Semiconductor devices and methods of manufacturing semiconductor devices

1. A semiconductor device comprising:

a substrate comprising:

a substrate top side;

a substrate bottom side;

a substrate dielectric structure between the substrate top side and the substrate bottom side;

a substrate conductive structure comprising;

conductive pads at the substrate bottom side; and

conductive paths along the substrate dielectric structure and coupled to the conductive pads; and

a substrate cavity through the substrate dielectric structure;

a base electronic component comprising:

a base electronic component top side comprising:

inner short bumps;

outer short bumps bounding a perimeter around the inner short bumps; and

tall bumps between the outer short bumps and an edge of the base electronic component top side; and

a mounted electronic component coupled to the inner short bumps of the base electronic component;

wherein:

the tall bumps of the base component are coupled to the conductive pads of the substrate;

the mounted electronic component is in the substrate cavity; and

the substrate bottom side covers at least a portion of the outer short bumps of the base electronic component without an electrical connection between a top side of the outer short bumps and the substrate bottom side.

2. The semiconductor device of claim 1 , wherein:

the inner short bumps comprise a first inner short bump adjacent a second inner short bump;

the outer short bumps comprise a first outer short bump adjacent the first inner short bump; and

a distance between the first inner short bump and the first outer short bump is greater than a distance between the first inner short bump and the second inner short bump.

3. The semiconductor device of claim 1 , wherein:

the inner short bumps comprise a first inner short bump adjacent a second inner short bump;

the outer short bumps comprise a first outer short bump adjacent a second outer short bump; and

a distance between the first inner short bump and the second inner short bump is greater than a distance between the first outer short bump and the second outer short bump.

4. The semiconductor device of claim 1 , wherein:

the inner short bumps and the tall bumps are electrically connected with the base electronic component.

5. The semiconductor device of claim 1 , wherein:

the inner short bumps and the outer short bumps comprise conductive tips located opposite the base electronic component top side; and

the inner short bumps and the outer short bumps comprise a same conductive material that is different than a conductive material of the conductive tips.

6. The semiconductor device of claim 1 , further comprising:

a first underfill between the base electronic component and the mounted electronic component;

wherein the first underfill is contained within a dam perimeter defined by the outer short bumps, and the first underfill contacts at least one of the outer short bumps and does not contact the tall bumps.

7. The semiconductor device of claim 6 , further comprising:

a second underfill between the base electronic component and the substrate bottom side;

wherein:

the second underfill contacts at least a lateral portion of the first underfill, a lateral portion of the tall bumps, and a lateral portion of the outer short bumps;

the second underfill extends between the outer short bumps and the substrate bottom side; and

the second underfill does not contact the inner short bumps.

8. The semiconductor device of claim 1 , wherein:

the substrate comprises a cavity inner wall defining the substrate cavity; and

a footprint of the mounted electronic component is closer to the cavity inner wall than to a closest one of the outer short bumps.

9. The semiconductor device of claim 1 , further comprising:

a cap structure coupled to the substrate bottom side;

wherein the base electronic component comprises a bottom side and lateral sides enclosed by the cap structure; and

wherein the cap structure does not contact an encapsulant.

10. The semiconductor device of claim 9 , further comprising:

a passive component coupled to the substrate bottom side and enclosed by the cap structure;

wherein the passive component does not contact an encapsulant.

11. The semiconductor device of claim 1 , further comprising:

an external interconnect coupled to the substrate bottom side.

12. The semiconductor device of claim 1 , further comprising:

a cover structure coupled to the substrate and covering a top side of the mounted electronic component.

13. The semiconductor device of claim 12 , wherein:

the substrate comprises a ledge; and

a perimeter of the cover structure is attached to the ledge.

14. The semiconductor device of claim 13 , wherein:

the substrate comprises a cavity inner wall and a cavity outer wall defining the substrate cavity; and

the ledge extends between the cavity inner wall and the cavity outer wall.

15. The semiconductor device of claim 12 , wherein:

the cover structure is translucent.

16. The semiconductor device of claim 12 , wherein:

the cover structure does not protrude past the substrate top side.

17. A semiconductor device comprising:

a substrate comprising:

a substrate bottom side;

conductive pads at the substrate bottom side; and

a substrate cavity;

a base electronic component comprising:

a base electronic component top side comprising:

inner short bumps;

outer short bumps bounding a perimeter of the inner short bumps; and

tall bumps between the outer short bumps and an edge of the base electronic component top side; and

a mounted electronic component coupled to the inner short bumps of the base electronic component;

a first underfill between the base electronic component and the mounted electronic component;

wherein:

the tall bumps of the base electronic component are coupled to the conductive pads of the substrate;

lateral sides of the mounted electronic component are bounded by the substrate cavity;

the first underfill contacts lateral portions of the inner short bumps and of the outer short bumps without contacting the tall bumps; and

a second underfill between the base electronic component and the substrate bottom side;

wherein the second underfill contacts the outer short bumps and the substrate bottom side.

18. The semiconductor device of claim 17 ,

wherein:

the second underfill contacts a lateral portion of the tall bumps and does not contact the inner short bumps.

19. A semiconductor device comprising:

a substrate comprising:

a substrate bottom side;

conductive pads at the substrate bottom side; and

a substrate cavity;

a stacked component structure coupled with the substrate, the stacked component structure comprising:

a base electronic component comprising:

a base electronic component top side comprising:

inner short bumps;

outer short bumps bounding a perimeter of the inner short bumps; and

tall bumps between the outer short bumps and an edge of the base electronic component top side; and

a mounted electronic component coupled to the inner short bumps of the base electronic component;

wherein:

the tall bumps of the base electronic component are coupled to the conductive pads of the substrate;

the mounted electronic component is in the substrate cavity; and

the substrate bottom side covers at least a portion of the outer short bumps of the base electronic component without an electrical connection between a top side of the outer short bumps and the substrate bottom side.

20. The semiconductor device of claim 19 , wherein:

the outer short bumps comprise conductive tips located opposite the base electronic component top side;

a conductive material of the outer short bumps is different than a conductive material of the conductive tips; and

a height of the tall bumps, from the base electronic component top side, is greater than a height of the conductive tips of the outer short bumps.