Light emitting diode structure
A light emitting diode includes a base layer, an electric contact layer, a semiconductor stack, and an insulation layer. The base layer has a maximum of a first width. The electric contact layer has a maximum of a second width and is disposed on the base layer. The semiconductor stack disposed on the electric contact layer has a maximum of a third width, and includes a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer stacked in sequence, wherein a width of the first type semiconductor layer is smaller than the maximum of the third width. The insulation layer covers the sidewalls of the base layer, the electric contact layer, and the semiconductor stack. The maximum of the second width is greater than the maximum of the third width and the maximum of the second width is less than the maximum of the first width.
1. A light emitting diode structure, comprising:
a semiconductor stack comprising a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer stacked from top to bottom in sequence, wherein the second type semiconductor layer comprises a first portion and a second portion, the first portion is disposed on the second portion, and a maximum width of the second portion is greater than a maximum width of the first portion;
an insulation layer covering a sidewall of the semiconductor stack and an upper surface of the second portion, the insulation layer having a first opening and a second opening respectively located on the first type semiconductor layer and the second portion;
a first conductive pad electrically connected to the first type semiconductor layer through the first opening;
a second conductive pad electrically connected to the second portion through the second opening; and
a supporting breakpoint disposed over the insulation layer and between the first conductive pad and the second conductive pad, wherein the first conductive pad and the second conductive pad are spaced apart from the supporting breakpoint.
2. The light emitting diode structure of claim 1 , further comprising a bonding substrate electrically connected to the first conductive pad and the second conductive pad.
3. The light emitting diode structure of claim 2 , further comprising a first adhesive layer and a second adhesive layer respectively disposed between the first conductive pad and the bonding substrate and between the second conductive pad and the bonding substrate, wherein the first adhesive layer is electrically insulated from the second adhesive layer.
4. The light emitting diode structure of claim 1 , further comprising an electrode layer disposed between the first type semiconductor layer and the first conductive pad.
5. The light emitting diode structure of claim 1 , further comprising a conductive block disposed in the second opening, wherein the second conductive pad covers a sidewall and a top surface of the conductive block.
6. The light emitting diode structure of claim 5 , wherein a top surface of the insulation layer positioned on the first portion is substantially level with the top surface of the conductive block.
7. The light emitting diode structure of claim 1 , wherein the first conductive pad extends to cover a portion of the insulation layer.
8. The light emitting diode structure of claim 1 , wherein a top surface of the first conductive pad is substantially level with a top surface of the second conductive pad.
9. The light emitting diode structure of claim 1 , wherein the second type semiconductor layer has a surface exposed outside and the surface has a rough texture.
10. A light emitting diode structure, comprising:
a semiconductor stack comprising a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer stacked from top to bottom in sequence, wherein the second type semiconductor layer comprises a first portion and a second portion, the first portion is disposed on the second portion, and a maximum width of the second portion is greater than a maximum width of the first portion;
an insulation layer covering a sidewall of the semiconductor stack and an upper surface of the second portion, the insulation layer having a first opening and a second opening respectively located on the first type semiconductor layer and the second portion;
a first conductive pad electrically connected to the first type semiconductor layer through the first opening;
a second conductive pad electrically connected to the second portion through the second opening; and
a supporting breakpoint disposed over the insulation layer and between the first conductive pad and the second conductive pad, wherein the supporting breakpoint has an exposed upper surface.