SUSCEPTOR, CVD APPARATUS, AND METHOD FOR MANUFACTURING EPITAXIAL WAFER
A susceptor ( 1 ) of the present invention is a susceptor that is configured to hold a wafer in a CVD apparatus that forms a layer on a wafer through chemical vapor deposition, and includes an external susceptor ( 2 ) and an internal susceptor ( 1 ). The external susceptor ( 2 ) has an opening ( 2 c ) that accommodates the internal susceptor ( 1 ) in a coupling manner and has a wafer placement surface ( 2 a ) on which an outer peripheral portion (Ws) of a wafer is placed. The internal susceptor ( 1 ) includes a projection portion ( 1 a ) on a surface ( 1 b ) facing the wafer (W), and a height (h) of the projection portion ( 1 a ) is a height at which the projection portion does not come into contact with the wafer (W) when the wafer (W) is placed on the susceptor.
1 .- 8 . (canceled)
9 . A susceptor comprising:
an external susceptor;
and an internal susceptor,
wherein the external susceptor has an opening that accommodates the internal susceptor in a coupling manner and has a wafer placement surface on which an outer peripheral portion of a wafer is placed,
the internal susceptor includes at least one projection portion on a surface facing the wafer when the wafer is placed on the susceptor, and
a height of the projection portion is a height at which the projection portion does not come into contact with the wafer when the wafer is placed on the susceptor.
10 . The susceptor according to claim 9 , wherein the opening of the external susceptor is surrounded by a step, and the internal susceptor is fitted into the step to block the opening.
11 . The susceptor according to claim 9 , wherein the outer diameter of the internal susceptor is smaller than the outer diameter of the wafer to be placed thereon.
12 . The susceptor according to claim 9 , wherein the internal susceptor includes a plurality of projection portions, and the projection portions are disposed along the circumference of the circle or rotationally symmetrically around a circumference of or rotationally symmetrically on an upper surface of the internal susceptor.
13 . A CVD apparatus comprising:
a furnace which accommodates a wafer and forms a layer on the wafer through chemical vapor deposition;
the susceptor according to claim 9 ; and
a vertical driving mechanism configured to raise and lower the susceptor.
14 . A method of manufacturing an epitaxial wafer in which an SiC single crystal epitaxial layer is formed on an SiC single crystal wafer using the CVD apparatus according to claim 13 , the method comprising:
a wafer transfer step of placing the SiC single crystal wafer on an upper surface of the susceptor using the vertical driving mechanism,
wherein the wafer transfer step is performed at a high temperature of 800° C. or higher.
15 . The susceptor according to claim 9 , wherein the susceptor is constituted by only the external susceptor and the internal susceptor.
16 . The susceptor according to claim 9 , wherein the susceptor is a susceptor that is configured to hold the wafer in a CVD apparatus that forms a layer on the wafer through chemical vapor deposition.
17 . The susceptor according to claim 9 , wherein a height of the projection portion is 0.1 mm to 0.5 mm.
18 . The susceptor according to claim 9 , wherein a difference in height between an upper surface of the projection portion of the internal susceptor and the wafer placement surface of the external susceptor is 1.0 to 4.9 mm.
19 . The susceptor according to claim 9 , wherein the projection portion has an annular configuration being continuous with respect to the center of the internal susceptor, and the projection portion has no cut line.
20 . The susceptor according to claim 9 , wherein the projection portion does not have a notch.
21 . The susceptor according to claim 9 , wherein the internal susceptor includes a plurality of projection portions, and the projection portions are configured to be disposed rotationally and symmetrically with respect to the center and the spaced each other on an upper surface of the internal susceptor.
22 . The method of manufacturing an epitaxial wafer according to claim 14 , wherein a distance between the back surface of the SiC single crystal wafer and the front surface of the susceptor is 1.5 mm to 5.0 mm.
23 . The method of manufacturing an epitaxial wafer according to claim 14 , wherein a distance between the center of the internal susceptor and the projection is 40% to 90% of the SiC single crystal wafer.