SiC epitaxial wafer and method for producing same
A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 μm/h or more from an initial growth stage.
1. A SiC epitaxial wafer comprising:
a SiC single crystal substrate of which a main surface has an off-angle of 0.4° to 5° with respect to (0001) plane; and
an epitaxial layer provided on the SiC single crystal substrate,
wherein in the epitaxial layer, a basal plane dislocation density of a basal plane dislocation which continues from the SiC single crystal substrate to an outer surface is 0.1 dislocations/cm 2 or less, and a defect density caused by Si droplets is 0.1 defects/cm 2 or less, and
wherein a total basal plane dislocation density of the basal plane dislocation which continues from the SiC single crystal substrate to the outer surface and a basal plane dislocation which is converted into a threading edge dislocation in the epitaxial layer is 0.1 dislocations/cm 2 or less.
2. The SiC epitaxial wafer according to claim 1 ,
the defect caused by the Si droplets is pits which exist in a scattered manner, and/or a collective defect in which pits are arranged in a direction perpendicular to an off-direction in an in-plane direction of the SiC single crystal substrate.
3. The SiC epitaxial wafer according to claim 2 ,
wherein the defect density caused by Si droplets is zero defects/cm 2 .
4. The SiC epitaxial wafer according to claim 1 ,
wherein a diameter of the SiC single crystal substrate is 150 mm or more.
5. A method for producing a SiC epitaxial wafer in which crystal growth of an epitaxial layer is carried out on a SiC single crystal substrate of which a main surface has an off-angle of 0.4° to 5° with respect to (0001) plane, the method comprising:
an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of the SiC single crystal substrate,
wherein the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 μm/h or more from an initial growth stage.
6. The method for producing a SiC epitaxial wafer according to claim 5 , further comprising:
a cleaning step of cleaning a surface of the SiC single crystal substrate by heating the surface to 1550° C. to 1650° C. in a hydrogen atmosphere under a pressure of 30 torr or less, before the epitaxial growth step.
7. The method for producing a SiC epitaxial wafer according to claim 5 , wherein the gas including the Cl element serves as the Si-based raw material gas.