Plasma processing apparatus
In a plasma processing apparatus, an additional viewing window is disposed between an infrared temperature sensor and a view window, and the additional viewing window is cooled to be retained at room temperature (20° C. to 25° C.), to reduce and to stabilize electromagnetic waves emitted from the viewing window. By correcting the value of the electromagnetic waves, the measurement precision of the temperature monitor is increased and it is possible to measure and to control the dielectric window temperature in a stable state.
1. A plasma processing apparatus, comprising:
a processing chamber disposed in a vacuum container;
gas supply means for supplying gas to the processing chamber;
a sample stage which is disposed in the processing chamber and on which a sample to be processed is mounted;
a planar member comprising a dielectric material which is disposed above the processing chamber to cover the processing chamber and through which an electric field supplied to form plasma in the processing chamber passes;
an electric field supply path disposed outside the processing chamber for supplying the electric field to the planar member;
a magnetic field generating coil disposed outside the processing chamber;
an infrared sensor disposed on an upper end of a support stage outside the planar member apart therefrom for receiving an infrared ray emitted from the planar member and for thereby detecting temperature of the planar member;
a first window member disposed between the planar member and the infrared sensor; and
a second window member disposed between the planar member and the infrared sensor to be spaced apart from the first window member,
the first and second window members comprising one and the same material, wherein:
temperature of the second window member is in a predetermined range; and
at reception of the infrared ray having passed through the first and second window members, the infrared sensor detects the temperature of the planar member,
wherein the support stage is constructed such that said infrared sensor is disposed on said support stage at a position located a distance from an upper surface of the magnetic field generating coil such that a magnetic flux density at said infrared sensor generated by the magnetic field generating coil is equal to or less than one-tenth of a magnetic flux density in the magnetic field generating coil.
2. The plasma processing apparatus according to claim 1 , wherein
the temperature of the planar member is detected by correcting an output obtained from the infrared sensor according to the temperature of the second window member.
3. The plasma processing apparatus according to claim 2 , wherein
the temperature of the planar member is adjusted according to a condition of processing on the sample.
4. The plasma processing apparatus according to claim 1 , wherein
the temperature of the planar member is adjusted according to a condition of processing on the sample.
5. The plasma processing apparatus according to claim 1 , wherein said first and second window members are both constructed using a material including calcium fluoride.
6. The plasma processing apparatus according to claim 5 , wherein said first and second window members both have a thickness of 3 mm.