PLASMA PROCESSING APPARATUS AND INNER COMPONENT OF PLASMA PROCESSING APPARATUS AND MANUFACTURING METHOD OF INNER COMPONENT OF PLASMA PROCESSING APPARATUS
There is provided a plasma processing apparatus that suppress the contamination of a sample and improves process yield or an inner component of a plasma processing apparatus or a manufacturing method for the inner component. A plasma processing apparatus processes a wafer which is a processing target placed in a processing chamber in an inside of a vacuum chamber using plasma formed from a processing gas supplied to an inside of the processing chamber. A surface of a component that is placed in the inside of the processing chamber and faces the plasma is made of a dielectric material. The dielectric material includes a first material that combines with the supplied processing gas and is volatilized and a second material that combines with the processing gas to produce a non-volatile compound, a volume of the non-volatile compound being increased before the combination.
1 . A plasma processing apparatus that processes a wafer which is a processing target placed in a processing chamber in an inside of a vacuum chamber using plasma formed from a processing gas supplied to an inside of the processing chamber,
wherein: a surface of a component that is placed in the inside of the processing chamber and faces the plasma is made of a dielectric material; and
the dielectric material includes
a first material that combines with the supplied processing gas and is volatilized and
a second material that combines with the processing gas to produce a non-volatile compound, a volume of the non-volatile compound being increased before the combination.
2 . The plasma processing apparatus according to claim 1 ,
wherein the dielectric material includes the first material by an amount corresponding to a volume increased from a volume before the combination of the compound of the second material.
3 . The plasma processing apparatus according to claim 1 ,
wherein: the first material includes Si; and
the second material includes Y.
4 . An inner component of a plasma processing apparatus, the inner component being placed in an inside of a processing chamber of the plasma processing apparatus that processes a wafer that is a processing target placed in the processing chamber in an inside of a vacuum chamber using plasma formed from a processing gas supplied to the inside of the processing chamber,
wherein: a surface of the inner component that faces the plasma is made of a dielectric material; and
the dielectric material includes
a first material that combines with the supplied processing gas and is volatilized and
a second material that combines with the processing gas to produce a non-volatile compound, a volume of the non-volatile compound being increased before the combination.
5 . The inner component of a plasma processing apparatus according to claim 4 ,
wherein the dielectric material includes the first material by an amount corresponding to a volume increased from a volume before the combination of the compound of the second material.
6 . The inner component of a plasma processing apparatus according to claim 4 ,
wherein: the first material includes Si; and
the second material includes Y
7 . A manufacturing method for an inner component that is placed in a processing chamber in an inside of a vacuum chamber of a plasma processing apparatus that processes a wafer that is a processing target using plasma formed from a processing gas supplied to an inside of the processing chamber,
wherein on a surface of the inner component, a dielectric material is formed in advance, the dielectric material including
a first material that combines with the supplied processing gas and is volatilized and
a second material that combines with the processing gas to produce a non-volatile compound, a volume of the non-volatile compound being increased before the combination.
8 . A manufacturing method for an inner component that is placed in a processing chamber in an inside of a vacuum chamber of a plasma processing apparatus that processes a wafer that is a processing target using plasma formed from a processing gas supplied to an inside of the processing chamber,
wherein: on a surface of the inner component, a dielectric material is formed in advance, the dielectric material including
a first material that combines with the supplied processing gas and is volatilized and
a second material that combines with the processing gas to produce a non-volatile compound, a volume of the non-volatile compound being increased before the combination; and
before the wafer is processed, a step of exposing a surface of the inner component to the plasma formed by supplying the processing gas to the inside of the processing chamber for a predetermined time to alter the surface.
9 . The manufacturing method for an inner component of a plasma processing apparatus according to claim 8 ,
wherein the dielectric material includes the first material by an amount corresponding to a volume increased from a volume before the combination of the compound of the second material.