Method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus
Described herein is a technique capable of suppressing deposits. According to one aspect of the technique, there is provided a method including: (a) supplying a source gas into a process chamber through a source gas nozzle while heating the process chamber; and (b) supplying a reactive gas into the process chamber, wherein (a) and (b) are alternately performed one by one to form a film on the plurality of the substrates while satisfying conditions including: (i) a supply time of the source gas in (a) in each cycle is 20 seconds or less; (ii) a pressure of the source gas in the source gas nozzle in (a) is 50 Pa or less; (iii) an inner temperature of the process chamber in (a) is 500° C. or less; and (iv) number of cycles performed continuously to form the film on the plurality of the substrates is 100 cycles or less.
1. A method of manufacturing a semiconductor device comprising:
(a) supplying a source gas into a process chamber through a source gas nozzle while heating the process chamber in which a plurality of substrates is stacked, wherein the source gas nozzle extends along a stacking direction of the plurality of the substrates and is provided with a plurality of gas supply holes opened at positions corresponding to a stacking region of the plurality of the substrates; and
(b) supplying a reactive gas capable of reacting with the source gas into the process chamber,
wherein a cycle, in which (a) and (b) are alternately performed one by one, is performed once or more to form a film on the plurality of the substrates while satisfying conditions comprising:
(i) a supply time of the source gas in (a) in each cycle is 20 seconds or less;
(ii) a pressure of the source gas in the source gas nozzle in (a) is 50 Pa or less;
(iii) an inner temperature of the process chamber in (a) is 500° C. or less; and
(iv) number of cycles performed continuously to form the film on the plurality of the substrates is 100 cycles or less.
2. The method of claim 1 , wherein the reactive gas is supplied into the source gas nozzle after (a) is performed so that an inner wall of the source gas nozzle is pre-coated.
3. The method of claim 2 , wherein a flow rate of the reactive gas is 30 slm or less.
4. The method of claim 1 , wherein an inert gas is supplied into the source gas nozzle, and the reactive gas supplied into the process chamber flows backward into the source gas nozzle through the plurality of the gas supply holes of the source gas nozzle in (b).
5. The method of claim 4 , wherein a ratio of a flow rate of the inert gas supplied into the source gas nozzle to a flow rate of the reactive gas flowing backward into the source gas nozzle is adjusted in (b).
6. The method of claim 1 , wherein the reactive gas supplied into the process chamber flows backward into the source gas nozzle by stopping the supplying of the inert gas into the source gas nozzle in (b).
7. The method of claim 1 , wherein an inert gas is supplied into the source gas nozzle in (b), and a flow rate of the inert gas supplied into the source gas nozzle is lower than a flow rate of the reactive gas flowing backward into the source gas nozzle in (b).
8. The method of claim 1 , wherein the supply time of the source gas in (a) in each cycle is 2 seconds or more, the pressure of the source gas in the source gas nozzle in (a) is 10 Pa or more, the inner temperature of the process chamber in (a) is 400° C. or more, and the number of the cycles performed continuously to form the film on the plurality of the substrates is one or more.
9. The method of claim 1 , wherein the source gas comprises a metal-containing gas and the reactive gas comprises an oxygen-containing gas.