Imaging element, method of manufacturing imaging element, and electronic apparatus
The present technology relates to an imaging element, a method of manufacturing the imaging element, and an electronic apparatus that make it possible to suppress generation of a void in an infrared cutoff filter layer. The imaging element includes: a light receiving sensor that performs photoelectric conversion of incoming light; a cover glass that protects a top surface side serving as a light incidence surface of the light receiving sensor; a frame that is disposed in an outer peripheral portion between the light receiving sensor and the cover glass, and is formed with use of an inorganic material; and an infrared cutoff filter layer that is formed on an inner side on a same plane as the frame. The present technology is applicable to, for example, an imaging element having a CSP structure, and the like.
1. An imaging element comprising:
a light receiving sensor that performs photoelectric conversion of incoming light;
a protective substrate that protects a top surface side serving as a light-incident surface of the light receiving sensor;
a planarizing film covering an entire surface of the light receiving sensor;
a frame that is disposed in an outer peripheral portion between the light receiving sensor and the protective substrate, and is formed with use of an inorganic material; and
an infrared cutoff filter layer that is formed on an inner side on a same plane as the frame, wherein a thickness of the infrared cutoff filter layer and a thickness of the frame are the same.
2. The imaging element according to claim 1 , wherein the frame and the infrared cutoff filter layer that are formed on the same plane are bonded to the planarizing film over an entire opposed region by an adhesive agent, the planarizing film being formed in an uppermost portion of the light receiving sensor.
3. The imaging element according to claim 1 , further comprising a low-reflection film at a predetermined position between the planarizing film and the protective substrate, the planarizing film being formed in an uppermost portion of the light receiving sensor.
4. The imaging element according to claim 3 , wherein the low-reflection film is formed between the frame and the infrared cutoff filter layer that are formed on the same plane and the light receiving sensor.
5. The imaging element according to claim 3 , wherein the low-reflection film is formed between the frame and the infrared cutoff filter layer that are formed on the same plane and the protective substrate.
6. The imaging element according to claim 3 , wherein the low-reflection film is formed between the frame and the light receiving sensor and between the infrared cutoff filter layer and the protective substrate.
7. The imaging element according to claim 3 , wherein the low-reflection film has at least two layers comprising at least a first low-reflection film and a second low-reflection film,
the first low-reflection film is formed between the frame and the infrared cutoff filter layer that are formed on the same plane and the protective substrate, and
the second low-reflection film is formed between the frame and the light receiving sensor and between the infrared cutoff filter layer and the protective substrate.
8. The imaging element according to claim 1 , wherein the frame is formed with use of glass.
9. The imaging element according to claim 1 , wherein the frame is formed with use of silicon.
10. A method of manufacturing an imaging element, the method comprising:
forming a frame at a position of an outer peripheral portion of a light receiving sensor on a protective substrate that protects the light receiving sensor, the frame being formed with use of an inorganic material;
forming a planarizing film that covers an entire surface of the light receiving sensor;
forming an infrared cutoff filter layer on an inner side on a same plane as the frame; and
bonding the frame and the infrared cutoff filter layer that are formed on the same plane to the light receiving sensor by an adhesive agent, wherein a thickness of the infrared cutoff filter layer and a thickness of the frame are the same.
11. The method of manufacturing the imaging element according to claim 10 , wherein the frame is formed by forming a through-hole in a substrate formed with use of the inorganic material, and the substrate in which the frame is formed and the protective substrate are bonded to each other, thereby forming the frame on the protective substrate.
12. The method of manufacturing the imaging element according to claim 10 , wherein the frame is formed on the protective substrate by etching a region in which the infrared cutoff filter layer is formed of a substrate formed with use of the inorganic material to a desired thickness.
13. The method of manufacturing the imaging element according to claim 10 , further comprising forming a low-reflection film at a predetermined position between the planarizing film and the protective substrate, the planarizing film being formed in an uppermost portion of the light receiving sensor.
14. The method of manufacturing the imaging element according to claim 10 , wherein processes until the bonding by the adhesive agent are performed in a wafer state, and thereafter dicing in a chip size is performed.
15. An electronic apparatus provided with an imaging element, the imaging element comprising:
a light receiving sensor that performs photoelectric conversion of incoming light;
a protective substrate that protects a top surface side serving as a light-incident surface of the light receiving sensor;
a planarizing film covering an entire surface of the light receiving sensor;
a frame that is disposed in an outer peripheral portion between the light receiving sensor and the protective substrate, and is formed with use of an inorganic material; and
an infrared cutoff filter layer that is formed on an inner side on a same plane as the frame, wherein a thickness of the infrared cutoff filter layer and a thickness of the frame are the same.