Electrode contacts
A device structure providing contact to conductive layers via a deep trench structure is disclosed. The device includes a first dielectric layer including a first opening. A first conductive layer is deposited over the first dielectric layer and the first opening. A second dielectric layer is deposited on the first conductive layer. The second dielectric layer includes a second opening. A second conductive layer is deposited over the second dielectric layer and the first and second openings. A semiconductor layer is deposited on the second dielectric layer such that the semiconductor layer is not continuous on at least part of the walls of the first or second openings. A top electrode layer is deposited on the semiconductor layer. The top electrode layer is in contact with the second conductive layer on at least part of the walls of the first or second openings.
1. A device structure comprising:
a material structure including a top surface and a side wall integral with and joining the top surface, the material structure comprising a first conductive layer forming the side wall including a first portion and a second portion of the sidewall;
at least one material layer deposited on the material structure, the at least one material layer being continuous on the top surface of the material structure, continuously covering the first portion of the side wall, and having at least one discontinuity on the second portion of the side wall; and
a second conductive layer deposited on the at least one material layer, the second conductive layer in contact with the material structure on the second portion of the side wall and separated from the material structure by the at least one material layer on the first portion of the side wall, the at least one material layer comprising material different from a material of the second conductive layer.
2. The device structure of claim 1 , wherein the first conductive layer forms the top surface of the material structure.
3. The device structure of claim 1 , wherein the at least one material layer prevents electrical contact between the first and second conductive layers on the first portion of the side wall.
4. The device structure of claim 1 , wherein the at least one discontinuity in the at least one material layer provides electrical contact between the first and second conductive layers on the second portion of the side wall.
5. The device structure of claim 1 , wherein the side wall is created by one of lithography, lift off, moulding or shadow masking.
6. The device structure of claim 1 , wherein the at least one material layer is part of an organic light emitting diode structure.
7. The device structure of claim 1 , wherein the material structure comprises at least one of a silicon-nitride dielectric layer and a polymer dielectric layer.
8. The device structure of claim 1 , wherein the material structure comprises at least one layer, and wherein the at least one layer of the material structure, the first conductive layer, the second conductive layer, and the at least one material layer are deposited via at least one of PECVD, CVD, sputtering, vapor deposition, printing, spin coating, and spray coating.
9. The device structure of claim 1 , wherein the first portion of the side wall comprises a lower portion of the side wall and the second portion of the side wall comprises a portion of the side wall between the lower portion of the side wall and the top surface.
10. The device structure of claim 1 , wherein the at least one material layer comprises at least one of a semiconductor layer and a dielectric layer.
11. A method of fabricating a device structure, the method comprising:
fabricating a material structure including a top surface and a side wall integral with and joining the top surface, the material structure comprising a first conductive layer forming the side wall including a first portion and a second portion of the sidewall;
depositing at least one material layer on the material structure, the at least one material layer being continuous on the top surface of the material structure, continuously covering the first portion of the side wall, and having at least one discontinuity on the second portion of the side wall; and
depositing a second first conductive layer on the at least one material layer, the second first conductive layer in contact with the material structure on the second portion of the side wall and separated from the material structure by the at least one material layer on the first portion of the side wall, the at least one material layer comprising material different from a material of the second first conductive layer.
12. The method of claim 11 , wherein fabricating the material structure comprises depositing the first conductive layer such that it forms the top surface of the material structure.
13. The method of claim 11 , wherein the at least one material layer is deposited such that the at least one material layer prevents electrical contact between the first and second conductive layers on the first portion of the side wall.
14. The method of claim 11 , wherein the at least one material layer is deposited such that the at least one discontinuity in the at least one material layer provides electrical contact between the first and second conductive layers on the second portion of the side wall.
15. The method of claim 11 , wherein the side wall is fabricated at least in part by one of lithography, lift off, moulding or shadow masking.
16. The method of claim 11 , wherein the at least one material layer is part of an organic light emitting diode structure.
17. The method of claim 11 , wherein the material structure comprises at least one of a silicon-nitride dielectric layer and a polymer dielectric layer.
18. The method of claim 11 , wherein the material structure comprises at least one layer, and wherein the at least one layer of the material structure is fabricated at least partly via, and the first conductive layer, the second conductive layer, and the at least one material layer are deposited via, at least one of PECVD, CVD, sputtering, vapor deposition, printing, spin coating, and spray coating.
19. The method of claim 11 , wherein the first portion of the side wall comprises a lower portion of the side wall and the second portion of the side wall comprises a portion of the side wall between the lower portion of the side wall and the top surface.
20. The method of claim 11 , wherein the at least one material layer comprises at least one of a semiconductor layer and a dielectric layer.
21. A device structure comprising:
a material structure including a top surface and a side wall integral with and joining the top surface;
at least one material layer deposited on the material structure, the at least one material layer being continuous on the top surface of the material structure, continuously covering a first portion of the side wall, and having at least one discontinuity on a second portion of the side wall; and
a first conductive layer deposited on the at least one material layer, the first conductive layer in contact with the material structure on the second portion of the side wall and separated from the material structure by the at least one material layer on the first portion of the side wall, the at least one material layer comprising material different from a material of the first conductive layer, wherein the first portion of the side wall comprises a lower portion of the side wall and the second portion of the side wall comprises a portion of the side wall between the lower portion of the side wall and the top surface.
22. A method of fabricating a device structure, the method comprising:
fabricating a material structure including a top surface and a side wall integral with and joining the top surface;
depositing at least one material layer on the material structure, the at least one material layer being continuous on the top surface of the material structure, continuously covering a first portion of the side wall, and having at least one discontinuity on a second portion of the side wall; and
depositing a first conductive layer on the at least one material layer, the first conductive layer in contact with the material structure on the second portion of the side wall and separated from the material structure by the at least one material layer on the first portion of the side wall, the at least one material layer comprising material different from a material of the first conductive layer, wherein the first portion of the side wall comprises a lower portion of the side wall and the second portion of the side wall comprises a portion of the side wall between the lower portion of the side wall and the top surface.