Apparatus for stacking substrates and method for the same
A substrate stacking apparatus that stacks first and second substrates on each other, by forming a contact region where the first substrate held by a first holding section and the second substrate held by a second holding section contact each other, at one portion of the first and second substrates, and expanding the contact region from the one portion by releasing holding of the first substrate by the first holding section, wherein an amount of deformation occurring in a plurality of directions at least in the first substrate differs when the contact region expands, and the substrate stacking apparatus includes a restricting section that restricts misalignment between the first and second substrates caused by a difference in the amount of deformation. In the substrate stacking apparatus above, the restricting section may restrict the misalignment such that an amount of the misalignment is less than or equal to a prescribed value.
1. A substrate processing method for processing at least one of a first substrate and a second substrate to be stacked on each other, comprising:
obtaining a correction amount to correct misalignment to be occurred between the first substrate and the second substrate; and
forming a structure on each of the first substrate and the second substrate, the structure of the at least one of the first substrate and the second substrate being formed at a position determined based on the obtained correction amount, wherein
the structure of the at least one of the first substrate and the second substrate is a chip formed in the at least one of the first substrate and the second substrate while adjusting at least one of (i) intervals between a plurality of chips, (ii) shapes of the plurality of chips, (iii) intervals of shots, and (iv) shapes of the shots, the shots including a plurality of chips.
2. The substrate processing method according to claim 1 , wherein
the structure of the at least one of the first substrate and the second substrate is formed at the position according to an amount of deformation of the first substrate.
3. The substrate processing method according to claim 2 , wherein
the amount of deformation includes an amount of deformation generated in the first substrate during a process of stacking the first substrate and the second substrate on each other.
4. The substrate processing method according to claim 2 , wherein
the position of the structure varies depending on a radial direction within a plane of the at least one of the first substrate and the second substrate.
5. The substrate processing method according to claim 1 , wherein
the forming includes forming a plurality of structures on the at least one of the first substrate and the second substrate such that intervals between the plurality of structures change from a center toward an edge of the at least one of the first substrate and the second substrate.
6. The substrate processing method according to claim 1 , wherein
the chip is formed by exposing the at least one of the first substrate and the second substrate, and the plurality of chips are formed by a single exposure.
7. The substrate processing method according to claim 6 , wherein
an amount of change in at least one of the intervals of the plurality of chips, the shapes of the plurality of chips, the intervals of the shots, and the shapes of the shots vary depending on the position.
8. The substrate processing method according to claim 1 , further comprising:
restricting the misalignment when stacking the first substrate and the second substrate on each other.
9. The substrate processing method according to claim 1 , wherein
the forming includes forming the structure on the first substrate such that a modulus of elasticity of the first substrate is partially changed.
10. The substrate processing method according to claim 9 , wherein
the structure is formed on a scribe line of the first substrate.
11. The substrate processing method according to claim 1 , further comprising:
selecting the first substrate and the second substrate such that a difference in an amount of deformation in a direction corresponding to each other between the first substrate and the second substrate is less than or equal to a prescribed value; and
releasing holding of the first substrate from a first holding section and releasing holding of the second substrate from a second holding section, when stacking the first substrate and the second substrate on each other.
12. The substrate processing method according to claim 1 , further comprising:
activating a bonding surface of each of the first substrate and the second substrate to a degree of activation, wherein
the degree of activation of at least one of the first substrate and the second substrate is adjusted according to an amount of deformation of the first substrate.
13. The substrate processing method according to claim 1 , further comprising:
setting the first substrate to be a substrate, between two substrates to be stacked on each other, having at least one of a distortion amount and a warping amount that is smaller in a state where the two substrates are not held.
14. The substrate processing method according to claim 1 , further comprising:
setting the first substrate to be a substrate, between two substrates to be stacked on each other, having a smaller difference in an amount of deformation.
15. The substrate processing method according to claim 1 , further comprising:
calculating at least one of the position, at which the structure is formed on the first substrate, and the position, at which the structure is formed on the second substrate, such that the misalignment is restricted between the structure of the first substrate and the structure of the second substrate once the first substrate and the second substrate have been stacked on each other.
16. The substrate processing method according to claim 1 , wherein
the substrate stack retains the restricted misalignment when separated from a substrate stacking apparatus.
17. The substrate processing method according to claim 1 , wherein
the forming includes forming a plurality of structures on the at least one of the first substrate and the second substrate while adjusting at least one of (i) intervals between the plurality of structures, and (ii) shapes of the plurality of structures.
