IP Library › Granted Patent US 11,552,157
Granted Patent B2
US 11,552,157 · App. 17/177,363 · Granted Jan 10, 2023

Display apparatus and method of manufacturing the same

Inventors: Dong Hyun Son (Seoul, KR); Sung Hoon Moon (Cheonan-si, KR); Sung Jun Kim (Hwaseong-si, KR); Kohei Ebisuno (Hwaseong-si, KR); Deok Hoi Kim (Seongnam-si, KR); Sanghoon Oh (Gangwon-do, KR)
Assignee: SAMSUNG DISPLAY CO., LTD.
H01L27/3276H01L27/323H01L27/3258H01L51/0097H01L51/5253H01L51/56H01L2227/323H01L2251/5338
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Quick Facts
Patent No.
US 11,552,157
App. No.
17/177,363
Granted
Jan 10, 2023
Kind
B2
Abstract

A display apparatus includes a base substrate including a display area in which an image is displayed and a peripheral area adjacent to the display area, a source/drain pattern on the base substrate, the source/drain pattern including a connecting electrode in a pad portion of the peripheral area and a electrode of a thin film transistor in the display area, a planarization insulation layer on the base substrate, the planarization insulation layer contacting a side surface of the connecting electrode and a side surface of the electrode of the thin film transistor, and exposing a top surface of the connecting electrode, a connecting member contacting the connecting electrode, and a driving member including a driving circuit, the driving member being connected to the connecting member.

Claims (43)

1. A display apparatus, comprising:

a base substrate including a display area in which an image is displayed and a peripheral area adjacent to the display area;

a source/drain pattern disposed on the base substrate, the source/drain pattern including an electrode of a thin film transistor in the display area; and

a planarization insulation layer on the base substrate, the planarization insulation layer contacting a side surface of the electrode of the thin film transistor, and having a top surface that is even with, and that exposes, an entire top surface of the electrode of the thin film transistor.

2. The display apparatus as claimed in claim 1 , wherein

the source/drain pattern further includes a connecting electrode in a pad portion of the peripheral area, and

the planarization insulation layer contacts a side surface of the connecting electrode and exposes an entire top surface of the connecting electrode.

3. The display apparatus as claimed in claim 2 , wherein the top surface of the connecting electrode has a smaller planar area than a bottom surface of the connecting electrode so that the connecting electrode has a constant tapered cross-section.

4. The display apparatus as claimed in claim 2 , further comprising:

a connecting member contacting the connecting electrode; and

a driving member including a driving circuit, the driving member being connected to the connecting member.

5. The display apparatus as claimed in claim 4 , wherein:

the connecting electrode includes a first layer pattern, and a second layer pattern on the first layer pattern,

a constituent material of the first layer pattern and a constituent material of the second layer pattern are different from each other, and

a top surface of the second layer pattern contacts the connecting member.

6. The display apparatus as claimed in claim 2 , wherein:

the connecting electrode includes a first layer pattern, and a second layer pattern on the first layer pattern, the second layer pattern including titanium (Ti), and

a constituent material of the first layer pattern is different from titanium.

7. The display apparatus as claimed in claim 2 , wherein:

the connecting electrode includes a first layer pattern that includes aluminum (Al), and a second layer pattern on the first layer pattern, and

a constituent material of the second layer pattern is different from aluminum.

8. The display apparatus as claimed in claim 2 , wherein the connecting electrode includes a first layer pattern that includes aluminum (Al), and a second layer pattern on the first layer pattern, the second layer pattern including titanium (Ti).

9. The display apparatus as claimed in claim 2 , wherein both the top surface of the connecting electrode and the top surface of the electrode of the thin film transistor are even with a top surface of the planarization insulation layer.

10. The display apparatus as claimed in claim 1 , further comprising:

a via insulation layer on the planarization insulation layer; and

a first electrode on the via insulation layer, the first electrode being electrically connected to the thin film transistor, and

wherein the first electrode includes silver (Ag).

11. The display apparatus as claimed in claim 1 , further comprising:

a via insulation layer on the planarization insulation layer;

a light emitting structure on the via insulation layer, the light emitting structure being electrically connected to the thin film transistor;

a thin film encapsulation layer on the light emitting structure; and

a touch structure directly on the thin film encapsulation layer.

12. The display apparatus as claimed in claim 1 , further comprising:

a stop layer pattern between the planarization insulation layer and the base substrate and between the planarization insulation layer and a side surface of the source/drain pattern, the stop layer pattern including different materials from the planarization insulation layer.

13. The display apparatus as claimed in claim 12 , wherein the stop layer pattern includes silicon oxide (SiOx) or silicon nitride (SiNx).

14. The display apparatus as claimed in claim 12 , wherein the stop layer pattern includes an organic insulation material.

15. A display apparatus, comprising:

a base substrate including a display area in which an image is displayed and a peripheral area adjacent to the display area;

a source/drain pattern on the base substrate, the source/drain pattern including an electrode of a thin film transistor in the display area; and

a planarization insulation layer on the base substrate, the planarization insulation layer contacting a side surface of the electrode of the thin film transistor, and exposing an entire top surface of the electrode of the thin film transistor, wherein

the source/drain pattern further includes a connecting electrode in a pad portion of the peripheral area,

the planarization insulation layer contacts a side surface of the connecting electrode and exposes an entire top surface of the connecting electrode, and

the top surface of the connecting electrode is even with a top surface of the planarization insulation layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 17, 2021
From: SON, DONG HYUN; MOON, SUNG HOON; KIM, SUNG JUN; KOHEI, EBISUNO; KIM, DEOK HOI; OH, SANGHOON
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 055294/0001 →
Priority Claims (1)
KR 10-2018-0116876 · Oct 1, 2018 · national
Continuity (2)
Continuation 16580042 · Sep 24, 2019
Related Publication 20210175317A1 · Jun 10, 2021
Cited By (3)
US 12,310,198 US 12,684,970 US 12,733,357