Light-emitting device and electronic device
A highly reliable light-emitting device is provided. Damage to an element due to externally applied physical power is suppressed. Alternatively, in a process of pressure-bonding of an FPC, damage to a resin and a wiring which are in contact with a flexible substrate due to heat is suppressed. A neutral plane at which stress-strain is not generated when a flexible light-emitting device including an organic EL element is deformed, is positioned in the vicinity of a transistor and the organic EL element. Alternatively, the hardness of the outermost surface of a light-emitting device is high. Alternatively, a substrate having a coefficient of thermal expansion of 10 ppm/K or lower is used as a substrate that overlaps with a terminal portion connected to an FPC.
1. A light-emitting device comprising:
an organic resin layer over a first substrate;
a terminal electrode over the organic resin layer;
a transistor over the organic resin layer;
a planarization layer over the transistor;
an organic EL element over the planarization layer, the organic EL element electrically connected to the transistor;
an adhesive layer over the planarization layer and the organic EL element;
a second substrate over the adhesive layer; and
a third substrate,
wherein the organic resin layer comprises a region extending beyond an end portion of the first substrate,
wherein the third substrate overlaps with the region of the organic resin layer, and
wherein the terminal electrode comprises a region overlapping with the third substrate with the organic resin layer therebetween.
2. The light-emitting device according to claim 1 ,
wherein a distance from a bottom surface of the first substrate to a top surface of the planarization layer is 0.8 to 1.2 times as large as a distance from the top surface of the planarization layer to a top surface of the second substrate.
3. The light-emitting device according to claim 1 , further comprising:
an IC electrically connected to the ten final electrode,
wherein the third substrate comprises a region overlapping with the IC with the organic resin layer and the terminal electrode therebetween.
4. A light-emitting device comprising:
an organic resin layer over a first substrate;
a terminal electrode over the organic resin layer;
a transistor over the organic resin layer;
a planarization layer over the transistor;
an organic EL element over the planarization layer, the organic EL element electrically connected to the transistor;
an adhesive layer over the planarization layer and the organic EL element;
a second substrate over the adhesive layer; and
a third substrate,
wherein the organic resin layer comprises a region extending beyond an end portion of the first substrate,
wherein the third substrate overlaps with the region of the organic resin layer, and
wherein a distance from a bottom surface of the first substrate to an interface between the planarization layer and a lower electrode of the organic EL element is 0.8 to 1.2 times as large as a distance from the interface to a top surface of the second substrate.
5. The light-emitting device according to claim 4 ,
wherein a neutral plane is positioned in the planarization layer, in the transistor, in the organic EL element, or near both the transistor and the organic EL element.
6. The light-emitting device according to claim 4 , further comprising:
an IC electrically connected to the terminal electrode,
wherein the third substrate comprises a region overlapping with the IC with the organic resin layer and the terminal electrode therebetween.