalline substrate to form the recess comprises exposing a lower surface of the spacer.