IP Library › Granted Patent US 12,192,660
Granted Patent B2
US 12,192,660 · App. 18/352,371 · Granted Jan 7, 2025

Photoelectric conversion device, photoelectric conversion system, and moving body

Inventor: Yusuke Onuki (Kanagawa, JP)
Assignee: Canon Kabushiki Kaisha
H04N25/772H04N25/75
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Quick Facts
Patent No.
US 12,192,660
App. No.
18/352,371
Granted
Jan 7, 2025
Kind
B2
Abstract

A photoelectric conversion device includes a photoelectric converter, a first node configured to be supplied with charges from the photoelectric converter, an amplification transistor configured to output a signal corresponding to a voltage of the first node, a first transistor configured to open/close a path between the first node and a second node not included in a path from the photoelectric converter to the first node, and a second transistor configured to open/close a path between the second node and a third node. A second capacitance which is added to the second node when the second transistor is set in a conductive state is larger than a first capacitance which is added to the first node when the first transistor is set in a conductive state.

Claims (66)

1. A photoelectric conversion device comprising:

a photoelectric converter;

a first node configured to be supplied with charges from the photoelectric converter;

an amplification transistor configured to output a signal corresponding to a voltage of the first node;

a first transistor configured to open/close a path between the first node and a second node not included in a path from the photoelectric converter to the first node; and

a second transistor configured to open/close a path between the second node and a third node,

wherein a gate length of the second transistor is longer than a gate length of the first transistor.

2. The device according to claim 1 , wherein a gate width of the second transistor is equal to a gate width of the first transistor.

3. The device according to claim 1 , wherein a channel length direction of the first transistor and the second transistor is parallel to one side of the photoelectric converter.

4. The device according to claim 1 , wherein the first transistor, the second transistor, and a third transistor are arranged in a first active region, and

wherein the amplification transistor is arranged in a second active region.

5. The device according to claim 4 , wherein the selection transistor is arranged in the second active region.

6. The device according to claim 1 , wherein a second capacitance which is added to the second node when the second transistor is set in a conductive state is larger than a first capacitance which is added to the first node when the first transistor is set in a conductive state.

7. The device according to claim 1 , wherein a third capacitance which is added to the third node when a third transistor is set in a conductive state is larger than the second capacitance which is added to the second node when the second transistor is set in a conductive state.

8. The device according to claim 1 , wherein a difference between a gate width of the first transistor and a gate width of the second transistor is smaller than a difference between a gate length of the first transistor and a gate length of the second transistor.

9. A photoelectric conversion system comprising:

the photoelectric conversion device according to claim 1 ; and

a signal processor configured to process a signal output from the photoelectric conversion device.

10. A moving body comprising:

the photoelectric conversion device according to claim 1 ;

a distance information acquisition unit configured to acquire distance information to a target object from distance measurement information based on a signal from the photoelectric conversion device; and

a control unit configured to control the moving body based on the distance information.

11. A photoelectric conversion device comprising:

a photoelectric converter;

a first node configured to be supplied with charges from the photoelectric converter;

an amplification transistor configured to output a signal corresponding to a voltage of the first node;

a first transistor configured to open/close a path between the first node and a second node not included in a path from the photoelectric converter to the first node;

a second transistor configured to open/close a path between the second node and a third node;

a third transistor arranged in a path between the third node and a fourth node; and

a reset transistor configured to reset a potential of the first node, and to open/close a path between the fourth node and a predetermined voltage line,

wherein a fixed potential that sets the third transistor in a conductive state is applied to a gate of the third transistor from the predetermined voltage line.

12. The device according to claim 11 , wherein a capacitance of the third transistor is larger than a capacitance of the first transistor.

13. The device according to claim 11 , wherein a capacitance of the third transistor is larger than a capacitance of the first node when the first transistor is in a non-conductive state.

14. The device according to claim 11 , wherein a gate width of the second transistor is equal to a gate width of the first transistor.

15. The device according to claim 11 , wherein a difference between a gate width of the first transistor and a gate width of the second transistor is smaller than a difference between a gate length of the first transistor and a gate length of the second transistor.

16. The device according to claim 11 , wherein a channel length direction of the first transistor and the second transistor is parallel to one side of the photoelectric converter.

17. The device according to claim 11 , wherein the first transistor, the second transistor, and the third transistor are arranged in a first active region, and

wherein the amplification transistor is arranged in a second active region.

18. The device according to claim 17 , wherein the selection transistor is arranged in the second active region.

19. A photoelectric conversion system comprising:

the photoelectric conversion device according to claim 11 ; and

a signal processor configured to process a signal output from the photoelectric conversion device.

20. A moving body comprising:

the photoelectric conversion device according to claim 11 ;

a distance information acquisition unit configured to acquire distance information to a target object from distance measurement information based on a signal from the photoelectric conversion device; and

a control unit configured to control the moving body based on the distance information.

21. A photoelectric conversion device comprising:

a photoelectric converter;

a first node configured to be supplied with charges from the photoelectric converter;

an amplification transistor configured to output a signal corresponding to a voltage of the first node;

a first transistor configured to open/close a path between the first node and a second node not included in a path from the photoelectric converter to the first node;

a second transistor configured to open/close a path between the second node and a third node;

a third transistor arranged in a path between the third node and a fourth node; and

a reset transistor configured to reset a potential of the first node, and to open/close a path between the fourth node and a predetermined voltage line,

wherein a predetermined voltage line is connected to a gate of the third transistor.

22. The device according to claim 21 , wherein a capacitance of the third transistor is larger than a capacitance of the first transistor.

23. The device according to claim 21 , wherein a capacitance of the third transistor is larger than a capacitance of the first node when the first transistor is in a non-conductive state.

24. The device according to claim 21 , wherein a gate width of the second transistor is equal to a gate width of the first transistor.

25. The device according to claim 21 , wherein a difference between a gate width of the first transistor and a gate width of the second transistor is smaller than a difference between a gate length of the first transistor and a gate length of the second transistor.

26. A photoelectric conversion system comprising:

the photoelectric conversion device according to claim 21 ; and

a signal processor configured to process a signal output from the photoelectric conversion device.

27. A moving body comprising:

the photoelectric conversion device according to claim 21 ;

a distance information acquisition unit configured to acquire distance information to a target object from distance measurement information based on a signal from the photoelectric conversion device; and

a control unit configured to control the moving body based on the distance information.

Priority Claims (1)
JP 2021-016039 · Feb 3, 2021 · national
Continuity (2)
Continuation 17588469 · Jan 31, 2022
Related Publication 20230362517A1 · Nov 9, 2023
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