POLISHING LIQUID, POLISHING LIQUID SET, POLISHING METHOD, ANDDEFECT SUPPRESSION METHOD
A polishing liquid containing: abrasive grains containing at least one selected from the group consisting of cerium oxide and silicon oxide; a nitrogen-containing compound; and water, in which the nitrogen-containing compound contains at least one selected from the group consisting of (I) a compound having an aromatic ring containing one nitrogen atom in the ring and a hydroxyl group, (II) a compound having an aromatic ring containing one nitrogen atom in the ring and a functional group containing a nitrogen atom, (III) a compound having a 6-membered ring containing two nitrogen atoms in the ring, (IV) a compound having a benzene ring and a ring containing a nitrogen atom in the ring, and (V) a compound having a benzene ring to which two or more functional groups containing a nitrogen atom are bonded.
1 . A polishing liquid comprising: abrasive grains containing at least one selected from the group consisting of cerium oxide and silicon oxide; a nitrogen-containing compound; and water, wherein
the nitrogen-containing compound contains at least one selected from the group consisting of (I) a compound having an aromatic ring containing one nitrogen atom in the ring and a hydroxyl group, (II) a compound having an aromatic ring containing one nitrogen atom in the ring and a functional group containing a nitrogen atom, (Ill) a compound having a 6-membered ring containing two nitrogen atoms in the ring, (IV) a compound having a benzene ring and a ring containing a nitrogen atom in the ring, and (V) a compound having a benzene ring to which two or more functional groups containing a nitrogen atom are bonded.
2 . The polishing liquid according to claim 1 , wherein the nitrogen-containing compound contains the compound (II).
3 . The polishing liquid according to claim 1 , wherein the nitrogen-containing compound contains the compound (III).
4 . The polishing liquid according to claim 1 , wherein the nitrogen-containing compound contains nicotinamide.
5 . The polishing liquid according to claim 1 , wherein the nitrogen-containing compound contains aminopyridine.
6 . The polishing liquid according to claim 1 , wherein the nitrogen-containing compound contains pyrazinamide.
7 . The polishing liquid according to claim 1 , further comprising a polymer compound (A) having at least one selected from the group consisting of a carboxylic acid group and a carboxylate group.
8 . The polishing liquid according to claim 7 , wherein a content of the polymer compound (A) is 0.001 to 2% by mass.
9 . The polishing liquid according to claim 1 , further comprising a nonionic polymer compound (B).
10 . The polishing liquid according to claim 1 , further comprising a basic compound.
11 . The polishing liquid according to claim 10 , wherein a content of the basic compound is 0.04 mol/kg or less.
12 . The polishing liquid according to claim 1 , wherein the abrasive grains contain cerium oxide.
13 . The polishing liquid according to claim 1 , wherein the abrasive grains contain silicon oxide.
14 . The polishing liquid according to claim 1 , wherein a content of the abrasive grains is 0.01 to 20% by mass.
15 . The polishing liquid according to claim 1 , wherein a pH is 4.0 to 7.5.
16 . The polishing liquid according to claim 1 , wherein a pH is more than 4.0.
17 . A polishing liquid set comprising:
constituent components of the polishing liquid according to claim 1 stored while being divided into a first liquid and a second liquid,
the first liquid containing the abrasive grains and water,
the second liquid containing the nitrogen-containing compound and water.
18 . A polishing method comprising a step of polishing a surface to be polished by using the polishing liquid according to claim 1 .
19 . The polishing method according to claim 18 , wherein the surface to be polished contains at least one selected from the group consisting of polysilicon, amorphous silicon, and single-crystal silicon.
20 . The polishing method according to claim 18 , wherein the surface to be polished contains amorphous silicon.
21 . A defect suppression method suppressing occurrence of defects in polishing of a surface to be polished containing a stopper material, the method comprising:
a step of polishing a surface to be polished by using the polishing liquid according to claim 1 .
22 . The defect suppression method according to claim 21 , wherein the stopper material contains at least one selected from the group consisting of polysilicon, amorphous silicon, and single-crystal silicon.
23 . The defect suppression method according to claim 21 , wherein the stopper material contains amorphous silicon.
24 . A polishing method comprising a step of polishing a surface to be polished by using a polishing liquid obtained by mixing the first liquid and the second liquid of the polishing liquid set according to claim 17 .
25 . The polishing method according to claim 24 , wherein the surface to be polished contains at least one selected from the group consisting of polysilicon, amorphous silicon, and single-crystal silicon.
26 . The polishing method according to claim 24 , wherein the surface to be polished contains amorphous silicon.
27 . A defect suppression method suppressing occurrence of defects in polishing of a surface to be polished containing a stopper material, the method comprising:
a step of polishing a surface to be polished by using a polishing liquid obtained by mixing the first liquid and the second liquid of the polishing liquid set according to claim 17 .
28 . The defect suppression method according to claim 27 , wherein the stopper material contains at least one selected from the group consisting of polysilicon, amorphous silicon, and single-crystal silicon.
29 . The defect suppression method according to claim 27 , wherein the stopper material contains amorphous silicon.