Semiconductor memory device
According to one embodiment, a semiconductor memory device includes a base layer, conductive layers, an insulation layer, a semiconductor layer and a charge storage layer. The conductive layers are stacked above the base layer in a first direction. The insulation layer is extending in the conductive layers in the first direction. The semiconductor layer is arranged between the insulation layer and the conductive layers. The charge storage layer is arranged between the semiconductor layer and the conductive layers. The insulation layer includes a first insulation layer arranged on a side of the base layer and containing polysilazane and a second insulation layer arranged on the first insulation layer on a side opposite from the base layer.
1. A semiconductor memory device comprising:
a base layer;
a plurality of conductive layers stacked above the base layer in a first direction;
an insulation layer extending in the plurality of conductive layers in the first direction;
a semiconductor layer arranged between the insulation layer and the plurality of conductive layers; and
a charge storage layer arranged between the semiconductor layer and the plurality of conductive layers,
wherein the insulation layer comprises:
a first insulation layer containing polysilazane; and
a second insulation layer that is arranged on the first insulation layer and is far from the base layer than the first insulation layer, and
wherein a lower end of the second insulation layer is located higher than an upper end of a lowermost conductive layer of the plurality of conductive layers in the first direction;
wherein a lower end of the charge storage layer is located at a first height between a second height of the lowermost conductive layer of the plurality of conductive layers and a third height of the base layer in the first direction.
2. The semiconductor memory device according to claim 1 , wherein
an upper end of the first insulation layer is located higher than the upper end of the lowermost conductive layer of the plurality of conductive layers in the first direction.
3. The semiconductor memory device according to claim 1 , wherein
an upper end of the first insulation layer is located higher, in a direction away from the base layer, than the lower end of the charge storage layer.
4. The semiconductor memory device according to claim 1 , wherein
the second insulation layer includes an air gap.
5. The semiconductor memory device according to claim 4 , wherein
a lower end of the air gap included in the second insulation layer is located higher than a lower end of the charge storage layer in the first direction.
6. The semiconductor memory device according to claim 1 , wherein
the first insulation layer includes nitrogen (N).
7. The semiconductor memory device according to claim 1 , wherein
the first insulation layer includes a spin-on glass layer.
8. The semiconductor memory device according to claim 1 , wherein
the semiconductor layer includes intersections with the plurality of conductive layers, the intersections functioning as memory cell transistors.
9. The semiconductor memory device according to claim 8 , wherein
the plurality of conductive layers function as gates of the memory cell transistors and word lines coupled to the gates.
10. A semiconductor memory device comprising:
a substrate;
a plurality of conductive layers stacked on the substrate in a first direction;
a first insulation layer extending in the plurality of conductive layers in the first direction;
a second insulation layer extending in the plurality of conductive layers in the first direction, the first insulation layer arranged between the substrate and the second insulation layer;
a semiconductor layer arranged between the first insulation layer and the plurality of conductive layers and between the second insulation layer and the plurality of conductive layers; and
a third insulation layer arranged between the semiconductor layer and the plurality of conductive layers,
wherein the first insulation layer includes polysilazane, and the second insulation layer does not include polysilazane, and
wherein a lower end of the second insulation layer is located higher than an upper end of a lowermost conductive layer of the plurality of conductive layers in the first direction;
wherein the third insulation layer functions as a charge storage layer, and includes a first portion extending in the first direction and a second portion bent in a direction parallel to the substrate at a position between the lowermost conductive layer of the plurality of conductive layers and the substrate.
11. The semiconductor memory device according to claim 10 , wherein
an upper end of the first insulation layer is located higher, in a direction away from the substrate, than the upper end of the lowermost conductive layer of the plurality of conductive layers.
12. The semiconductor memory device according to claim 10 , wherein
an upper end of the first insulation layer is located higher, in a direction away from the base layer, than the second portion of the third insulation layer.
13. The semiconductor memory device according to claim 10 , wherein
the second insulation layer includes an air gap.
14. The semiconductor memory device according to claim 10 , wherein
the second insulation layer includes an air gap, and a lower end of the air gap is located higher than the second portion of the third insulation layer.
15. The semiconductor memory device according to claim 10 , wherein
the first insulation layer includes nitrogen (N).
16. The semiconductor memory device according to claim 10 , wherein
the first insulation layer includes a spin-on glass layer.
17. The semiconductor memory device according to claim 10 , wherein
the semiconductor layer includes intersections with the plurality of conductive layers, the intersections functioning as memory cell transistors.
18. The semiconductor memory device according to claim 17 , wherein
the plurality of conductive layers function as gates of the memory cell transistors and word lines coupled to the gates.