18. The substrate processing method according to claim 17 , wherein the transferring the pattern is done by performing exposure.
19. A substrate processing system, comprising:
a bonding apparatus configured to stack a first substrate and a second substrate on each other and obtain a correction amount to correct misalignment to be occurred between the first substrate and the second substrate; and an exposure apparatus configured to form a structure on at least one of the first substrate and the second substrate by exposing the at least one of the first substrate and the second substrate at a position determined based on the obtained correction amount, wherein
the structure of the at least one of the first substrate and the second substrate is a chip formed in the at least one of the first substrate and the second substrate while adjusting at least one of (i) intervals between a plurality of chips, (ii) shapes of the plurality of chips, (iii) intervals of exposure shots, and (iv) shapes of the exposure shots.
20. An exposure method for forming a structure on each of a first substrate and a second substrate to be stacked on each other by exposing the first substrate and the second substrate, comprising:
obtaining a correction amount to correct misalignment to be occurred between the first substrate and the second substrate; and
forming, on at least one of the first substrate and the second substrate, the structure at a position determined based on the obtained correction amount, wherein
the structure of the at least one of the first substrate and the second substrate is a chip formed in the at least one of the first substrate and the second substrate while adjusting at least one of (i) intervals between a plurality of chips, (ii) shapes of the plurality of chips, (iii) intervals of exposure shots, and (iv) shapes of the exposure shots.
21. A substrate processing method for processing at least one of a first substrate and a second substrate to be stacked on each other, comprising:
transferring a pattern on at least one of the first substrate and the second substrate, wherein
the pattern of the at least one of the first substrate and the second substrate is a chip formed in the at least one of the first substrate and the second substrate while adjusting at least one of (i) intervals between a plurality of chips, (ii) shapes of the plurality of chips, (iii) intervals of shots, and (iv) shapes of the shots, the shots including a plurality of chips.
22. The substrate processing method according to claim 21 , wherein the transferring the pattern is done by performing exposure.
23. A substrate processing method for processing at least one of a first substrate and a second substrate to be stacked on each other, comprising:
transferring a pattern on each of the first substrate and the second substrate, the pattern of the at least one of the first substrate and the second substrate being formed at a position such that misalignment is restricted between the pattern of the first substrate and the pattern of the second substrate, wherein
the pattern of the at least one of the first substrate and the second substrate is a chip formed in the at least one of the first substrate and the second substrate while adjusting at least one of (i) intervals between a plurality of chips, (ii) shapes of the plurality of chips, (iii) intervals of shots, and (iv) shapes of the shots, the shots including a plurality of chips.
24. A substrate processing method for processing at least one of a first substrate and a second substrate to be stacked on each other, comprising:
measuring a misalignment amount between a third substrate and a fourth substrate, the measuring being performed after the third substrate and the fourth substrate have been stacked on each other;
obtaining a correction amount to correct misalignment to be occurred between the first substrate and the second substrate based on the measured misalignment amount between the third substrate and the fourth substrate; and
forming a structure on each of the first substrate and the second substrate, the structure of the at least one of the first substrate and the second substrate being formed at a position determined based on the obtained correction amount.
25. The substrate processing method according to claim 24 , wherein
the third substrate has the same specification as the first substrate and the fourth substrate has the same specification as the second substrate.
26. A substrate processing system, comprising:
a first apparatus configured to
measure a misalignment amount between a first test substrate and a second test substrate after the first test substrate and the second test substrate have been stacked on each other; and
obtain a correction amount to correct misalignment to be occurred between a first substrate and a second substrate to be stacked on each other based on the measured misalignment amount between the first test substrate and the second test substrate; and
a second apparatus configured to form a structure on at least one of the first substrate and the second substrate at a position determined based on the obtained correction amount.
27. The substrate processing system according to claim 26 , wherein
the first test substrate has the same specification as the first substrate and the second test substrate has the same specification as the second substrate.
28. An exposure method for forming a structure on each of a first substrate and a second substrate to be stacked on each other by exposing the first substrate and the second substrate, comprising:
measuring a misalignment amount between a third substrate and a fourth substrate, the measuring being performed after the third substrate and the fourth substrate have been stacked on each other;
obtaining a correction amount to correct misalignment to be occurred between the first substrate and the second substrate based on the measured misalignment amount between the third substrate and the fourth substrate; and
forming, on at least one of the first substrate and the second substrate, the structure at a position determined based on the obtained correction amount.
29. The exposure method according to claim 28 , wherein
the third substrate has the same specification as the first substrate and the fourth substrate has the same specification as the second substrate.