PLASMA PROCESSING DEVICE
A plasma processing device in which plasma processing uniformity is improved up to an outer peripheral portion of a wafer and the number of non-defective devices that can be manufactured from one wafer is increased. The plasma processing device includes a vacuum container; a mounting table, a susceptor ring that covers an outer peripheral portion of an electrode base material, and an insulation ring covered by the susceptor ring and surrounding the electrode base material, and thin film electrode formed on an upper surface and a part of a surface facing the outer periphery of the electrode base material; a first high frequency power applied to the electrode base material a second high frequency power applied to the thin film electrode; a plasma generating unit that generates plasma on an upper portion of the mounting table inside the vacuum container; and a control unit.
1 . A plasma processing device, comprising:
a vacuum container;
a mounting table that includes an electrode base material where a sample subject to processing is mounted inside the vacuum container, a susceptor ring that is formed of an insulating material that covers an outer peripheral portion of the electrode base material, and an insulation ring that is covered by the susceptor ring, is disposed to surround an outer periphery of the electrode base material, and has a thin film electrode formed on an upper surface and a part of a surface facing the outer periphery of the electrode base material;
a first high frequency power applying unit that applies a first high frequency power to the electrode base material of the mounting table;
a second high frequency power applying unit that applies a second high frequency power to the thin film electrode formed on the insulation ring;
a plasma generating unit that generates plasma on an upper portion of the mounting table inside the vacuum container; and
a control unit that controls the first high frequency power applying unit, the second high frequency power applying unit, and the plasma generating unit.
2 . The plasma processing device according to claim 1 , wherein
a surface of the thin film electrode is covered with a dielectric film.
3 . The plasma processing device according to claim 2 , wherein
the thin film electrode is formed of a tungsten film, and the dielectric film is formed of alumina.
4 . The plasma processing device according to claim 3 , wherein
the tungsten film of the thin film electrode is formed by spraying tungsten onto a surface of the insulation ring.
5 . The plasma processing device according to claim 3 , wherein
an alumina film that covers the surface of the thin film electrode is formed by spraying alumina to cover a portion of the insulation ring where the tungsten film is formed.
6 . The plasma processing device according to claim 1 , wherein
in portions where the thin film electrode of the insulation ring is formed, a portion where an upper surface of the insulation ring intersects the surface facing the outer periphery of the electrode base material is connected by a rounded surface.
7 . The plasma processing device according to claim 1 , wherein
the mounting table has a stepped shape in which a peripheral portion is recessed with respect to a central portion, and the insulation ring is covered by the susceptor ring in a state of being mounted on a step-shaped portion where the peripheral portion of the mounting table is recessed.
8 . The plasma processing device according to claim 1 , wherein
the plasma generating unit includes:
a dielectric window that is provided on an upper portion of the vacuum container and opposite to the mounting table and is formed of a dielectric material;
a power supply unit that supplies high frequency power from the upper portion of the vacuum container to an inside of the vacuum container via the dielectric window; and
a magnetic field generating unit that is provided outside the vacuum container and generates a magnetic field inside the vacuum container.