Imaging device, method of manufacturing the same, and camera

1. A back-side illuminated imaging device comprising:

a substrate including a first photoelectric conversion region and a second photoelectric conversion region;

a contact plug connecting a wiring layer and the substrate; and

a capacitive element including a first metal electrode and a single second metal electrode disposed between the first metal electrode and the substrate,

wherein a distance between the second metal electrode and the substrate is shorter than a length of the contact plug, and

wherein the single second metal electrode extends from a position overlapping at least a portion of the first photoelectric conversion region to a position overlapping at least a portion of the second photoelectric conversion region in a planar view with respect to a main surface of the substrate.

2. The imaging device according to claim 1 , wherein the substrate further includes a floating diffusion configured to convert charge generated in the first photoelectric conversion region into a voltage, and

wherein the capacitive element is electrically connected to a signal path from the first photoelectric conversion region to the floating diffusion.

3. The imaging device according to claim 2 , wherein the capacitive element is connected to the floating diffusion via a switch element.

4. The imaging device according to claim 2 , wherein the imaging device comprises two transistors in the signal path from the first photoelectric conversion region to the floating diffusion, and

wherein the capacitive element is connected to a node between the two transistors.

5. The imaging device according to claim 4 , wherein the substrate further includes an impurity region,

wherein the two transistors include a first transistor configured to transfer charge from the first photoelectric conversion region to the impurity region and a second transistor configured to transfer charge from the impurity region to the floating diffusion, and

wherein the second metal electrode overlaps at least a part of the impurity region in a planar view with respect to the main surface of the substrate.

6. The imaging device according to claim 1 , wherein a distance between the first metal electrode and the substrate is shorter than a length of the contact plug.

7. The imaging device according to claim 1 , wherein the second metal electrode overlaps an entire surface of the first photoelectric conversion region in a planar view with respect to the main surface of the substrate.

8. The imaging device according to claim 1 , wherein charge generated in each of the first photoelectric conversion region and the second photoelectric conversion region is converted into a voltage by a common floating diffusion.

9. The imaging device according to claim 1 , wherein the first metal electrode extends from a position overlapping at least a portion of the first photoelectric conversion region to a position overlapping at least a portion of the second photoelectric conversion region in a planar view with respect to the main surface of the substrate.

10. The imaging device according to claim 1 , further comprising:

an insulating layer located between the substrate and the wiring layer; and

a capacitive insulating film located between the first metal electrode and the second metal electrode and having a dielectric constant higher than the insulating layer.

11. The imaging device according to claim 1 , wherein the second metal electrode is connected to a region of the substrate to which a ground voltage is supplied.

12. A camera comprising:

the imaging device according to claim 1 ; and

a processing unit configured to process a signal output from the imaging device.

13. The imaging device according to claim 1 , wherein the first metal electrode of the capacitive element is a single first metal electrode extending from a position overlapping at least a portion of the first photoelectric conversion region to a position overlapping at least a portion of the second photoelectric conversion region in a planar view with respect to the main surface of the substrate.

14. The imaging device according to claim 13 , wherein the contact plug connecting the wiring layer and the substrate is a first contact plug,

wherein the imaging device further comprises a second contact plug connecting the single first metal electrode and the wiring layer, and

wherein the second contact plug is located between the first photoelectric conversion region and the second photoelectric conversion region in a planar view with respect to the main surface of the substrate.

15. A method of manufacturing an imaging device, the method comprising:

forming at least one metal electrode of a capacitive element above a substrate, the substrate including a first photoelectric conversion region and a second photoelectric conversion region, the at least one metal electrode of the capacitive element including a single metal electrode extending from a position overlapping at least a portion of the first photoelectric conversion region to a position overlapping at least a portion of the second photoelectric conversion region in a planar view with respect to a main surface of the substrate;

forming an insulating layer above the substrate and the at least one metal electrode;

forming a contact plug through the insulating layer; and

forming a wiring layer above the insulating layer and the contact plug.