Positions of release ports for sacrificial layer etching
A film bulk acoustic wave resonator includes a piezoelectric film disposed over a cavity. The cavity is shaped as partial ellipse including first, second, and third vertices. The film bulk acoustic wave resonator further includes three release ports in positions that minimize etch time to remove all sacrificial material from within the cavity.
1. A film bulk acoustic wave resonator comprising:
a piezoelectric film disposed over a cavity, the cavity shaped as partial ellipse including first, second, and third vertices; and
three release ports in positions that minimize etch time to remove essentially all sacrificial material from within the cavity, a first of the release ports being located at an edge of the cavity at a first position defined by an intersection of the edge of the cavity and a line perpendicular to a chord between the first and second vertices and extending from a center of the chord between the first and second vertices to the edge of the cavity between the first and second vertices.
2. The resonator of claim 1 wherein a second of the release ports is located at an edge of the cavity at a second position between the first and third vertices defined by a center of a second circle having an edge intersecting the third vertex and having a same size as a first circle having a center located at the first position of the first release port and an edge intersecting the first and second vertices.
3. The resonator of claim 2 wherein a third of the release ports is located at an edge of the cavity at a third position between the second and third vertices defined by a center of a third circle having an edge intersecting the second vertex and having the same size as the first circle.
4. The resonator of claim 3 wherein the chord between the first and second vertices is shorter than a chord between the first and third vertices.
5. The resonator of claim 4 wherein the chord between the first and second vertices is shorter than a chord between the second and third vertices.
6. The resonator of claim 1 wherein each of the three release ports are in fluid communication with an internal volume of the cavity.
7. The resonator of claim 1 further comprising a bottom electrode disposed on a lower side of the piezoelectric film facing the cavity, and a top electrode disposed on an upper side of the piezoelectric film opposite the lower side, wherein at least one of the three release ports are at least partially defined by apertures passing through one or more of the piezoelectric film, the top electrode, or the bottom electrode.
8. The resonator of claim 1 wherein each of the three release ports have substantially identical cross-sectional areas.
9. The resonator of claim 1 wherein a boundary of the cavity is defined by an arc extending from the first vertex to the third vertex.
10. The resonator of claim 9 wherein the second vertex is located on the arc.
11. A radio frequency filter including the resonator of claim 1 .
12. An electronics module including the radio frequency filter of claim 11 .
13. An electronic device including the electronics module of claim 12 .
14. A method of forming a film bulk acoustic wave resonator comprising:
disposing a piezoelectric film over a sacrificial material layer shaped as a partial ellipse including first, second, and third vertices to form a cavity below the piezoelectric film filled with the sacrificial material;
forming three release ports passing through the piezoelectric film and into the sacrificial material layer, forming the three release ports including forming a first release port at a first position located at an edge of the cavity defined by an intersection of a line perpendicular to a chord between the first and second vertices and extending from a center of the chord between the first and second vertices to the edge of the cavity between the first and second vertices; and
removing the sacrificial material layer by introducing an etchant for the sacrificial material through the three release ports, the three release ports being located in positions that minimize etch time to remove essentially all of the sacrificial material.
15. The method of claim 14 wherein forming the three release ports further includes forming a second release port at a second position located at an edge of the cavity between the first and third vertices defined by a center of a second circle having an edge intersecting the third vertex and having a same size as a first circle having a center located at the first position of the first release port and an edge intersecting the first and second vertices.
16. The method of claim 15 wherein forming the three release ports further includes forming a third release port at a third position located at an edge of the cavity between the second and third vertices defined by a center of a third circle having an edge intersecting the second vertex and having the same size as the first circle.
17. The method of claim 16 wherein the first, second, and third release ports are formed by etching.
18. The method of claim 16 further comprising removing etch reaction products from the cavity through one or more of the first, second, and third release ports.
19. The method of claim 16 wherein the film bulk acoustic wave resonator comprises a bottom electrode disposed on a lower side of the piezoelectric film facing the cavity, and a top electrode disposed on an upper side of the piezoelectric film opposite the lower side, and the method further comprises forming at least one of the first, second, and third release ports by forming one or more apertures passing through one or more of the piezoelectric film, the top electrode, or the bottom electrode.
20. The method of claim 14 wherein introducing the etchant for the sacrificial material layer through the release ports includes introducing a fluoride containing gas through the release ports.
21. The method of claim 20 wherein introducing the etchant for the sacrificial material layer through the release ports includes introducing xenon difluoride gas through the release ports.
22. The method of claim 14 wherein disposing the piezoelectric film over the sacrificial material layer comprises disposing the piezoelectric film over a layer of polysilicon.
23. The method of claim 14 wherein introducing the etchant for the sacrificial material layer through the release ports includes introducing a liquid etchant through the release ports.
24. The method of claim 14 further comprising sealing the release ports after removing the sacrificial material layer.