Method of manufacturing semiconductor device and method of cleaning substrate
In a method of cleaning a substrate, a solution including a size-modification material is applied on a substrate, on which particles to be removed are disposed. Size-modified particles having larger size than the particles are generated, from the particles and the size-modification material. The size-modified particles are removed from the substrate.
1. A method of cleaning a substrate, comprising:
applying a solution including a size-modification material on a substrate from a nozzle, while the substrate being rotated, on which particles to be removed are disposed;
generating, on the substrate, size-modified particles having a larger size than the particles to be removed, from the particles disposed on the substrate and the size-modification material; and
removing the size-modified particles from the substrate,
wherein the size-modification material includes a silane coupling agent.
2. The method of claim 1 , wherein the removing the size-modified particles from the substrate includes applying an organic solvent while the substrate being rotated.
3. The method of claim 1 , wherein the removing the size-modified particles from the substrate includes applying an aqueous solution including NH 4 OH and H 2 O 2 while the substrate being rotated.
4. The method of claim 1 , wherein:
an average particle size of the particles to be removed before size modification ranges from 0.1 nm to 40 nm, and
an average size of the size-modified particles ranges from 50 nm to 1000 μm.
5. The method of claim 1 , wherein the silane coupling agent has a general formula SiX(OR) 3-n , where X is functional group coupled to Si and R is an alkoxy group.
6. The method of claim 5 , wherein X is one selected from the group consisting of vinyl, epoxy, methacryloxy, acryloxy, amino and mercapto.
7. The method of claim 5 , wherein the alkoxy group is one selected from the group consisting of methoxy, ethoxy, dialkoxy and trialkoxy.
8. The method of claim 5 , wherein the functional group X is directly bonded to Si.
9. The method of claim 5 , wherein the functional group X is connected by an alkyl chain having a carbon number less than 18.
10. The method of claim 9 , wherein the alkyl chain has a straight chain.
11. A method of cleaning a substrate, the method comprising:
performing plasma processing on one or more layers disposed over the substrate;
dispensing a solution including a size-modification material over the substrate, on which particles caused by the plasma processing are disposed, from a nozzle while the substrate being rotated, the size-modification material includes a polymerizable material;
generating, on the substrate, size-modified particles having a larger size than the particles caused by the plasma processing, from the particles caused by the plasma processing disposed on the substrate and the size-modification material via a polymerization process; and
removing the size-modified particles from the substrate.
12. The method of claim 11 , wherein the plasma processing includes one selected from the group consisting of plasma dry etching, plasma resist aching and plasma film deposition.
13. The method of claim 11 , wherein the polymerization process is performed by applying heat.
14. The method of claim 11 , wherein the polymerization process is performed by applying ultra violet light.
15. The method of claim 11 , wherein the polymerizable material is an acrylic monomer selected from the group consisting of an acrylamide, a methacrylamide, an acrylate, an acrylonitrile, a bisphenol acrylic, a carbohydrate monomer, a fluorinated acrylic, a maleimide and a methacrylate.
16. The method of claim 11 , wherein the substrate is a rectangular glass substrate.
17. A method of cleaning a substrate, the method comprising:
performing plasma processing on one or more layers disposed over the substrate;
dispensing a solution including a size-modification material over the substrate, on which particles caused by the plasma processing are disposed, from a nozzle while the substrate being rotated, the size-modification material includes a polymer;
generating, on the substrate, size-modified particles having a larger size than the particles caused by the plasma processing, from the particles caused by the plasma processing disposed on the substrate and the size-modification material; and
removing the size-modified particles from the substrate,
wherein the polymer includes at least one of:
cellulose,
a polymeric surfactant represented by:
a poly acrylic acid having a weight-average molecular weight ranging from 1,000 to 4,000,000.
18. The method of claim 17 , wherein the size-modified particles are removed from the substrate, by applying an organic solvent or an aqueous solution including NH 4 OH and H 2 O 2 , while the substrate being rotated.
19. The method of claim 17 , wherein a size of the particles is in a range from 0.1 nm to 40 nm.
20. The method of claim 17 , wherein a size of the size-modified particles is in a range from 200 nm to 200 μm.