Integrated fan-out device, 3D-IC system, and method
A three dimensional integrated circuit (3D-IC) module socket system includes an integrated Fan-Out (InFO) adapter having one or more integrated passive devices (IPDs) embedded in the InFO adapter. The InFO adapter is also integrated into the 3D-IC module socket system by stacking the InFO adapter between a socket and a SoW package. The InFO adapter with embedded IPDs allows for more planar area of the SoW package to be available for interfacing the socket and provides a short distance between the embedded IPDs and computing dies of the SoW package which enhances a power distribution network (PDN) performance and improves current handling of the 3D-IC module socket system.
1. A device, comprising:
a first redistribution layer;
a second redistribution layer;
an integrated passive device disposed between the first redistribution layer and the second redistribution layer, a contact pad of the integrated passive device being connected to the first redistribution layer;
conductive vias physically connecting the first redistribution layer to the second redistribution layer, wherein the integrated passive device is disposed between the conductive vias;
first external connectors bonded to the first redistribution layer; and
second external connectors bonded to the second redistribution layer, wherein the first external connectors are bonded to external contacts of a system on wafer package, and wherein the second external connectors are bonded to external contacts of a socket.
2. The device of claim 1 , further comprising an encapsulant, wherein the conductive vias and the integrated passive device are embedded in the encapsulant.
3. The device of claim 1 , further comprising an organic core substrate, wherein the conductive vias and the integrated passive device are embedded in the organic core substrate.
4. The device of claim 1 , wherein the integrated passive device comprises a plurality of passive devices.
5. The device of claim 4 , wherein the plurality of passive devices occupies at least 50% of a surface area of the first redistribution layer.
6. A system, comprising:
a system on wafer package;
a socket; and
an integrated fan-out adapter disposed between and separating the socket and the system on wafer package, the integrated fan-out adapter comprising:
a first redistribution layer and a second redistribution layer;
an integrated passive device disposed between the first redistribution layer and the second redistribution layer, the integrated passive device being connected to the first redistribution layer; and
conductive vias connecting the first redistribution layer to the second redistribution layer and connecting the socket to the system on wafer package.
7. The system of claim 6 , wherein the system on wafer package comprises a computing die and wherein the integrated fan-out adapter is disposed over the computing die.
8. The system of claim 7 , wherein the system on wafer package comprises a connecting die disposed in a connecting region of the system on wafer package.
9. The system of claim 8 , further comprising an encapsulant, the integrated passive device and the conductive vias being embedded in the encapsulant.
10. The system of claim 9 , wherein the integrated fan-out adapter further comprises at least one other device disposed between the first and second redistribution layers, connected to the first redistribution layer, and embedded in the encapsulant.
11. The system of claim 10 , wherein the integrated passive device and all other integrated passive devices of the at least one other device occupy at least fifty percent of an area defined between the first and second redistribution layers.
12. A device, comprising:
a first metallization layer;
conductive vias to the first metallization layer;
an integrated passive device over the first metallization layer;
a second metallization layer over the conductive vias and over the integrated passive device, the second metallization layer being connected to the conductive vias and the integrated passive device;
first external contacts adjacent to the second metallization layer; and
second external contacts adjacent to the first metallization layer wherein the first external contacts are bonded to external contacts of a system on wafer package, and wherein the second external contacts are bonded to external contacts of a socket.
13. The device of claim 12 , wherein an external system connector is bonded to external contacts of the system on wafer package.
14. The device of claim 13 , wherein an integrated circuit package is connected to the socket.
15. The device of claim 13 , wherein the conductive vias and the integrated passive device are encapsulated within an encapsulant.
16. The device of claim 13 , wherein the integrated passive device is one of a plurality of integrated passive devices, and wherein the plurality of integrated passive devices are the only devices placed over the first metallization layer prior to the depositing the second metallization layer.
17. The device of claim 13 , wherein the integrated passive device is one of a plurality of integrated passive devices and wherein the plurality of integrated passive devices takes up at least 50% of a surface area of the first metallization layer.
18. The device of claim 1 , wherein the system on wafer package comprises a connecting die disposed in a connecting region of the system on wafer package.
19. The device of claim 6 , wherein the integrated passive device comprises a plurality of passive devices.
20. The system of claim 12 , wherein the system on wafer package comprises a connecting die disposed in a connecting region of the system on wafer package.