Granted Patent
B2
US 10,978,359 · App. 16/544,998 · Granted Apr 13, 2021
SiC substrate evaluation method, SiC epitaxial wafer manufacturing method, and SiC epitaxial wafer
Assignee:
SHOWA DENKO K.K.
H01L22/12G01N23/2258H01L21/0243H01L21/0262H01L21/02378H01L21/02529H01L21/67288H01L22/24H01L29/1608H01L29/34H01L29/36
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Abstract
Provided is an SiC substrate evaluation that includes irradiating a first surface of an SiC substrate which is cut out from an SiC ingot with excitation light before an epitaxial film is laminated on the first surface to perform photoluminescence measurement.
Claims (4)
1. An SiC epitaxial wafer comprising:
an SiC substrate; and
an epitaxial film which is laminated on a first surface of the SiC substrate,
wherein a region where an intensity of photoluminescence caused by impurities becomes higher than an intensity of photoluminescence caused by an SiC band end is equal to or less than 50% of a total area of the first surface in the first surface of the SiC substrate.
Assignments (3)
CHANGE OF ADDRESS
Recorded Feb 14, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066599/0037 →
CHANGE OF NAME
Recorded Jun 23, 2023
From: SHOWA DENKO K.K.
To: RESONAC CORPORATION
Reel/Frame 064082/0513 →
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded Aug 20, 2019
From: NOGUCHI, SHUNSUKE
To: SHOWA DENKO K.K.
Reel/Frame 050098/0219 →
Priority Claims (1)
JP JP2018-168954
· Sep 10, 2018
· national
Continuity (1)