Film bulk acoustic resonator having suppressed lateral mode
Film bulk acoustic resonator having suppressed lateral mode. In some embodiments, a film bulk acoustic resonator can include a piezoelectric layer having a first side and a second side, a first electrode having a first lateral shape implemented on the first side of the piezoelectric layer, and a second electrode having a second lateral shape implemented on the second side of the piezoelectric layer. The first and second lateral shapes can be selected and arranged to provide a resonator shape defined by an outline of an overlap of the first and second electrodes. The resonator shape can include N curved sections joined by N vertices of an N-sided polygon. The resonator shape can be configured to have no axis of symmetry.
1. A bulk acoustic resonator comprising:
a piezoelectric layer having a first side and a second side; and
a first electrode having a first lateral shape implemented on the first side of the piezoelectric layer; and
a second electrode having a second lateral shape implemented on the second side of the piezoelectric layer, the first and second lateral shapes selected and arranged to provide a resonator shape defined by an outline of an overlap of the first and second electrodes, the resonator shape including N smooth curves joined by N vertices of an N-sided polygon having an inside, each vertex joining two neighboring smooth curves such that the two neighboring smooth curves combined is not a smooth curve due to the respective vertex, each smooth curve having a concave shape with respect to the inside of the N-sided polygon, the resonator shape configured to have no axis of symmetry.
2. The bulk acoustic resonator of claim 1 wherein the quantity N of the number of vertices is an integer greater or equal to 4.
3. The bulk acoustic resonator of claim 2 wherein the quantity N of the number of vertices is equal to 5.
4. The bulk acoustic resonator of claim 1 wherein each of the N vertices is a sharp point between the respective neighboring smooth curves.
5. The bulk acoustic resonator of claim 1 wherein each of the N smooth curves is a part of an ellipse.
6. The bulk acoustic resonator of claim 5 wherein at least two of the N smooth curves are parts of one ellipse.
7. The bulk acoustic resonator of claim 5 wherein the N smooth curves are parts of N respective ellipses.
8. The bulk acoustic resonator of claim 1 wherein the bulk acoustic resonator is a film bulk acoustic resonator.
9. The bulk acoustic resonator of claim 1 wherein neither of the first and second lateral shape has the same lateral shape as the resonator shape.
10. The bulk acoustic resonator of claim 1 wherein at least one of the first and second lateral shape is configured to have substantially the same lateral shape as the resonator shape.
11. The bulk acoustic resonator of claim 10 wherein one of the first and second lateral shape is configured to have substantially the same lateral shape as the resonator shape, and the other lateral shape is configured to have a larger area to thereby include a non-overlapping portion.
12. The bulk acoustic resonator of claim 10 wherein each of the first and second lateral shape is configured to have substantially the same lateral shape as the resonator shape.
13. A film bulk acoustic resonator device comprising:
a substrate;
first and second electrodes implemented over the substrate; and
a piezoelectric layer implemented between the first and second electrodes that are configured to provide a resonator shape defined by an outline of an overlap of the first and second electrodes, the resonator shape including N smooth curves joined by N vertices of an N-sided polygon having an inside, each vertex joining two neighboring smooth curves such that the two neighboring smooth curves combined is not a smooth curve due to the respective vertex, each smooth curve having a concave shape with respect to the inside of the N-sided polygon, the resonator shape configured to have no axis of symmetry.
14. The film bulk acoustic resonator device of claim 13 wherein the film bulk acoustic resonator device is a radio-frequency filter.
15. A packaged module comprising:
a packaging substrate configured to receive a plurality of components; and
a film bulk acoustic resonator device implemented on the packaging substrate, the film bulk acoustic resonator device including a substrate, and first and second electrodes implemented over the substrate, the film bulk acoustic resonator device further including a piezoelectric layer implemented between the first and second electrodes that are configured to provide a resonator shape defined by an outline of an overlap of the first and second electrodes, the resonator shape including N smooth curves joined by N vertices of an N-sided polygon having an inside, each vertex joining two neighboring smooth curves such that the two neighboring smooth curves combined is not a smooth curve due to the respective vertex, each smooth curve having a concave shape with respect to the inside of the N-sided polygon, the resonator shape configured to have no axis of symmetry.
16. The packaged module of claim 15 wherein the packaged module is a front-end module configured to support wireless operations involving radio-frequency signals.
17. The packaged module of claim 16 wherein the front-end module is configured to provide cellular communication functionality.