Pattern forming material, composition for pattern formation, pattern forming method and method of manufacturing semiconductor device
According to one embodiment, a pattern forming material is disclosed. The pattern forming material contains a polymer. The polymer includes a specific first monomer unit. The monomer unit has a structure having ester of a carboxyl group at a terminal of a side chain. In the ester, a carbon atom bonded to an oxygen atom next to a carbonyl group is a primary carbon, a secondary carbon or a tertiary carbon. The pattern forming material is used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film is formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film.
1. A pattern forming material comprising:
a polymer including a first monomer unit represented by a following general formula (1),
the pattern forming material being used for manufacturing a composite film as a mask pattern for processing a target film on a substrate,
the composite film being formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film after patterning the organic film,
wherein, R1, R2 and R3 each independently represent a hydrogen atom or a hydrocarbon group which may have an oxygen atom, at least one of R1, R2 and R3 is a hydrocarbon group, a total number of carbon atoms of R1, R2 and R3 is 1 to 13, and R1, R2 and R3 may be bonded to each other to form a ring, R4 is a hydrogen atom or a methyl group, and R5 is a single bond, or a hydrocarbon group which has 1 to 20 carbon atoms and may have an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms or at a bond terminal, and a hydrogen atom thereof may be substituted by a halogen atom.
2. The pattern forming material according to claim 1 , wherein one or two of R1, R2 and R3 are hydrogen atoms in the general formula (1).
3. The pattern forming material according to claim 1 , wherein R5 in the general formula (1) contains an aromatic ring.
4. The pattern forming material according to claim 1 , wherein a molar ratio of the first monomer unit to all monomer units in the polymer is 50 mol % or more.
5. The pattern forming material according to claim 1 , wherein the polymer further includes a second monomer unit having a crosslinkable functional group at a terminal of a side chain.
6. The pattern forming material according to claim 5 , wherein a molar ratio of the second monomer unit to all monomer units in the polymer is 0.5 mol % or more and less than 20 mol %.
7. The pattern forming material according to claim 5 , further containing a curing agent having reactivity with the crosslinkable functional group.
8. A composition for pattern formation containing the pattern forming material according to claim 1 and an organic solvent capable of dissolving the pattern forming material.
9. The pattern forming material according to claim 1 , wherein the polymer includes a linear polymer.
10. A pattern forming method comprising:
forming an organic film on a substrate with a pattern forming material;
patterning the organic film; and
forming a composite film by infiltering a metal compound into the patterned organic film after patterning the organic film to obtain a mask pattern composed of the composite film, wherein
the pattern forming material contains a polymer including a first monomer unit represented by a following general formula (1),
wherein, R1, R2 and R3 each independently represent a hydrogen atom or a hydrocarbon group which may have an oxygen atom, at least one of R1, R2 and R3 is a hydrocarbon group, a total number of carbon atoms of R1, R2 and R3 is 1 to 13, and R1, R2 and R3 may be bonded to each other to form a ring, R4 is a hydrogen atom or a methyl group, and R5 is a single bond, or a hydrocarbon group which has 1 to 20 carbon atoms and may have an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms or at a bond terminal, and a hydrogen atom thereof may be substituted by a halogen atom.
11. The method according to claim 10 , wherein one or two of R1, R2 and R3 are hydrogen atoms in the general formula (1).
12. The method according to claim 10 , wherein R5 in the general formula (1) contains an aromatic ring.
13. The method according to claim 10 , wherein a molar ratio of the first monomer unit to all monomer units in the polymer is 50 mol % or more.
14. The method according to claim 10 , wherein the polymer further includes a second monomer unit having a crosslinkable functional group at a terminal of a side chain.
15. The method according to claim 14 , wherein a molar ratio of the second monomer unit to all monomer units in the polymer is 0.5 mol % or more and less than 20 mol %.
16. The method according to claim 14 , wherein the pattern forming material further contains a curing agent having reactivity with the crosslinkable functional group.
17. The method according to claim 10 , wherein the polymer includes a linear polymer.
18. A method of manufacturing a semiconductor device, comprising:
forming an organic film on a target film on a semiconductor substrate with a pattern forming material;
patterning the organic film,
forming a mask pattern composed of a composite film by infiltering a metal compound into the patterned organic film after patterning the organic film; and
processing the target film by using the mask pattern, wherein
the pattern forming material contains a polymer including a first monomer unit represented by a following general formula (1),
wherein, R1, R2 and R3 each independently represent a hydrogen atom or a hydrocarbon group which may have an oxygen atom, at least one of R1, R2 and R3 is a hydrocarbon group, a total number of carbon atoms of R1, R2 and R3 is 1 to 13, and R1, R2 and R3 may be bonded to each other to form a ring, R4 is a hydrogen atom or a methyl group, and R5 is a single bond, or a hydrocarbon group which has 1 to 20 carbon atoms and may have an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms or at a bond terminal, and a hydrogen atom thereof may be substituted by a halogen atom.
19. The method according to claim 18 , wherein one or two of R1, R2 and R3 are hydrogen atoms in the general formula (1).
20. The method according to claim 18 , wherein R5 in the general formula (1) contains an aromatic ring.
21. The method according to claim 18 , wherein the polymer further includes a second monomer unit having a crosslinkable functional group at a terminal of a side chain.
22. The method according to claim 21 , wherein the pattern forming material further contains a curing agent having reactivity with the crosslinkable functional group.
23. The method according to claim 18 , wherein the polymer includes a linear polymer.