SiC epitaxial wafer and method for manufacturing same
According to the present invention, there is provided a SiC epitaxial wafer including: a 4H-SiC single crystal substrate which has a surface with an off angle with respect to a c-plane as a main surface and a bevel part on a peripheral part; and a SiC epitaxial layer having a film thickness of 20 μm or more, which is formed on the 4H-SiC single crystal substrate, in which a density of an interface dislocation extending from an outer peripheral edge of the SiC epitaxial layer is 10 lines/cm or less.
1. A SiC epitaxial wafer comprising:
a 4H-SiC single crystal substrate which has
a surface with an off angle with respect to a c-plane as a main surface and
a bevel part on a peripheral part; and
a SiC epitaxial film having a film thickness of 20 μm or more, which is formed on the 4H-SiC single crystal substrate,
wherein a density of an interface dislocation extending from an outer peripheral edge of the SiC epitaxial layer is 10 lines/cm or less.
2. The SiC epitaxial wafer according to claim 1 ,
wherein a density of the interface dislocation in a range of central angles of 25° to 155° and 205° to 335° with a center line in a <11-20> direction is 10 lines/cm or less.
3. The SiC epitaxial wafer according to claim 1 ,
wherein the bevel part includes a slope part continuous from the main surface and an outer peripheral edge part, and
a width of the slope part is 150 μm or more.
4. The SiC epitaxial wafer according to claim 1 ,
wherein the SiC epitaxial film is formed on the main surface and the bevel part of the substrate.
5. The SiC epitaxial wafer according to claim 1 ,
wherein the interface dislocation is a dislocation which starts from an outer peripheral edge of the substrate and extends in a direction, which is perpendicular to a substrate off-cut direction, near an interface between the substrate and the SiC epitaxial film.
6. The SiC epitaxial wafer according to claim 1 ,
wherein the density of the interface dislocation is measured from a photoluminescence (PL) image of the SiC epitaxial wafer.
7. A method for manufacturing the SiC epitaxial wafer according to claim 1 ,
wherein a 4H-SiC single crystal substrate is used,
wherein the 4H-SiC single crystal substrate has a bevel part in a peripheral part,
wherein the bevel part includes
a slope part continuous from the main surface and
an outer peripheral edge part, and
a width of the slope part is 150 μm or more.
8. The method for manufacturing a SiC epitaxial wafer, according to claim 7 , comprising:
a step of preparing the H-SiC single crystal substrate; and
a step of forming a SiC epitaxial film having a film thickness of 20 μm or more on the H-SiC single crystal substrate,
wherein a SiC epitaxial wafer obtained includes
the 4H-SiC single crystal substrate which has the bevel part on a peripheral part and has a surface with an off angle with respect to a c-plane as a main surface; and
the SiC epitaxial film which is formed on the 4H-SiC single crystal substrate and has a film thickness of 20 μm or more, and
a density of an interface dislocation extending from an outer peripheral edge of the SiC epitaxial layer is 10 lines/cm or less.
9. The method for manufacturing a SiC epitaxial wafer according to claim 7 ,
wherein the step of forming the SiC epitaxial film having a film thickness of 20 μm or more includes
a sub-step of determining a thickness of an epitaxial film, satisfying Formula (1), using a width of the slope part of the substrate to be used,
Y= 20 X -400 (1)
(in Formula, Y represents a width (μm) of slope and X represents a thickness (μm) of an epitaxial film), and
a sub-step of forming a SiC epitaxial film so that the thickness of the epitaxial film is set to be equal to or smaller than the determined thickness of the epitaxial film, satisfying Formula (1), which is obtained by the aforementioned formula.