Display apparatus and method of manufacturing the same
A display apparatus includes a base substrate including a display area in which an image is displayed and a peripheral area adjacent to the display area, a source/drain pattern on the base substrate, the source/drain pattern including a connecting electrode in a pad portion of the peripheral area and a electrode of a thin film transistor in the display area, a planarization insulation layer on the base substrate, the planarization insulation layer contacting a side surface of the connecting electrode and a side surface of the electrode of the thin film transistor, and exposing a top surface of the connecting electrode, a connecting member contacting the connecting electrode, and a driving member including a driving circuit, the driving member being connected to the connecting member.
1. A display apparatus, comprising:
a base substrate including a display area in which an image is displayed and a peripheral area adjacent to the display area;
a source/drain pattern on the base substrate, the source/drain pattern including a connecting electrode in a pad portion of the peripheral area and an electrode of a thin film transistor in the display area;
a planarization insulation layer on the base substrate, the planarization insulation layer contacting a side surface of the connecting electrode and a side surface of the electrode of the thin film transistor, and exposing an entire top surface of the connecting electrode;
a connecting member contacting the connecting electrode; and
a driving member including a driving circuit, the driving member being connected to the connecting member.
2. The display apparatus as claimed in claim 1 , wherein:
the connecting electrode includes a first layer pattern, and a second layer pattern on the first layer pattern,
a constituent material of the first layer pattern and a constituent material of the second layer pattern are different from each other, and
a top surface of the second layer pattern contacts the connecting member.
3. The display apparatus as claimed in claim 1 , wherein the top surface of the connecting electrode has a smaller planar area than a bottom surface of the connecting electrode so that the connecting electrode has a constant tapered cross-section.
4. The display apparatus as claimed in claim 1 , further comprising:
a via insulation layer on the planarization insulation layer;
a light emitting structure on the via insulation layer, the light emitting structure being electrically connected to the thin film transistor;
a thin film encapsulation layer on the light emitting structure; and
a touch structure directly on the thin film encapsulation layer.
5. The display apparatus as claimed in claim 1 , further comprising:
a stop layer pattern between the planarization insulation layer and the base substrate and between the planarization insulation layer and a side surface of the source/drain pattern, the stop layer pattern including different materials from the planarization insulation layer.
6. The display apparatus as claimed in claim 5 , wherein the stop layer pattern includes silicon oxide (SiOx) or silicon nitride (SiNx).
7. The display apparatus as claimed in claim 5 , wherein the stop layer pattern includes an organic insulation material.
8. The display apparatus as claimed in claim 1 , wherein:
the source/drain pattern is received in a recess on a top surface of the planarization insulation layer, and
the side surface and a bottom surface of the connecting electrode contact the planarization insulation layer.
9. The display apparatus as claimed in claim 1 , wherein the top surface of the connecting electrode is even with a top surface of the planarization insulation layer.
10. The display apparatus as claimed in claim 1 , wherein both the top surface of the connecting electrode and a top surface of the electrode of the thin film transistor are even with a top surface of the planarization insulation layer.
11. A display apparatus, comprising:
a base substrate including a display area in which an image is displayed and a peripheral area adjacent to the display area;
a source/drain pattern on the base substrate, the source/drain pattern including a connecting electrode in a pad portion of the peripheral area and an electrode of a thin film transistor in the display area;
a planarization insulation layer on the base substrate, the planarization insulation layer contacting a side surface of the connecting electrode and a side surface of the electrode of the thin film transistor, and exposing a top surface of the connecting electrode;
a via insulation layer on the planarization insulation layer;
a first electrode on the via insulation layer, the first electrode being electrically connected to the thin film transistor, wherein the first electrode includes silver (Ag);
a connecting member contacting the connecting electrode; and
a driving member including a driving circuit, the driving member being connected to the connecting member.
12. The display apparatus as claimed in claim 11 , wherein:
the connecting electrode includes a first layer pattern, and a second layer pattern on the first layer pattern,
a constituent material of the first layer pattern and a constituent material of the second layer pattern are different from each other, and
a top surface of the second layer pattern contacts the connecting member.
13. The display apparatus as claimed in claim 11 , wherein:
the connecting electrode includes a first layer pattern, and a second layer pattern on the first layer pattern, the second layer pattern including titanium (Ti), and
a constituent material of the first layer pattern is different from titanium.
14. The display apparatus as claimed in claim 11 , wherein:
the connecting electrode includes a first layer pattern that includes aluminum (Al), and a second layer pattern on the first layer pattern, and
a constituent material of the second layer pattern is different from aluminum.
15. The display apparatus as claimed in claim 11 , wherein the connecting electrode includes a first layer pattern that includes aluminum (Al), and a second layer pattern on the first layer pattern, the second layer pattern including titanium (Ti).
16. A method of manufacturing a display apparatus, the method comprising:
forming a source/drain pattern on a base substrate that includes a display area in which an image is to be displayed and a peripheral area adjacent to the display area, the source/drain pattern including a connecting electrode in a pad portion of the peripheral area and an electrode of a thin film transistor disposed in the display area;
forming a preliminary insulation layer on the base substrate on which the source/drain pattern is formed;
forming a planarization insulation layer that exposes an entire top surface of the connecting electrode by removing a portion of the preliminary insulation layer; and
connecting the connecting electrode and a driving member that includes a driving circuit, using a connecting member between the connecting electrode and the driving member.
17. The method as claimed in claim 16 , wherein forming the source/drain pattern includes:
sequentially forming a first layer and a second layer, the second layer being made of a material different from the first layer; and
forming the source/drain pattern by etching the second layer and the first layer.
18. The method as claimed in claim 17 , further comprising:
forming a via insulation layer on the planarization insulation layer; and
forming a first electrode including silver (Ag) on the via insulation layer.
19. The method as claimed in claim 16 , wherein forming the planarization insulation layer includes removing a portion of the preliminary insulation layer located on the connecting electrode through a chemical mechanical planarization (CMP) process to expose the top surface of the connecting electrode.
20. The method as claimed in claim 16 , further comprising forming a stop layer on the source/drain pattern before forming the preliminary insulation layer, wherein forming the planarization insulation layer includes:
removing a portion of the preliminary insulation layer located on the connecting electrode through a chemical mechanical planarization (CMP) process to expose the stop layer; and
removing a portion of the stop layer to expose the top surface of the connecting electrode, wherein
the stop layer includes a material having a lower CMP selectivity than the planarization insulation layer for the CMP process for the planarization insulation layer.
21. The method as claimed in claim 20 , wherein the stop layer includes silicon oxide (SiOx) or silicon nitride (SiNx).
22. The method as claimed in claim 20 , wherein the stop layer includes an organic insulation material.
23. The method as claimed in claim 16 , further comprising:
forming a via insulation layer on the planarization layer;
forming a light emitting structure on the via insulation layer;
forming a thin film encapsulation layer on the light emitting structure; and
directly forming a touch structure on the thin film encapsulation layer.
24. The method as claimed in claim 16 , further comprising forming a lower insulation layer on the base substrate before forming the source/drain pattern, wherein
the lower insulation layer and the preliminary insulation layer formed on the base substrate on which the source/drain pattern is formed are formed of a same material.
25. The method as claimed in claim 16 , further comprising:
forming a via insulation layer on the planarization insulation layer;
forming a light emitting structure on the via insulation layer;
forming a thin film encapsulation layer on the light emitting structure; and
forming a touch structure directly on the thin film encapsulation layer.
26. The method as claimed in claim 16 , wherein the connecting member includes a conductive adhesive.