Micromachined thermistor
A micromachined apparatus includes micromachined thermistor having first and second ends physically and thermally coupled to a substrate via first and second anchor structures to enable a temperature-dependent resistance of the micromachined thermistor to vary according to a time-varying temperature of the substrate. The micromachined thermistor has a length, from the first end to the second end, greater than a linear distance between the first and second anchor structures.
1. An integrated circuit device comprising:
a substrate;
a micromachined thermistor;
at least one anchor physically connecting the micromachined thermistor to the substrate, the at least one anchor also providing electrical couplings of the integrated circuit device to the micromachined thermistor, by which an effective resistance of the micromachined thermistor that varies according to temperature is to be detected;
a microelectromechanical system (MEMS) resonator; and
circuitry to generate a clock signal dependent on a resonance frequency of the MEMS resonator;
wherein
the micromachined thermistor has an electrical path length, and the electrical couplings provided by the at least one anchor are in proximity to one another relative to the electrical path length, such that the electrical path length is substantially greater than a linear distance between the electrical couplings, and
the MEMS resonator comprises silicon having first doping characteristics, the micromachined thermistor comprises silicon having second doping characteristics, and the first doping characteristics differ from the second doping characteristics by at least one of dopant concentration and dopant type.
2. The integrated circuit device of claim 1 , wherein the integrated circuit device is designed such that the electrical path length is at least twice the linear distance between the electrical couplings.
3. The integrated circuit device of claim 2 , wherein a path corresponding to the electrical path length is at least one of serpentine, undulating, folded or loop-shaped, relative to the linear distance between the electrical couplings.
4. The integrated circuit device of claim 1 , wherein the electrical couplings provided by the at least one anchor are configured such that variation in the effective resistance associate with change in ambient temperature is substantially independent of mechanical stress experienced by the substrate along a dimensional axis of the linear distance.
5. The integrated circuit device of claim 1 , wherein the micromachined thermistor is fabricated by a process that releases a portion of the micromachined thermistor corresponding to the electrical path length, so as to be free standing and spatially-separated from the substrate.
6. The integrated circuit device of claim 1 , wherein the micromachined thermistor and the electrical couplings each comprise silicon, the silicon of the electrical couplings being heavily doped relative to the silicon of the micromachined thermistor, such that the electrical couplings present less resistance than the micromachined thermistor.
7. The integrated circuit device of claim 1 , wherein the MEMS resonator comprises a resonating body formed of silicon doped with phosphorus.
8. The integrated circuit device of claim 1 , further comprising circuitry to regulate the clock signal dependent on variation of the effective resistance.
9. The integrated circuit device of claim 1 , wherein the silicon of the MEMS resonator is doped with an n-type dopant and the silicon of the micromachined thermistor is doped with a p-type dopant.
10. The integrated circuit device of claim 1 , wherein the micromachined thermistor is encapsulated relative to the substrate.
11. The integrated circuit device of claim 1 , wherein the first doping characteristics and the second doping characteristics differ by dopant concentration.
12. The integrated circuit device of claim 1 , wherein the first doping characteristics and the second doping characteristics differ by each of dopant type and dopant concentration.
13. An integrated circuit device comprising:
a substrate;
a micromachined thermistor;
at least one anchor physically connecting the micromachined thermistor to the substrate, the at least one anchor also providing electrical couplings of the integrated circuit device to the micromachined thermistor, by which an effective resistance of the micromachined thermistor that varies according to temperature is to be detected;
a microelectromechanical system (MEMS) resonator; and
circuitry to generate a clock signal dependent on a resonance frequency of the MEMS resonator;
wherein
the micromachined thermistor has an electrical path length, and the electrical couplings provided by the at least one anchor are in proximity to one another relative to the electrical path length, such that the electrical path length is at least twice as long as a linear distance between the electrical couplings, a path corresponding to the electrical path length being configured such that variation in the effective resistance due to variation in ambient temperature is independent from mechanical stress experienced by the substrate along an dimensional axis of the linear distance, and
the MEMS resonator comprises silicon having first doping characteristics, the micromachined thermistor comprises silicon having second doping characteristics, and the first doping characteristics differ from the second doping characteristics by at least one of dopant concentration and dopant type.
14. The integrated circuit device of claim 13 , wherein the micromachined thermistor is fabricated from the substrate by a process that releases a portion of the micromachined thermistor corresponding to the electrical path length, so as to be free standing and spatially-separated from the substrate.
15. The integrated circuit device of claim 13 wherein the micromachined thermistor comprises silicon and the one or more anchors comprise silicon, the silicon of the one or more anchors being heavily doped relative to the silicon of the micromachined thermistor, such that the one or more anchors provide greater conductivity than the micromachined thermistor.
16. The integrated circuit device of claim 13 , wherein the MEMS resonator comprises a resonating body formed of silicon doped with phosphorus, and wherein the integrated circuit device further comprises circuitry to regulate the clock signal dependent on variation of the effective resistance.
17. The integrated circuit device of claim 13 , wherein the silicon of the MEMS resonator is doped with an n-type dopant and the silicon of the micromachined thermistor is doped with a p-type dopant.
18. An integrated circuit device comprising:
a substrate;
a micromachined thermistor;
at least one anchor physically connecting the micromachined thermistor to the substrate, the at least one anchor also providing electrical couplings of the integrated circuit device to the micromachined thermistor, by which an effective resistance of the micromachined thermistor that varies according to temperature is to be detected;
a microelectromechanical system (MEMS) resonator; and
circuitry to generate a clock signal dependent on a resonance frequency of the MEMS resonator;
wherein the micromachined thermistor has an electrical path length, and the electrical couplings provided by the at least one anchor are in proximity to one another relative to the electrical path length, such that the electrical path length is substantially greater than a linear distance between the electrical couplings;
wherein the circuitry is detect variation in the effective resistance and is to regulate the clock signal so as to reduce a temperature dependent variation of the clock signal, relative to a temperature dependent variation of the resonance frequency; and
wherein the MEMS resonator comprises silicon having first doping characteristics, and the micromachined thermistor comprises silicon having second doping characteristics, and wherein the first doping characteristics differ from the second doping characteristics by at least one of dopant concentration and dopant type.
19. The integrated circuit device of claim 18 , wherein the silicon of the MEMS resonator is doped with an n-type dopant and the silicon of the micromachined thermistor is doped with a p-type dopant.
20. The integrated circuit device of claim 18 , wherein the integrated circuit device is designed such that the electrical path length is at least twice the linear distance between the electrical couplings.
21. The integrated circuit device of claim 20 , wherein the silicon of the resonating body is doped with phosphorus.
22. The integrated circuit device of claim 18 , wherein the micromachined thermistor and the electrical couplings each comprise silicon, the silicon of the electrical couplings being heavily doped relative to the silicon of the micromachined thermistor, such that the electrical couplings present less resistance than the micromachined thermistor.
23. The integrated circuit device of claim 18 , wherein the first doping characteristics and the second doping characteristics differ by dopant concentration.
24. The integrated circuit device of claim 18 , wherein the first doping characteristics and the second doping characteristics differ by each of dopant type and dopant concentration.