IP Library Granted Patent US 11,216,938
Granted Patent B2
US 11,216,938 · App. 16/554,110 · Granted Jan 4, 2022

Systems and methods of optimal metrology guidance

Inventors: Lingling Pu (San Jose, CA); Wei Fang (Milpitas, CA); Nan Zhao (San Jose, CA); Wentian Zhou (San Jose, CA); Teng Wang (San Jose, CA); Ming Xu (San Jose, CA)
Assignee: ASML Netherlands B.V.
G06T7/001G06T7/60G06T2207/10061G06T2207/30148G06T2207/30168H01L22/12
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Quick Facts
Patent No.
US 11,216,938
App. No.
16/554,110
Granted
Jan 4, 2022
Kind
B2
Abstract

Systems and methods for optimal electron beam metrology guidance are disclosed. According to certain embodiments, the method may include receiving an acquired image of a sample, determining a set of image parameters based on an analysis of the acquired image, determining a set of model parameters based on the set of image parameters, generating a set of simulated images based on the set of model parameters. The method may further comprise performing measurement of critical dimensions on the set of simulated images and comparing critical dimension measurements with the set of model parameters to provide a set of guidance parameters based on comparison of information from the set of simulated images and the set of model parameters. The method may further comprise receiving auxiliary information associated with target parameters including critical dimension uniformity.

Claims (31)

1. A metrology system comprising:

a memory storing a set of instructions; and

a processor configured to execute the set of instructions to cause the metrology system to:

receive an acquired image of a sample;

determine a set of image parameters based on an analysis of the acquired image;

determine a set of model parameters based on the set of image parameters;

generate a set of simulated images based on the set of model parameters; and

output a set of guidance parameters based on an analysis of the set of simulated images and the set of model parameters.

2. The system of claim 1 , further comprising a charged particle beam apparatus configured to acquire an image of the sample.

3. The system of claim 1 , wherein the set of simulated images includes only a single simulated image.

4. The system of claim 1 , wherein the analysis comprises a comparison of information from the set of simulated images and the set of model parameters.

5. The system of claim 4 , wherein the information from the set of simulated images comprises critical dimension measurement results.

6. The system of claim 1 , wherein at least one of the set of image parameters, the set of model parameters, or the set of guidance parameters comprises a single parameter.

7. The system of claim 1 , wherein the set of image parameters comprises any of noise levels, pattern of interest, line roughness, or edge profile.

8. The system of claim 1 , wherein the set of model parameters is determined from the set of image parameters based on a quality metric.

9. The system of claim 8 , wherein the set of model parameters being determined from the set of image parameters is based on a plurality of quality metrics.

10. The system of claim 9 , wherein the plurality of quality metrics comprises any of local noise level, global noise level, edge profile statistics, or pattern structure.

11. The system of claim 1 , wherein the set of guidance parameters comprises any of recommended imaging parameter, critical dimension uniformity parameter, measurement precision, repeatability, or measurement accuracy.

12. The system of claim 1 , wherein the processor is configured to execute the set of instructions to further cause the metrology system to:

receive auxiliary information associated with target parameters; and

analyze the acquired image based on the received auxiliary information.

13. The system of claim 12 , wherein the target parameters comprise any of targeted pitch, targeted critical dimension uniformity, targeted pattern, or targeted measurement precision.

14. The system of claim 1 , wherein the processor is configured to execute the set of instructions to further cause the metrology system to:

perform measurement of a critical dimension of the set of simulated images to obtain critical dimension measurements; and

compare the critical dimension measurements with the set of model parameters.

15. A non-transitory computer readable medium comprising a set of instructions that are executable by one or more processors of an apparatus to cause the apparatus to perform a method comprising:

receiving an acquired image of a sample;

determining a set of image parameters based on an analysis of the acquired image;

determining a set of model parameters based on the set of image parameters;

generating a set of simulated images based on the set of model parameters; and

providing a set of guidance parameters based on an analysis of the set of simulated images and the set of model parameters.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 20, 2021
From: PU, LINGLING; FANG, WEI; ZHAO, NAN; ZHOU, WENTIAN; WANG, TENG; XU, MING
To: HERMES MICROVISION, INC.
Reel/Frame 057848/0300 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 20, 2021
From: HERMES MICROVISION, INC.
To: HERMES MICROVISION INCORPORATED B.V.
Reel/Frame 057848/0841 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 20, 2021
From: HERMES MICROVISION INCORPORATED B.V.
To: ASML NETHERLANDS B.V.
Reel/Frame 057849/0047 →
Continuity (2)
Provisional Application 62723983 · Aug 28, 2018
Related Publication 20200074610A1 · Mar 5, 2020
Cited By (1)
US 12,248,742