Etching method and etching device

1. A method of selectively etching a silicon nitride film, the method comprising:

a first step of disposing a target substrate having the silicon nitride film formed thereon in a processing space;

a second step of introducing a gas containing H and F into the processing space; and

a third step of selectively etching the silicon nitride film by selectively introducing radicals of an inert gas into the processing space via a partition plate equipped with an ion trap mechanism including at least a first plate-shaped member in which a plurality of first slits are formed and a second plate-shaped member in which a plurality of second slits are formed, the plurality of first slits and the plurality of second slits being arranged not to overlap each other when the partition plate is viewed from the processing space,

wherein an O 2 gas is not introduced into the processing space.

2. The method of claim 1 , wherein the second step and the third step are repeated multiple times while the target substrate is being processed.

3. The method of claim 1 , wherein the gas containing H and F is a HF gas.

4. The method of claim 1 , wherein the processing space is defined by partitioning a processing container using the partition plate equipped with the ion trap mechanism, the processing space is formed below the partition plate, a plasma production space is formed above the partition plate, and the target substrate is disposed in the processing space,

wherein the second step is performed by supplying the gas containing H and F into the processing space, and

wherein the third step is performed by producing a plasma of the inert gas in the plasma production space, and introducing the radicals in the plasma into the processing space while trapping ions in the plasma by the ion trap mechanism.

5. The method of claim 1 , wherein any of an Ar gas, a He gas, a Kr gas, a Ne gas, and a Xe gas is used as the inert gas to form the radicals.

6. The method of claim 1 , wherein the second step and the third step are performed in a state where a temperature of the target substrate falls within a range of −15 to 35 degrees C.

7. The method of claim 1 , wherein the second step is performed at a pressure ranging from 1.33 to 200 Pa.

8. The method of claim 1 , wherein the third step is performed at a pressure ranging from 1.33 to 133 Pa.

9. The method of claim 1 , wherein a heating process is performed one or more times while the second step and the third step are being repeated, and/or after each of the second step and the third step, to remove an etching residue and a reaction product.

10. The method of claim 1 , wherein, in the target substrate, at least one selected from a group consisting of a SiO 2 film, a Si film, a SiGe film, a W film, a TiN film, and a TaN film, coexists with the silicon nitride film, and the silicon nitride film is selectively etched with respect to the coexisting film.

11. The method of claim 1 , further comprising:

a step of purging the processing space after each of the second step and the third step.

12. The method of claim 11 , wherein the step of purging an interior of the processing space is performed by vacuum-exhausting the interior of the processing space.

13. The method of claim 11 , wherein the step of purging an interior of the processing space is performed by introducing the inert gas into the processing space.

14. The method of claim 11 , wherein the step of purging an interior of the processing space is performed by introducing the inert gas into the processing space and vacuum-exhausting an interior of the processing space.

15. An apparatus for selectively etching a silicon nitride film, comprising:

a processing container configured to accommodate a target substrate having the silicon nitride film formed thereon, at least during selective etching of the silicon nitride film;

a partition plate configured to partition the processing container into a plasma production space defined at an upper portion and a processing space defined at a lower portion;

an ion trap mechanism provided in the partition plate and including at least a first plate-shaped member in which a plurality of first slits are formed and a second plate-shaped member in which a plurality of second slits are formed, the ion trap mechanism being configured to trap ions and allow radicals to pass therethrough, the plurality of first slits and the plurality of second slits being arranged not to overlap each other when the partition plate is viewed from the processing space;

a first gas source configured to supply an inert gas to the plasma production space;

a plasma production mechanism configured to produce a plasma of the inert gas in the plasma production space;

a placement stage provided in the processing space to place the target substrate thereon;

a second gas source configured to supply a gas containing H and F into the processing space;

an exhaust mechanism configured to vacuum-exhaust an interior of the processing container; and

a controller configured to perform a control to execute:

a first step of disposing the target substrate having the silicon nitride film formed thereon in the processing space;

a second step of introducing the gas containing H and F into the processing space; and

a third step of selectively etching the silicon nitride film by producing the plasma in the plasma production space and introducing the radicals in the plasma into the processing space via the partition plate while trapping the ions in the plasma by the ion trap mechanism,

wherein an O 2 gas is not introduced into the processing space.

16. The apparatus of claim 15 , wherein the controller performs the control to repeat multiple times, the second step and the third step while the target substrate is being processed.

17. The apparatus of claim 15 , wherein the gas containing the H and F is an HF gas.

18. The apparatus of claim 15 , further comprising:

a heat shield plate provided below the partition plate,

wherein the gas containing H and F is introduced into the processing space through the heat shield plate.

19. A method of selectively etching a silicon nitride film, the method comprising:

a first step of disposing a target substrate having the silicon nitride film formed thereon in a processing space;

a second step of introducing a gas containing H and F from an etching gas source directly into the processing space; and

a third step of selectively introducing radicals of an inert gas generated in a plasma production space into the processing space,

wherein the gas containing H and F is a HF gas,

wherein the second step and the third step are performed in a state where a temperature of the target substrate falls within a range of −15 to 35 degrees C., and

wherein an O 2 gas is not introduced into the processing space.