IP Library Granted Patent US 10,770,351
Granted Patent B2
US 10,770,351 · App. 16/581,964 · Granted Sep 8, 2020

Semiconductor substrate production systems and related methods

Inventor: Michael J. Seddon (Gilbert, AZ)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H01L21/7806B23K26/53C30B29/36B23K2101/40
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Quick Facts
Patent No.
US 10,770,351
App. No.
16/581,964
Granted
Sep 8, 2020
Kind
B2
Abstract

Implementations of a method of separating a wafer from a boule including semiconductor material may include: creating a damage layer in a boule comprising semiconductor material. The boule may have a first end and a second end. The method may include cooling the first end of the boule and heating the second end of the boule. A thermal gradient may be formed between the cooled first end and the heated second end. The thermal gradient may assist a silicon carbide wafer to separate from the boule at the damage layer.

Claims (31)

1. A method of separating a wafer from a boule comprising a semiconductor material, the method comprising:

creating a damage layer in a boule comprising semiconductor material, wherein the boule has a first end and a second end; and

cooling the first end of the boule;

wherein a thermal gradient between the first end and the second end assists a silicon carbide wafer to separate from the boule at the damage layer.

2. The method of claim 1 , wherein the damage layer is created through laser irradiation.

3. The method of claim 1 , further comprising heating the second end of the boule.

4. The method of claim 3 , wherein heating the second end of the boule comprises applying pulses of heat using a heating chuck.

5. The method of claim 1 , wherein cooling the first end of the boule further comprises contacting the first end of the boule with liquid nitrogen.

6. The method of claim 1 , wherein cooling the first end of the boule further comprises contacting the first end of the boule with liquid nitrogen.

7. The method of claim 3 , further comprising placing the second side of the boule on a heating chuck and one of peeling, prying, and twisting the first end of the boule with a grip while applying heat to the second side of the boule.

8. A method of separating a wafer from a boule of silicon carbide, the method comprising:

creating a damage layer in a boule of silicon carbide, wherein the boule has a first end and a second end;

applying a material onto the second end of the boule; and

heating the material at the second end of the boule;

wherein a thermal gradient caused by heating the second end of the boule assists a silicon carbide wafer to separate from the boule at the damage layer.

9. The method of claim 8 , wherein the damage layer is created through laser irradiation.

10. The method of claim 8 , wherein the material increases thermal conduction to the second end of the boule.

11. The method of claim 8 , further comprising cooling the first end of the boule.

12. The method of claim 8 , wherein heating the second end of the boule comprises applying pulses of heat through a heating chuck.

13. The method of claim 8 , wherein heating the second end of the boule further comprises applying a hot liquid to the second end of the boule.

14. The method of claim 8 , wherein heating the second end of the boule further comprises rapidly immersing the second end of the boule into a hot liquid.

15. The method of claim 8 , further comprising placing the second side of the boule on a heating chuck, one of peeling, prying, and twisting the first end of the boule with a grip while applying heat to the second side of the boule.

16. A method of separating a wafer from a boule of silicon carbide, the method comprising:

cooling or heating an end of a boule;

creating a damage layer in a boule of silicon carbide, wherein the boule has a first end and a second end;

creating a thermal gradient between the first end and the second end of the boule; and

mechanically separating a silicon carbide wafer from the boule at the damage layer.

17. The method of claim 16 , wherein the end of the boule is contacted to a heating chuck and heated rapidly.

18. The method of claim 16 , wherein heating the end of the boule further comprises applying pulses of heat through a heating chuck.

19. The method of claim 16 , wherein heating the end of the boule further comprises applying a hot liquid to the end of the boule.

20. The method of claim 16 , wherein heating the end of the boule further comprises immersing the end of the boule into a hot liquid.

Assignments (5)
SECURITY INTEREST Recorded Jul 13, 2023
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; GTAT CORPORATION
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064271/0971 →
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 051145, FRAME 0062 Recorded Jun 23, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064079/0474 →
CORRECTIVE ASSIGNMENT TO CORRECT THE EXCLUSION OF FAIRCHILD SEMICONDUCTOR CORPORATION OF CONVEYING PARTY PREVIOUSLY RECORDED ON REEL 051145 FRAME 0062. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Dec 3, 2019
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 051170/0781 →
SECURITY INTEREST Recorded Nov 26, 2019
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 051145/0062 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 25, 2019
From: SEDDON, MICHAEL J.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 050483/0413 →