IP Library › Granted Patent US 12,310,198
Granted Patent B2
US 12,310,198 · App. 18/585,660 · Granted May 20, 2025

Display apparatus and method of manufacturing the same

Inventors: Dong Hyun Son (Seoul, KR); Sung Hoon Moon (Cheonan-si, KR); Sung Jun Kim (Hwaseong-si, KR); Kohei Ebisuno (Hwaseong-si, KR); Deok Hoi Kim (Seongnam-si, KR); Sanghoon Oh (Gangwon-do, KR)
Assignee: SAMSUNG DISPLAY CO., LTD.
H10K59/131H10K50/844H10K59/124H10K59/40H10K71/00H10K77/111H10K59/1201H10K2102/311
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,310,198
App. No.
18/585,660
Granted
May 20, 2025
Kind
B2
Abstract

A display apparatus includes a base substrate including a display area in which an image is displayed and a peripheral area adjacent to the display area, a source/drain pattern on the base substrate, the source/drain pattern including a connecting electrode in a pad portion of the peripheral area and a electrode of a thin film transistor in the display area, a planarization insulation layer on the base substrate, the planarization insulation layer contacting a side surface of the connecting electrode and a side surface of the electrode of the thin film transistor, and exposing a top surface of the connecting electrode, a connecting member contacting the connecting electrode, and a driving member including a driving circuit, the driving member being connected to the connecting member.

Claims (45)

1. A display apparatus, comprising:

a base substrate including a display area in which an image is displayed and a peripheral area adjacent to the display area;

a semiconductor layer including an active pattern disposed on the base substrate;

a first insulation layer disposed on the base substrate on which the active pattern is disposed;

a first conductive layer including a gate pattern disposed on the first insulation layer;

a second insulation layer disposed on the first insulation layer on which the gate pattern is disposed;

a second conductive layer disposed on the second insulation layer, the second conductive layer including a connecting electrode in a pad portion of the peripheral area;

a third insulation layer pattern disposed on the second insulation layer, the third insulation layer pattern covering a side surface of the connecting electrode without covering an entire top surface of the connecting electrode; and

a planarization insulation layer on the second insulation layer on which the third insulation layer pattern is disposed, the planarization insulation layer having a top surface that is even with, and that exposes, the entire top surface of the connecting electrode.

2. The display apparatus as claimed in claim 1 , wherein the top surface of the planarization insulation layer exposes a first portion of the third insulation layer pattern that abuts the connecting electrode.

3. The display apparatus as claimed in claim 2 , wherein an entire top surface of the first portion of the third insulation layer pattern is even with the top surface of the planarization insulation layer and the entire top surface of the connecting electrode.

4. The display apparatus as claimed in claim 2 , wherein

the second conductive layer further includes an electrode of a thin film transistor in the display area,

the third insulation layer pattern covers a side surface of the electrode of the thin film transistor without covering an entire top surface of the electrode of the thin film transistor, and

the planarization insulation layer has the top surface that is even with, and that exposes, the entire top surface of the electrode of the thin film transistor.

5. The display apparatus as claimed in claim 4 , wherein the planarization insulation layer exposes a second portion of the third insulation layer pattern that abuts the electrode of the thin film transistor.

6. The display apparatus as claimed in claim 5 , wherein an entire top surface of the second portion of the third insulation layer pattern is even with the top surface of the planarization insulation layer and the entire top surface of the electrode of the thin film transistor.

7. The display apparatus as claimed in claim 1 , wherein the entire top surface of the connecting electrode has a smaller planar area than a bottom surface of the connecting electrode so that the connecting electrode has a constant tapered cross-section.

8. The display apparatus as claimed in claim 1 , further comprising:

a connecting member contacting the connecting electrode; and

a driving member including a driving circuit, the driving member being connected to the connecting member.

9. The display apparatus as claimed in claim 8 , wherein

the connecting electrode includes a first layer pattern, and a second layer pattern on the first layer pattern,

a constituent material of the first layer pattern and a constituent material of the second layer pattern are different from each other, and

a top surface of the second layer pattern contacts the connecting member.

10. The display apparatus as claimed in claim 1 , wherein

the connecting electrode includes a first layer pattern, and a second layer pattern on the first layer pattern, the second layer pattern including titanium (Ti), and

a constituent material of the first layer pattern is different from titanium.

11. The display apparatus as claimed in claim 1 , wherein

the connecting electrode includes a first layer pattern that includes aluminum (Al), and a second layer pattern on the first layer pattern, and

a constituent material of the second layer pattern is different from aluminum.

