Semiconductor device with integrated heat distribution and manufacturing method thereof

1. A semiconductor package, comprising:

a first semiconductor device comprising:

a first substrate;

a first semiconductor component comprising a top surface, a bottom surface, and a side surface between the top surface of the first semiconductor component and the bottom surface of the first semiconductor component, wherein the bottom surface of the first semiconductor component is coupled to a top surface of the first substrate; and

an internal heat distribution layer on and thermally coupled to a top surface of the first semiconductor component, the internal heat distribution layer extending to at least the side surface of the first semiconductor component;

a second semiconductor device comprising a second semiconductor component, wherein the second semiconductor device is stacked on a top surface of the first semiconductor device; and

an external heat distribution layer that:

covers an external surface of the second semiconductor device;

traverses along the side surface of the first semiconductor component; and

contacts a side surface of the internal heat distribution layer at a location adjacent the side surface of the first semiconductor component.

2. The semiconductor package of claim 1 , further comprising fins projecting from the external heat distribution layer.

3. The semiconductor package of claim 1 , further comprising:

a second substrate along the top surface of the first semiconductor device; and

internal electrical interconnect structures that couple the first substrate to the second substrate.

4. The semiconductor package of claim 3 , wherein the second semiconductor device is stacked on and coupled to the second substrate.

5. The semiconductor package of claim 1 , further comprising:

internal electrical interconnect structures, wherein each internal electrical interconnect structure comprises an upper surface and a lower surface;

the lower surfaces of the internal electrical interconnect structures are coupled the first substrate; and

the second semiconductor device is coupled to the upper surfaces of the internal electrical interconnect structures.

6. The semiconductor package of claim 1 , wherein:

the first semiconductor device comprises another first semiconductor component that is coupled to the first substrate; and

internal electrical interconnect structures that pass between adjacent sides of the first semiconductor components and couple the second semiconductor device to the first substrate.

7. The semiconductor package of claim 6 , further comprising an encapsulant material that encapsulates the first semiconductor components, the internal electrical interconnect structures, and the top surface of the first substrate.

8. The semiconductor package of claim 1 , wherein the first substrate comprises a laminate substrate.

9. The semiconductor package of claim 1 , wherein the external heat distribution layer contacts the side surface of the first semiconductor component.

10. A semiconductor package, comprising:

a first semiconductor device comprising:

a first substrate;

a first semiconductor component comprising a bottom surface that is coupled to a top surface of the first substrate; and

an internal electro-magnetic-interference (EMI) shield layer on a top surface of the first semiconductor component, the internal EMI shield layer extending to a side surface of the first semiconductor device;

a second semiconductor device comprising a second semiconductor component, wherein the second semiconductor device is stacked on a top surface of the first semiconductor device; and

an external EMI shield layer that:

covers an external surface of the second semiconductor device, the side surface of the first semiconductor device, and a side surface of the internal EMI shield layer; and

contacts the side surface of the internal EMI shield layer along the side surface of the first semiconductor device,

wherein the first semiconductor device comprises another first semiconductor component that is coupled to the first substrate;

wherein internal electrical interconnect structures pass between adjacent sides of the first semiconductor components; and

the second semiconductor device is coupled to the first substrate via the internal electrical interconnect structures.

11. The semiconductor package of claim 10 , further comprising:

a second substrate along the top surface of the first semiconductor device; and

wherein the first substrate is coupled to the second substrate via the internal electrical interconnect structures.

12. The semiconductor package of claim 11 , wherein the second semiconductor device is coupled to the first substrate via the second substrate and the internal electrical interconnect structures.

13. The semiconductor package of claim 10 , wherein:

each internal electrical interconnect structure comprises an upper surface and a lower surface;

the lower surfaces of the internal electrical interconnect structures are coupled the first substrate; and

the second semiconductor device is coupled to the upper surfaces of the internal electrical interconnect structures.

14. The semiconductor package of claim 10 , further comprising an encapsulant material that encapsulates the first semiconductor components, the internal electrical interconnect structures, and the top surface of the first substrate.

15. The semiconductor package of claim 10 , wherein the first substrate comprises a laminate substrate.

16. The semiconductor package of claim 10 , wherein:

the external surface of the second semiconductor device comprises a top side, a bottom side opposite the top side, and sidewalls joining the top side to the bottom side; and

the external EMI shield layer covers the top side and the sidewalls of the external surface of the second semiconductor device.

17. A method comprising:

providing a first semiconductor device comprising:

a first substrate;

a first semiconductor component comprising a bottom surface that is coupled to a top surface of the first substrate;

another first semiconductor component that is coupled to the first substrate; and

an internal heat distribution layer on and thermally coupled to a top surface of the first semiconductor component, the internal heat distribution layer extending to a side surface of the first semiconductor device;

forming internal electrical interconnect structures that pass between adjacent sides of the first semiconductor component and the another first semiconductor component;

stacking, on a top surface of the first semiconductor device, a second semiconductor device comprising a second semiconductor component, wherein stacking the second semiconductor device on the top surface of the first semiconductor device comprises coupling the second semiconductor device to the first substrate via the internal electrical interconnect structures; and

covering an external surface of the second semiconductor device, the side surface of the first semiconductor device, and a side surface of the internal heat distribution layer with an external heat distribution layer such that the external heat distribution layer contacts the side surface of the internal heat distribution layer along the side surface of the first semiconductor device.

18. The method of claim 17 , wherein covering the external surface with the external heat distribution layer comprises forming fins that project from the external heat distribution layer.

19. The method of claim 17 , further comprising:

coupling a second substrate along the top surface of the first semiconductor device to the internal electrical interconnect structures; and

wherein stacking the second semiconductor device on the top surface of the first semiconductor device comprises coupling the second semiconductor device to the second substrate.

20. The method of claim 17 , wherein:

forming the internal electrical interconnect structures comprises coupling a lower surface of each of the internal electrical interconnect structures to the first substrate; and

stacking the second semiconductor device on the top surface of the first semiconductor device comprises coupling the second semiconductor device to an upper surface of each of the internal electrical interconnect structures.