Substrate processing apparatus

1. A substrate processing apparatus comprising: a chamber in which a target substrate is accommodated; a controller configured to control:

(i). first gas supply part configured to supply a gas containing a first monomer, and a gas containing a second monomer, which forms a polymer through a polymerization reaction with the first monomer, into the chamber so as to form a film of the polymer on the target substrate;

(ii). a second gas supply part configured to supply an inert gas into the first exhaust pipe between the chamber and an energy supply device; an exhaust device configured to exhaust a gas inside the chamber; a first exhaust pipe configured to connect the chamber and the exhaust device; the energy supply device configured to supply an energy with respect to a gas flowing through the first exhaust pipe so as to cause an unreacted component of at least one of the first monomer and the second monomer contained in the gas exhausted from the chamber to be reduced in a molecular weight; a second exhaust pipe configured to connect the chamber and the exhaust device; a first valve provided in the first exhaust pipe between the energy supply device and the exhaust device; a second valve provided in the second exhaust pipe; and

(iii). a third gas supply part configured to supply a gas source of an oxygen-containing gas; and a supply pipe that is installed to connect the gas source to a portion of the first exhaust pipe between the energy supply device and the first valve to supply the oxygen-containing gas into the first exhaust pipe between the energy supply device and the first valve;

(iv). the energy supply device supplying the energy with respect to the gas flowing through the first exhaust pipe using a plasma generated by supplying a high-frequency power to the gas flowing through the first exhaust pipe, so as to cause the unreacted component of the at least one of the first monomer and the second monomer contained in the gas exhausted from the chamber to be reduced in the molecular weight, wherein, when the film of the polymer is formed on the target substrate, the first valve is kept in an opened state and the second valve is kept in a closed state, so that the gas flowing from the chamber to the exhaust device through the first exhaust pipe is irradiated with the plasma generated by the energy supply device;

(v.) a cleaning process for the interior of the chamber, wherein the first valve is kept in the closed state and the second valve is kept in the opened state, so that the oxygen-containing gas supplied from the third gas supply part is formed into a plasma by the energy supply device, the cleaning process for the interior of the chamber subjected to active species contained in the plasma.

2. The substrate processing apparatus of claim 1 , further comprising: a second gas supply part configured to supply an inert gas into the first exhaust pipe between the chamber and the energy supply device.

3. The substrate processing apparatus of claim 1 , wherein the oxygen-containing gas contains an O 2 gas or an O 3 gas.

4. A substrate processing apparatus comprising: a chamber in which a target substrate is accommodated; a controller configured to control:

(i). a first gas supply part configured to supply a gas containing a first monomer, and a gas containing a second monomer, which forms a polymer through a polymerization reaction with the first monomer, into the chamber so as to form a film of the polymer on the target substrate;

(ii). a second gas supply part configured to supply an inert gas into the first exhaust pipe between the chamber and an energy supply device; an exhaust device configured to exhaust a gas inside the chamber; a first exhaust pipe configured to connect the chamber and the exhaust device, the energy supply device configured to supply an energy with respect to a gas flowing through the first exhaust pipe so as to cause an unreacted component of at least one of the first monomer and the second monomer contained in the gas exhausted from the chamber to be reduced in a molecular weight; a second exhaust pipe configured to connect the chamber and the exhaust device; a first valve provided in the first exhaust pipe between the energy supply device and the exhaust device; a second valve provided in the second exhaust pipe;

(iii). a third gas supply part including: a gas source that supplies an oxygen-containing gas; and a supply pipe that is installed to connect the gas source to a portion of the first exhaust pipe between the energy supply device and the first valve to supply the oxygen-containing gas into the first exhaust pipe between the energy supply device and the first valve;

(iv). the energy supply device supplies the energy with respect to the gas flowing through the first exhaust pipe by irradiating the gas flowing through the first exhaust pipe with ultraviolet rays, so as to cause the unreacted component of the at least one of the first monomer and the second monomer contained in the gas exhausted from the chamber to be reduced in the molecular weight, wherein, when the film of the polymer is formed on the target substrate, the first valve is kept in an opened state and the second valve is kept in a closed state, so that the gas flowing from the chamber to the exhaust device through the first exhaust pipe is irradiated with the ultraviolet rays from the energy supply device, and;

(v). a cleaning process for the interior of the chamber, wherein the first valve is kept in the closed state and the second valve is kept in the opened state, so that the cleaning process for the interior of the chamber is subjected to active species generated when the oxygen-containing gas supplied from the third gas supply part is irradiated with the ultraviolet rays from the energy supply device.