Plasma processing apparatus and plasma processing method
A plasma processing apparatus, including a processing; a first radio frequency power source; a sample stage on which the sample is placed; a second radio frequency power; and a control device configured to control, when the second radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the second radio frequency power is changed from a value of the second radio frequency power in the first step to a value of the second radio frequency power in the second step, and a supply time of the first gas such that a supply time of the second radio frequency power in the first step is substantially equal to a time of the first step.
1. A plasma processing apparatus, comprising:
a processing chamber in which a sample is subjected to plasma processing;
a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
a sample stage on which the sample is placed;
a second radio frequency power source configured to supply a second radio frequency power to the sample stage; and
a control device configured to control, when the first radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the first radio frequency power is changed from a value of the first radio frequency power in the first step to a value of the first radio frequency power in the second step, a supply time of the first gas by using a first time and a second time such that a supply time of the first radio frequency power in the first step is substantially equal to a time of the first step, wherein
the first step and the second step are steps of plasma processing conditions,
the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.
2. A plasma processing apparatus, comprising:
a processing chamber in which a sample is subjected to plasma processing;
a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
a sample stage on which the sample is placed;
a second radio frequency power source configured to supply a second radio frequency power to the sample stage; and
a control device configured to control, when the second radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the second radio frequency power is changed from a value of the second radio frequency power in the first step to a value of the second radio frequency power in the second step, a supply time of the first gas by using a first time and a second time such that a supply time of the second radio frequency power in the first step is substantially equal to a time of the first step, wherein
the first step and the second step are steps of plasma processing conditions,
the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.
3. The plasma processing apparatus according to claim 1 ,
wherein
the control device controls the supply time of the first gas such that the supply time of the first gas is a time obtained by subtracting a predetermined value from the time of the first step, and
the predetermined value is a value obtained by subtracting the first time from the second time.
4. A plasma processing apparatus, comprising:
a processing chamber in which a sample is subjected to plasma processing;
a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
a sample stage on which the sample is placed;
a second radio frequency power source configured to supply a second radio frequency power to the sample stage; and
a control device configured to control, when the first radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the first radio frequency power is changed from a value of the first radio frequency power in the first step to a value of the first radio frequency power in the second step, a supply time of the second gas by using a first time and a second time such that a supply time of the first radio frequency power in the second step is substantially equal to a time of the second step, wherein
the first step and the second step are steps of plasma processing conditions,
the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.
5. A plasma processing apparatus, comprising:
a processing chamber in which a sample is subjected to plasma processing;
a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
a sample stage on which the sample is placed;
a second radio frequency power source configured to supply a second radio frequency power to the sample stage; and
a control device configured to control, when the second radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the second radio frequency power is changed from a value of the second radio frequency power in the first step to a value of the second radio frequency power in the second step, a supply time of the second gas by using a first time and a second time such that a supply time of the second radio frequency power in the second step is substantially equal to a time of the second step, wherein
the first step and the second step are steps of plasma processing conditions,
the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.
6. The plasma processing apparatus according to claim 4 ,
wherein
the control device controls the supply time of the second gas such that the supply time of the second gas is a time obtained by subtracting a predetermined value from the time of the second step, and
the predetermined value is a value obtained by subtracting the second time from the first time.
7. A plasma processing method in which a plasma processing apparatus is used,
the plasma processing apparatus including:
a processing chamber in which a sample is subjected to plasma processing;
a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
a sample stage on which the sample is placed; and
a second radio frequency power source configured to supply a second radio frequency power to the sample stage,
the plasma processing method comprising:
controlling, when the first radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the first radio frequency power is changed from a value of the first radio frequency power in the first step to a value of the first radio frequency power in the second step, a supply time of the first gas by using a first time and a second time such that a supply time of the first radio frequency power in the first step is substantially equal to a time of the first step, wherein
the first step and the second step are steps of plasma processing conditions,
the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.
8. A plasma processing method in which a plasma processing apparatus is used,
the plasma processing apparatus including:
a processing chamber in which a sample is subjected to plasma processing;
a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
a sample stage on which the sample is placed; and
a second radio frequency power source configured to supply a second radio frequency power to the sample stage,
the plasma processing method comprising:
controlling, when the second radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the second radio frequency power is changed from a value of the second radio frequency power in the first step to a value of the second radio frequency power in the second step, a supply time of the first gas by using a first time and a second time such that a supply time of the second radio frequency power in the first step is substantially equal to a time of the first step, wherein
the first step and the second step are steps of plasma processing conditions,
the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.
9. A plasma processing method in which a plasma processing apparatus is used,
the plasma processing apparatus including:
a processing chamber in which a sample is subjected to plasma processing;
a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
a sample stage on which the sample is placed; and
a second radio frequency power source configured to supply a second radio frequency power to the sample stage,
the plasma processing method comprising:
controlling, when the first radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the first radio frequency power is changed from a value of the first radio frequency power in the first step to a value of the first radio frequency power in the second step, a supply time of the second gas by using a first time and a second time such that a supply time of the first radio frequency power in the second step is substantially equal to a time of the second step, wherein
the first step and the second step are steps of plasma processing conditions,
the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.
10. A plasma processing method in which a plasma processing apparatus is used,
the plasma processing apparatus including:
a processing chamber in which a sample is subjected to plasma processing;
a first radio frequency power source configured to supply a first radio frequency power for generating a plasma;
a sample stage on which the sample is placed; and
a second radio frequency power source configured to supply a second radio frequency power to the sample stage,
the plasma processing method comprising:
controlling, when the second radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the second radio frequency power is changed from a value of the second radio frequency power in the first step to a value of the second radio frequency power in the second step, a supply time of the second gas by using a first time and a second time such that a supply time of the second radio frequency power in the second step is substantially equal to a time of the second step, wherein
the first step and the second step are steps of plasma processing conditions,
the first time is a time period from a start time of the first step to a start time of a supply of the first gas, and
the second time is a time period from a finish time of the first step to a finish time of the supply of the first gas.
11. The plasma processing apparatus according to claim 2 , wherein
the control device controls the supply time of the first gas such that the supply time of the first gas is a time obtained by subtracting a predetermined value from the time of the first step, and
the predetermined value is a value obtained by subtracting the first time from the second time.
12. The plasma processing apparatus according to claim 5 , wherein
the control device controls the supply time of the second gas such that the supply time of the second gas is a time obtained by subtracting a predetermined value from the time of the second step, and
the predetermined value is a value obtained by subtracting the second time from the first time.