12. The display apparatus as claimed in claim 1 , wherein

the connecting electrode includes a first layer pattern that includes aluminum (Al), and a second layer pattern on the first layer pattern, and

the second layer pattern includes titanium (Ti).

13. The display apparatus as claimed in claim 1 , further comprising:

a via insulation layer on the planarization insulation layer; and

a first electrode on the via insulation layer, the first electrode being electrically connected to a thin film transistor in the display area,

wherein the first electrode includes silver (Ag).

14. The display apparatus as claimed in claim 1 , further comprising:

a via insulation layer on the planarization insulation layer;

a light emitting structure on the via insulation layer, the light emitting structure being electrically connected to a thin film transistor in the display area;

a thin film encapsulation layer on the light emitting structure; and

a touch structure directly on the thin film encapsulation layer.

15. The display apparatus as claimed in claim 1 , wherein the third insulation layer pattern includes silicon oxide (SiOx) or silicon nitride (SiNx).

16. The display apparatus as claimed in claim 1 , wherein the third insulation layer pattern includes an organic insulation material.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 26, 2024
From: SON, DONG HYUN; MOON, SUNG HOON; KIM, SUNG JUN; EBISUNO, KOHEI; KIM, DEOK HOI; OH, SANGHOON
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 066562/0835 →
Priority Claims (1)
KR 10-2018-0116876 · Oct 1, 2018 · national
Continuity (4)
Continuation 18093861 · Jan 6, 2023
Continuation 17177363 · Feb 17, 2021
Continuation 16580042 · Sep 24, 2019
Related Publication 20240196681A1 · Jun 13, 2024
References Cited (40)
US 8791032B2 · Park et al. · 2014 [cited by applicant]
US 9437665B2 · Yoon · 2016 [cited by applicant]
US 9812217B2 · Yamazaki et al. · 2017 [cited by applicant]
US 10020205B2 · You et al. · 2018 [cited by applicant]
US 10950681B2 · Son et al. · 2021 [cited by applicant]
US 11552157B2 · Son et al. · 2023 [cited by applicant]
US 11950471B2 · Son · 2024 [cited by examiner]
US 20070035239A1 · Kang et al. · 2007 [cited by applicant]
US 20130005064A1 · Park · 2013 [cited by applicant]
US 20140140019A1 · Park et al. · 2014 [cited by applicant]
US 20150008432A1 · Kim et al. · 2015 [cited by applicant]
US 20160077390A1 · Sato · 2016 [cited by applicant]
US 20160079344A1 · Agam et al. · 2016 [cited by applicant]
US 20160118244A1 · Hayashi et al. · 2016 [cited by applicant]
US 20160155828A1 · Sugawara · 2016 [cited by applicant]
US 20160307971A1 · Jeon · 2016 [cited by applicant]
US 20170148863A1 · Yoon et al. · 2017 [cited by applicant]
US 20180006265A1 · Oh · 2018 [cited by applicant]
US 20180108859A1 · Ahn et al. · 2018 [cited by applicant]
US 20200097116A1 · Choi et al. · 2020 [cited by applicant]
US 20220271243A1 · Lee et al. · 2022 [cited by applicant]
CN 102842509 · 2012 [cited by applicant]
CN 106328673 · 2017 [cited by applicant]
KR 1020070019838 · 2007 [cited by applicant]
KR 1020110065717 · 2011 [cited by applicant]
KR 1020140063305 · 2014 [cited by applicant]
KR 1020150021212 · 2015 [cited by applicant]
KR 1020160033571 · 2016 [cited by applicant]
KR 1020170060217 · 2017 [cited by applicant]
KR 1020170071047 · 2017 [cited by applicant]
KR 1020170106621 · 2017 [cited by applicant]
KR 1020180003329 · 2018 [cited by applicant]
KR 1020180012942 · 2018 [cited by applicant]
KR 1020180043434 · 2018 [cited by applicant]
KR 1020180065735 · 2018 [cited by applicant]
“Near.” Merriam-Webster.com. Merriam-Webster, 2024. Web. Sep. 17, 2024. (Year: 2024). [cited by examiner]
Korean Notice of Allowance, with English Translation, of Korean Application No. 10-2018-0116876, dated Nov. 9, 2023. [cited by applicant]
Korean Office Action, with English Translation, for Korean Patent Application No. 10-2024-0013872, dated Mar. 4, 2024. [cited by applicant]
Chinese Office Action with English translation for Chinese Patent Application No. 201910922040.4, dated Jun. 7, 2024. [cited by applicant]
Notice of Allowance with English translation for Korean Patent Application or Patent No. 10-2024-0013872, dated Nov. 26, 2024. [cited by applicant]